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Title: Evidence for impact ionization in vanadium dioxide

Journal Article · · Physical Review B
 [1];  [2];  [1];  [2];  [3];  [3];  [1];  [1];  [2]
  1. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab); Florida State Univ., Tallahassee, FL (United States). Dept. of Physics
  2. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division

Pump-probe optical spectroscopy was used to investigate charge carrier multiplication via impact ionization in the M1 insulating phase of VO2. By comparing the transient reflectivities of the film when pumped at less than and then more than twice the band-gap energy, we observed an enhancement of the ultrafast response with the higher energy pump color while the film was still transiently in the insulating phase. We additionally identified multiple timescales within the charge dynamics and analyzed how these changed when the pump and probe wavelengths were varied. This experiment provided evidence that impact ionization acts efficiently as a carrier multiplication process in this prototypical strongly-correlated insulator.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1339356
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 15 Vol. 94; ISSN 2469-9950; ISSN PRBMDO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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