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Title: Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

Abstract

The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here in this article, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the process can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. Additionally, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics.

Authors:
 [1];  [1];  [1];  [1];  [2];  [3];  [4];  [1];  [1]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
  2. Univ. of California, Riverside, CA (United States). Bourns College of Engineering, Dept. of Electrical and Computer Engineering, Materials Science and Engineering Program
  3. Univ. of California, Riverside, CA (United States). Bourns College of Engineering, Dept. of Electrical and Computer Engineering, Materials Science and Engineering Program
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1339296
Grant/Contract Number:  
AC02-06CH11357; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Berman, Diana, Deshmukh, Sanket, Narayanan, Badri, Sankaranarayanan, Subramanian K.R.S., Yan, Zhong, Balandin, Alexander A., Zinovev, Alexander, Rosenmann, Daniel, and Sumant, Anirudha V.. Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale. United States: N. p., 2016. Web. https://doi.org/10.1038/ncomms12099.
Berman, Diana, Deshmukh, Sanket, Narayanan, Badri, Sankaranarayanan, Subramanian K.R.S., Yan, Zhong, Balandin, Alexander A., Zinovev, Alexander, Rosenmann, Daniel, & Sumant, Anirudha V.. Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale. United States. https://doi.org/10.1038/ncomms12099
Berman, Diana, Deshmukh, Sanket, Narayanan, Badri, Sankaranarayanan, Subramanian K.R.S., Yan, Zhong, Balandin, Alexander A., Zinovev, Alexander, Rosenmann, Daniel, and Sumant, Anirudha V.. Mon . "Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale". United States. https://doi.org/10.1038/ncomms12099. https://www.osti.gov/servlets/purl/1339296.
@article{osti_1339296,
title = {Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale},
author = {Berman, Diana and Deshmukh, Sanket and Narayanan, Badri and Sankaranarayanan, Subramanian K.R.S. and Yan, Zhong and Balandin, Alexander A. and Zinovev, Alexander and Rosenmann, Daniel and Sumant, Anirudha V.},
abstractNote = {The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here in this article, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the process can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. Additionally, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics.},
doi = {10.1038/ncomms12099},
journal = {Nature Communications},
number = ,
volume = 7,
place = {United States},
year = {2016},
month = {7}
}

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Cited by: 11 works
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