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Title: Abnormal Current–Voltage Hysteresis Induced by Reverse Bias in Organic–Inorganic Hybrid Perovskite Photovoltaics

In this study, reverse bias (RB)-induced abnormal hysteresis is investigated in perovskite solar cells (PVSCs) with nickel oxide (NiOx)/methylammonium lead iodide (CH 3NH 3PbI 3) interfaces. Through comprehensive current-voltage (I-V) characterization and bias-dependent external quantum efficiency (EQE) measurements, we demonstrate that this phenomenon is caused by the interfacial ion accumulation intrinsic to CH 3NH 3PbI 3. Subsequently, via systematic analysis we discover that the abnormal I-V behavior is remarkably similar to tunnel diode I-V characteristics and is due to the formation of a transient tunnel junction at NiO x/CH 3NH 3PbI 3 interfaces under RB. The detailed analysis navigating the complexities of I-V behavior in CH 3NH 3PbI 3-based solar cells provided here ultimately illuminates possibilities in modulating ion motion and hysteresis via interfacial engineering in PVSCs. Moreover, this work shows that RB can alter how CH 3NH 3PbI 3 contributes to the functional nature of devices and provides the first steps toward approaching functional perovskite interfaces in new ways for metrology and analysis of complex transient processes.
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  1. Univ. of Washington, Seattle, WA (United States). Dept. of Materials Science and Engineering
Publication Date:
Report Number(s):
Journal ID: ISSN 1948-7185
Grant/Contract Number:
EE0006710; FA2386-15-1-4106; N00014-11-1-0246; DGE-0718124
Accepted Manuscript
Journal Name:
Journal of Physical Chemistry Letters
Additional Journal Information:
Journal Volume: 7; Journal Issue: 6; Journal ID: ISSN 1948-7185
American Chemical Society
Research Org:
Univ. of Washington, Seattle, WA (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); Asian Office of Aerospace R&D; National Science Foundation (NSF)
Contributing Orgs:
The authors acknowledge the support from the Asian Office of Aerospace R&D (FA2386-15-1-4106), the Office of Naval Research (N00014-11-1-0246), and the Department of Energy SunShot (DE-EE0006710). This material is based upon work supported by the National Science Foundation Graduate Research Fellowship Program (DGE-0718124, DGE- 1256082). A.K.-Y.J. thanks the Boeing-Johnson Foundation for their financial support. The characterization facility in Hillhouse Research Group at University of Washington was used for bias-dependent external quantum efficiency measurements. The authors thank Po-Wei Liang for help with AFM measurements.
Country of Publication:
United States
OSTI Identifier: