Nanoscale self-templating for oxide epitaxy with large symmetry mismatch

Gao, Xiang; Lee, Shinbuhm; Nichols, John A.; Meyer, Tricia L.; Ward, Thomas Zac; Chisholm, Matthew F.; Lee, Ho Nyung

doi:10.1038/srep38168

Title: Nanoscale self-templating for oxide epitaxy with large symmetry mismatch

Journal Article · Thu Dec 01 23:00:00 EST 2016 · Scientific Reports

DOI: https://doi.org/10.1038/srep38168 · OSTI ID:1339379

Gao, Xiang ^[1]; Lee, Shinbuhm ^[1]; Nichols, John A. ^[1]; Meyer, Tricia L. ^[1]; Ward, Thomas Zac ^[1]; Chisholm, Matthew F. ^[1]; Lee, Ho Nyung ^[1]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division

Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO₂(B) thin film on a perovskite SrTiO₃ (STO) substrate. For this study, we observe an ultrathin (2–3 unit cells) interlayer best described as highly strained VO₂(B) nanodomains combined with an extra (Ti,V)O₂ layer on the TiO₂ terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO₂(B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despite their large symmetry and lattice mismatch.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1339379

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Electrical Transition in Isostructural VO2 Thin-Film Heterostructures Moatti, Adele; Sachan, Ritesh; Cooper, Valentino R. Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-39529-z	journal	February 2019
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Mott variable range hopping and bad-metal in lightly doped spin-orbit Mott insulator BaIr O 3 Ma, H. J. Harsan; Yang, P.; Lim, Z. S. Physical Review Materials, Vol. 2, Issue 6 https://doi.org/10.1103/physrevmaterials.2.065003	journal	June 2018
Sharp contrast in the electrical and optical properties of vanadium Wadsley ( V m O 2 m + 1 , m > 1 ) epitaxial films selectively stabilized on (111)-oriented Y-stabilized Zr O 2 Choi, Songhee; Son, Jaeseok; Oh, Junhyeob Physical Review Materials, Vol. 3, Issue 6 https://doi.org/10.1103/physrevmaterials.3.063401	journal	June 2019

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