Formation of nickel germanides from Ni layers with thickness below 10 nm

Jablonka, Lukas; Kubart, Tomas; Primetzhofer, Daniel; Abedin, Ahmad; Hellström, Per-Erik; Östling, Mikael; Jordan-Sweet, Jean; Lavoie, Christian; Zhang, Shi-Li; Zhang, Zhen

doi:10.1116/1.4975152

Title: Formation of nickel germanides from Ni layers with thickness below 10 nm

Authors:

Jablonka, Lukas; Kubart, Tomas; Primetzhofer, Daniel ^[1]; Abedin, Ahmad; Hellström, Per-Erik; Östling, Mikael; Jordan-Sweet, Jean; Lavoie, Christian; Zhang, Shi-Li; Zhang, Zhen

Department of Physics and Astronomy, Uppsala University, SE-75120 Uppsala, Sweden

Publication Date:: Wed Mar 01 00:00:00 EST 2017

Sponsoring Org.:: USDOE

OSTI Identifier:: 1348865

Grant/Contract Number:: AC02-98CH10886

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology B

Additional Journal Information:: Journal Name: Journal of Vacuum Science and Technology B Journal Volume: 35 Journal Issue: 2; Journal ID: ISSN 2166-2746

Publisher:: American Vacuum Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Jablonka, Lukas, Kubart, Tomas, Primetzhofer, Daniel, Abedin, Ahmad, Hellström, Per-Erik, Östling, Mikael, Jordan-Sweet, Jean, Lavoie, Christian, Zhang, Shi-Li, and Zhang, Zhen. Formation of nickel germanides from Ni layers with thickness below 10 nm.  United States: N. p., 2017. 
Web.  doi:10.1116/1.4975152.

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                    Jablonka, Lukas, Kubart, Tomas, Primetzhofer, Daniel, Abedin, Ahmad, Hellström, Per-Erik, Östling, Mikael, Jordan-Sweet, Jean, Lavoie, Christian, Zhang, Shi-Li, & Zhang, Zhen. Formation of nickel germanides from Ni layers with thickness below 10 nm.  United States.  https://doi.org/10.1116/1.4975152

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                    Jablonka, Lukas, Kubart, Tomas, Primetzhofer, Daniel, Abedin, Ahmad, Hellström, Per-Erik, Östling, Mikael, Jordan-Sweet, Jean, Lavoie, Christian, Zhang, Shi-Li, and Zhang, Zhen. Wed .  
"Formation of nickel germanides from Ni layers with thickness below 10 nm".  United States.  https://doi.org/10.1116/1.4975152.

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@article{osti_1348865,

  title        = {Formation of nickel germanides from Ni layers with thickness below 10 nm},

  author       = {Jablonka, Lukas and Kubart, Tomas and Primetzhofer, Daniel and Abedin, Ahmad and Hellström, Per-Erik and Östling, Mikael and Jordan-Sweet, Jean and Lavoie, Christian and Zhang, Shi-Li and Zhang, Zhen},

  abstractNote = {},

  doi          = {10.1116/1.4975152},

  journal      = {Journal of Vacuum Science and Technology B},

  number       = 2,

  volume       = 35,

  place        = {United States},

  year         = {Wed Mar 01 00:00:00 EST 2017},

  month        = {Wed Mar 01 00:00:00 EST 2017}

}

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Works referenced in this record:

Determination of the dominant diffusing species during nickel and palladium germanide formation
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Comrie, C. M.; Smeets, D.; Pondo, K. J.
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Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate
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Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge
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Formation of NiGe through germanium oxide on Ge(0 0 1) substrate
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Title: Formation of nickel germanides from Ni layers with thickness below 10 nm

Citation Formats

Determination of the dominant diffusing species during nickel and palladium germanide formation journal, December 2012

Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate journal, February 2010

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Reaction of thin Ni films with Ge: Phase formation and texture journal, August 2006

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Nucleation of a new phase from the interaction of two adjacent phases: Some silicides journal, February 1988

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A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate conference, January 2002

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Metal Silicides in CMOS Technology: Past, Present, and Future Trends journal, November 2003

Texture Evolution and Grain Competition in NiGe Film on Ge(001) journal, July 2013

Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films journal, January 2010

Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111) journal, April 2016

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Thin film reaction of transition metals with germanium journal, May 2006

Determination of the dominant diffusing species during nickel and palladium germanide formation
journal, December 2012

Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate
journal, February 2010

Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge
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Reaction of thin Ni films with Ge: Phase formation and texture
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Growth kinetics of planar binary diffusion couples: ’’Thin‐film case’’ versus ’’bulk cases’’
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Epitaxial Growth of Ge Strain Relaxed Buffer on Si with Low Threading Dislocation Density
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Nucleation of a new phase from the interaction of two adjacent phases: Some silicides
journal, February 1988

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A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate
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