Diamond heteroepitaxial lateral overgrowth

Journal Article · Mon Feb 23 23:00:00 EST 2015 · MRS Proceedings

DOI: https://doi.org/10.1557/opl.2015.175 · OSTI ID:1341422

Tang, Y. -H. ^[1]; Bi, B. ^[2]; Golding, B. ^[2]

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1. Michigan State Univ., East Lansing, MI (United States); Michigan State University
2. Michigan State Univ., East Lansing, MI (United States)

A method of diamond heteroepitaxial lateral overgrowth is demonstrated which utilizes a photolithographic metal mask to pattern a thin (001) epitaxial diamond surface. Significant structural improvement was found, with a threading dislocation density reduced by two orders of magnitude at the top surface of a thick overgrown diamond layer. In the initial stage of overgrowth, a reduction of diamond Raman linewidth in the overgrown area was also realized. Thermally-induced stress and internal stress were determined by Raman spectroscopy of adhering and delaminated diamond films. As a result, the internal stress is found to decrease as sample thickness increases.

• Research Organization: Michigan State Univ., East Lansing, MI (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: FG52-08NA28767
• OSTI ID: 1341422
• Journal Information: MRS Proceedings, Journal Name: MRS Proceedings Vol. 1734; ISSN applab; ISSN 1946-4274
• Publisher: Materials Research Society (MRS)Copyright Statement
• Country of Publication: United States
• Language: English