MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics
Abstract
Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. But, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. We designed devices with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.
- Authors:
-
- Rutgers Univ., Piscataway, NJ (United States). Dept. of Electrical and Computer Engineering
- Zhejiang Univ., Hangzhou (China). College of Electrical Engineering
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1349569
- Report Number(s):
- BNL-113698-2017-JA
Journal ID: ISSN 2045-2322; KC0403020
- Grant/Contract Number:
- SC00112704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Scientific Reports
- Additional Journal Information:
- Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; electrical and electronic engineering; electronic devices
Citation Formats
Hong, Wen-Chiang, Ku, Chieh-Jen, Li, Rui, Abbaslou, Siamak, Reyes, Pavel, Wang, Szu-Ying, Li, Guangyuan, Lu, Ming, Sheng, Kuang, and Lu, Yicheng. MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics. United States: N. p., 2016.
Web. doi:10.1038/srep34169.
Hong, Wen-Chiang, Ku, Chieh-Jen, Li, Rui, Abbaslou, Siamak, Reyes, Pavel, Wang, Szu-Ying, Li, Guangyuan, Lu, Ming, Sheng, Kuang, & Lu, Yicheng. MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics. United States. https://doi.org/10.1038/srep34169
Hong, Wen-Chiang, Ku, Chieh-Jen, Li, Rui, Abbaslou, Siamak, Reyes, Pavel, Wang, Szu-Ying, Li, Guangyuan, Lu, Ming, Sheng, Kuang, and Lu, Yicheng. Mon .
"MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics". United States. https://doi.org/10.1038/srep34169. https://www.osti.gov/servlets/purl/1349569.
@article{osti_1349569,
title = {MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics},
author = {Hong, Wen-Chiang and Ku, Chieh-Jen and Li, Rui and Abbaslou, Siamak and Reyes, Pavel and Wang, Szu-Ying and Li, Guangyuan and Lu, Ming and Sheng, Kuang and Lu, Yicheng},
abstractNote = {Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. But, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. We designed devices with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.},
doi = {10.1038/srep34169},
journal = {Scientific Reports},
number = 1,
volume = 6,
place = {United States},
year = {Mon Oct 10 00:00:00 EDT 2016},
month = {Mon Oct 10 00:00:00 EDT 2016}
}
Web of Science
Works referenced in this record:
Tracking the Sun V: An Historical Summary of the Installed Price of Photovoltaics in the United States from 1998 to 2011
report, November 2012
- Barbose, Galen; Darghouth, Naim; Wiser, Ryan
Toward integrated PV panels and power electronics using printing technologies
journal, July 2010
- Ababei, Cristinel; Yuvarajan, Subbaraya; Schulz, Douglas L.
- Solar Energy, Vol. 84, Issue 7
High voltage thin film transistors integrated with MEMS
journal, August 2006
- Chow, Eugene M.; Lu, Jeng Ping; Ho, Jackson
- Sensors and Actuators A: Physical, Vol. 130-131
Effects of Mg on the electrical characteristics and thermal stability of MgxZn1−xO thin film transistors
journal, March 2011
- Ku, Chieh-Jen; Duan, Ziqing; Reyes, Pavel I.
- Applied Physics Letters, Vol. 98, Issue 12
Nonsaturating Drain Current Characteristic in Short-Channel Amorphous-Silicon Thin-Film Transistors
journal, April 2010
- Wie, Chu Ryang
- IEEE Transactions on Electron Devices, Vol. 57, Issue 4
Dielectric constants of BeO, MgO, and CaO using the two-terminal method
journal, November 1989
- Subramanian, M. A.; Shannon, R. D.; Chai, B. H. T.
- Physics and Chemistry of Minerals, Vol. 16, Issue 8
Radiation hardness of single-crystalline zinc oxide films
journal, May 2012
- Koike, Kazuto; Aoki, Takahiro; Fujimoto, Ryugo
- physica status solidi (c), Vol. 9, Issue 7
Digital radiology using active matrix readout of amorphous selenium: Radiation hardness of cadmium selenide thin film transistors
journal, April 1998
- Zhao, Wei; Waechter, David; Rowlands, J. A.
- Medical Physics, Vol. 25, Issue 4
Fundamentals of zinc oxide as a semiconductor
journal, October 2009
- Janotti, Anderson; Van de Walle, Chris G.
- Reports on Progress in Physics, Vol. 72, Issue 12
Micro-inverters — Promising solutions in solar photovoltaics
journal, December 2012
- Sher, Hadeed Ahmed; Addoweesh, Khaled E.
- Energy for Sustainable Development, Vol. 16, Issue 4
High-Voltage Organic Thin-Film Transistors on Flexible and Curved Surfaces
journal, December 2015
- Smith, Melissa A.; Gowers, Robert P.; Shih, Andy
- IEEE Transactions on Electron Devices, Vol. 62, Issue 12
High-voltage field effect transistors with wide-bandgap β -Ga 2 O 3 nanomembranes
journal, May 2014
- Hwang, Wan Sik; Verma, Amit; Peelaers, Hartwin
- Applied Physics Letters, Vol. 104, Issue 20
Epitaxial MgO as an alternative gate dielectric for SiC transistor applications
journal, June 2008
- Posadas, A.; Walker, F. J.; Ahn, C. H.
