Abnormal Current–Voltage Hysteresis Induced by Reverse Bias in Organic–Inorganic Hybrid Perovskite Photovoltaics

Rajagopal, Adharsh; Williams, Spencer T.; Chueh, Chu-Chen; Jen, Alex K. -Y.

doi:10.1021/acs.jpclett.6b00058

Title: Abnormal Current–Voltage Hysteresis Induced by Reverse Bias in Organic–Inorganic Hybrid Perovskite Photovoltaics

Journal Article · Mon Feb 29 04:00:00 UTC 2016 · Journal of Physical Chemistry Letters

DOI: https://doi.org/10.1021/acs.jpclett.6b00058 · OSTI ID:1343580

Rajagopal, Adharsh ^[1]; Williams, Spencer T. ^[2]; Chueh, Chu-Chen ^[2]; Jen, Alex K. -Y. ^[2]

Univ. of Washington, Seattle, WA (United States). Dept. of Materials Science and Engineering; University of Washington
Univ. of Washington, Seattle, WA (United States). Dept. of Materials Science and Engineering

In this study, reverse bias (RB)-induced abnormal hysteresis is investigated in perovskite solar cells (PVSCs) with nickel oxide (NiOx)/methylammonium lead iodide (CH₃NH₃PbI₃) interfaces. Through comprehensive current-voltage (I-V) characterization and bias-dependent external quantum efficiency (EQE) measurements, we demonstrate that this phenomenon is caused by the interfacial ion accumulation intrinsic to CH₃NH₃PbI₃. Subsequently, via systematic analysis we discover that the abnormal I-V behavior is remarkably similar to tunnel diode I-V characteristics and is due to the formation of a transient tunnel junction at NiO_x/CH₃NH₃PbI₃ interfaces under RB. The detailed analysis navigating the complexities of I-V behavior in CH₃NH₃PbI₃-based solar cells provided here ultimately illuminates possibilities in modulating ion motion and hysteresis via interfacial engineering in PVSCs. Moreover, this work shows that RB can alter how CH₃NH₃PbI₃ contributes to the functional nature of devices and provides the first steps toward approaching functional perovskite interfaces in new ways for metrology and analysis of complex transient processes.

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Research Organization:: Univ. of Washington, Seattle, WA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); Asian Office of Aerospace R&D; National Science Foundation (NSF)

Contributing Organization:: The authors acknowledge the support from the Asian Office of Aerospace R&D (FA2386-15-1-4106), the Office of Naval Research (N00014-11-1-0246), and the Department of Energy SunShot (DE-EE0006710). This material is based upon work supported by the National Science Foundation Graduate Research Fellowship Program (DGE-0718124, DGE- 1256082). A.K.-Y.J. thanks the Boeing-Johnson Foundation for their financial support. The characterization facility in Hillhouse Research Group at University of Washington was used for bias-dependent external quantum efficiency measurements. The authors thank Po-Wei Liang for help with AFM measurements.

Grant/Contract Number:: EE0006710

OSTI ID:: 1343580

Report Number(s):: DOE-UW-Jen--14

Journal Information:: Journal of Physical Chemistry Letters, Journal Name: Journal of Physical Chemistry Letters Journal Issue: 6 Vol. 7; ISSN 1948-7185

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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