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Title: Diamond heteroepitaxial lateral overgrowth

Abstract

A method of diamond heteroepitaxial lateral overgrowth is demonstrated which utilizes a photolithographic metal mask to pattern a thin (001) epitaxial diamond surface. Significant structural improvement was found, with a threading dislocation density reduced by two orders of magnitude at the top surface of a thick overgrown diamond layer. In the initial stage of overgrowth, a reduction of diamond Raman linewidth in the overgrown area was also realized. Thermally-induced stress and internal stress were determined by Raman spectroscopy of adhering and delaminated diamond films. As a result, the internal stress is found to decrease as sample thickness increases.

Authors:
 [1];  [1];  [1]
  1. Michigan State Univ., East Lansing, MI (United States)
Publication Date:
Research Org.:
Michigan State Univ., East Lansing, MI (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1341422
Grant/Contract Number:  
FG52-08NA28767
Resource Type:
Accepted Manuscript
Journal Name:
MRS Proceedings
Additional Journal Information:
Journal Volume: 1734; Journal ID: ISSN 1946-4274
Publisher:
Materials Research Society (MRS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Tang, Y. -H., Bi, B., and Golding, B. Diamond heteroepitaxial lateral overgrowth. United States: N. p., 2015. Web. doi:10.1557/opl.2015.175.
Tang, Y. -H., Bi, B., & Golding, B. Diamond heteroepitaxial lateral overgrowth. United States. doi:10.1557/opl.2015.175.
Tang, Y. -H., Bi, B., and Golding, B. Tue . "Diamond heteroepitaxial lateral overgrowth". United States. doi:10.1557/opl.2015.175. https://www.osti.gov/servlets/purl/1341422.
@article{osti_1341422,
title = {Diamond heteroepitaxial lateral overgrowth},
author = {Tang, Y. -H. and Bi, B. and Golding, B.},
abstractNote = {A method of diamond heteroepitaxial lateral overgrowth is demonstrated which utilizes a photolithographic metal mask to pattern a thin (001) epitaxial diamond surface. Significant structural improvement was found, with a threading dislocation density reduced by two orders of magnitude at the top surface of a thick overgrown diamond layer. In the initial stage of overgrowth, a reduction of diamond Raman linewidth in the overgrown area was also realized. Thermally-induced stress and internal stress were determined by Raman spectroscopy of adhering and delaminated diamond films. As a result, the internal stress is found to decrease as sample thickness increases.},
doi = {10.1557/opl.2015.175},
journal = {MRS Proceedings},
number = ,
volume = 1734,
place = {United States},
year = {2015},
month = {2}
}

Journal Article:
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