First-principles calculations reveal controlling principles for carrier mobilities in semiconductors
Abstract
It has long been believed that carrier mobilities in semiconductors can be calculated by Fermi s golden rule (Born approximation). Phenomenological models for scattering amplitudes are typically used for engineering- level device modeling. Here we introduce a parameter-free, first-principles approach based on complex- wavevector energy bands that does not invoke the Born approximation. We show that phonon-limited mobility is controlled by low-resistivity percolation paths and that in ionized-impurity scattering one must account for the effect of the screening charge, which cancels most of the Coulomb tail.Finally, calculated electron mobilities in silicon are in agreement with experimental data.
- Authors:
-
- Univ. of Florida, Gainesville, FL (United States)
- Vanderbilt Univ., Nashville, TN (United States)
- (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1350918
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Semiconductor Science and Technology
- Additional Journal Information:
- Journal Volume: 31; Journal Issue: 11; Journal ID: ISSN 0268-1242
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; semiconductors; electron scattering; carrier mobility
Citation Formats
Wu, Yu -Ning, Zhang, Xiaoguang, Pantelides, Sokrates T., and Oak Ridge National Lab. First-principles calculations reveal controlling principles for carrier mobilities in semiconductors. United States: N. p., 2016.
Web. doi:10.1088/0268-1242/31/11/115016.
Wu, Yu -Ning, Zhang, Xiaoguang, Pantelides, Sokrates T., & Oak Ridge National Lab. First-principles calculations reveal controlling principles for carrier mobilities in semiconductors. United States. https://doi.org/10.1088/0268-1242/31/11/115016
Wu, Yu -Ning, Zhang, Xiaoguang, Pantelides, Sokrates T., and Oak Ridge National Lab. Tue .
"First-principles calculations reveal controlling principles for carrier mobilities in semiconductors". United States. https://doi.org/10.1088/0268-1242/31/11/115016. https://www.osti.gov/servlets/purl/1350918.
@article{osti_1350918,
title = {First-principles calculations reveal controlling principles for carrier mobilities in semiconductors},
author = {Wu, Yu -Ning and Zhang, Xiaoguang and Pantelides, Sokrates T. and Oak Ridge National Lab.},
abstractNote = {It has long been believed that carrier mobilities in semiconductors can be calculated by Fermi s golden rule (Born approximation). Phenomenological models for scattering amplitudes are typically used for engineering- level device modeling. Here we introduce a parameter-free, first-principles approach based on complex- wavevector energy bands that does not invoke the Born approximation. We show that phonon-limited mobility is controlled by low-resistivity percolation paths and that in ionized-impurity scattering one must account for the effect of the screening charge, which cancels most of the Coulomb tail.Finally, calculated electron mobilities in silicon are in agreement with experimental data.},
doi = {10.1088/0268-1242/31/11/115016},
journal = {Semiconductor Science and Technology},
number = 11,
volume = 31,
place = {United States},
year = {Tue Oct 11 00:00:00 EDT 2016},
month = {Tue Oct 11 00:00:00 EDT 2016}
}
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Cited by: 11 works
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