- Applied Physics Letters, Vol. 92, Issue 23
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
journal, November 2004
- Nomura, Kenji; Ohta, Hiromichi; Takagi, Akihiro
- Nature, Vol. 432, Issue 7016, p. 488-492
Photovoltaic electrochromic device for solar cell module and self-powered smart glass applications
journal, April 2012
- Huang, Lee-May; Hu, Chih-Wei; Liu, Han-Chang
- Solar Energy Materials and Solar Cells, Vol. 99
Novel Low-Temperature Polycrystalline-Silicon Power Devices with Very-Low On-Resistance Using Excimer Laser-Crystallization
journal, January 2004
- Cheng, Huang-Chung; Chang, Fang-Long; Lin, Ming-Jang
- Journal of The Electrochemical Society, Vol. 151, Issue 12
High operating voltage application of transparent a-InGaZnO thin-film transistors
journal, January 2013
- Jeong, Jaewook; Lee, Gwang Jun; Kim, Joonwoo
- Semiconductor Science and Technology, Vol. 28, Issue 2
Fundamentals of zinc oxide as a semiconductor
journal, October 2009
- Janotti, Anderson; Van de Walle, Chris G.
- Reports on Progress in Physics, Vol. 72, Issue 12
Novel, 100V, Trench Super Junction high voltage TFTs using low temperature poly crystalline silicon
conference, December 2009
- Dhyani, M. H.; Green, D.; Sweet, M.
- 2009 IEEE International Electron Devices Meeting (IEDM)
High-voltage amorphous silicon thin-film transistors
journal, March 1993
- Martin, R. A.; Da Costa, V. M.; Hack, M.
- IEEE Transactions on Electron Devices, Vol. 40, Issue 3
Effects of Mg composition on open circuit voltage of Cu2O–MgxZn1−xO heterojunction solar cells
journal, January 2012
- Duan, Ziqing; Du Pasquier, Aurelien; Lu, Yicheng
- Solar Energy Materials and Solar Cells, Vol. 96
Nanowire dye-sensitized solar cells
journal, May 2005
- Law, Matt; Greene, Lori E.; Johnson, Justin C.
- Nature Materials, Vol. 4, Issue 6, p. 455-459
Design Optimization of Thin-Film Transistors Based on a Metal–Substrate–Semiconductor Architecture for High DC Voltage Sensing
journal, April 2016
- Udatha, Sambashiva R.; Ruhela, Abhinav; Saravanavel, Ganapathy
- IEEE Transactions on Electron Devices, Vol. 63, Issue 4
Building integrated photovoltaic products: A state-of-the-art review and future research opportunities
journal, May 2012
- Petter Jelle, Bjørn; Breivik, Christer; Drolsum Røkenes, Hilde
- Solar Energy Materials and Solar Cells, Vol. 100
Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing
journal, November 2008
- Nomura, Kenji; Kamiya, Toshio; Ohta, Hiromichi
- Applied Physics Letters, Vol. 93, Issue 19
Improvement of Negative Bias Stress Stability in Mg0.03Zn0.97O Thin-Film Transistors
journal, September 2015
- Ku, Chieh-Jen; Hong, Wen-Chiang; Mohsin, Tanvir
- IEEE Electron Device Letters, Vol. 36, Issue 9
Nanowire dye-sensitized solar cells
journal, May 2005
- Law, Matt; Greene, Lori E.; Johnson, Justin C.
- Nature Materials, Vol. 4, Issue 6, p. 455-459
High-voltage silicon thin film transistor on quartz
journal, June 1982
- Unagami, T.; Tsujiyama, B.
- IEEE Electron Device Letters, Vol. 3, Issue 6
High Voltage, Moderate Current Thin Film Transistor for Actuator Applications
journal, September 2007
- Jamshidi-Roudbari, Abbas; Kuo, Po-Chin; Hatalis, Miltiadis
- ECS Meeting Abstracts, Vol. MA2007-02, Issue 34
High voltage polycrystalline thin-film transistor with variable doping slots in the offset region
journal, March 2002
- Xu, Y. Z.; Cross, R.; Manhas, Meenakshi
- Applied Physics Letters, Vol. 80, Issue 12
High Voltage, Moderate Current Thin Film Transistor for Actuator Applications
journal, September 2007
- Jamshidi-Roudbari, Abbas; Kuo, Po-Chin; Hatalis, Miltiadis
- ECS Transactions, Vol. 11, Issue 14
Device design considerations of a novel high voltage amorphous silicon thin film transistor
conference, January 1987
- Martin, R. A.; Yap, Peng Kein; Hack, M.
- 1987 International Electron Devices Meeting
Amorphous Silicon Thin Film Transistor Array Technology: Applications in Printing and Document Scanning
journal, January 1987
- Weisfield, R. L.; Tuan, H. C.; Fennell, L.
- MRS Proceedings, Vol. 95
Semiconductor Equipment and Materials International
book, August 2014
- Austin, Shannon
- Industrial Communication Technology Handbook, Second Edition
Works referencing / citing this record:
Self-aligned photolithography for the fabrication of fully transparent high-voltage devices
journal, April 2018
- Zhang, Yonghui; Mei, Zengxia; Huo, Wenxing
- Journal of Physics D: Applied Physics, Vol. 51, Issue 17
Yttrium zinc tin oxide high voltage thin film transistors
journal, September 2018
- Marette, Alexis; Shea, Herbert R.; Briand, Danick
- Applied Physics Letters, Vol. 113, Issue 13