Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

Berman, Diana; Deshmukh, Sanket; Narayanan, Badri; Sankaranarayanan, Subramanian K.R.S.; Yan, Zhong; Balandin, Alexander A.; Zinovev, Alexander; Rosenmann, Daniel; Sumant, Anirudha V.

doi:10.1038/ncomms12099

Title: Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

Journal Article · 04 July 2016 · Nature Communications

DOI: https://doi.org/10.1038/ncomms12099 · OSTI ID:1339296

Berman, Diana ^[1]; Deshmukh, Sanket ^[1]; Narayanan, Badri ^[1]; Sankaranarayanan, Subramanian K.R.S. ^[1]; Yan, Zhong ^[2]; Balandin, Alexander A. ^[3]; Zinovev, Alexander ^[4]; Rosenmann, Daniel ^[1]; Sumant, Anirudha V. ^[1]

Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
Univ. of California, Riverside, CA (United States). Bourns College of Engineering, Dept. of Electrical and Computer Engineering, Materials Science and Engineering Program
Univ. of California, Riverside, CA (United States). Bourns College of Engineering, Dept. of Electrical and Computer Engineering, Materials Science and Engineering Program
Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division

The degradation of intrinsic properties of graphene during the transfer process constitutes a major challenge in graphene device fabrication, stimulating the need for direct growth of graphene on dielectric substrates. Previous attempts of metal-induced transformation of diamond and silicon carbide into graphene suffers from metal contamination and inability to scale graphene growth over large area. Here in this article, we introduce a direct approach to transform polycrystalline diamond into high-quality graphene layers on wafer scale (4 inch in diameter) using a rapid thermal annealing process facilitated by a nickel, Ni thin film catalyst on top. We show that the process can be tuned to grow single or multilayer graphene with good electronic properties. Molecular dynamics simulations elucidate the mechanism of graphene growth on polycrystalline diamond. Additionally, we demonstrate the lateral growth of free-standing graphene over micron-sized pre-fabricated holes, opening exciting opportunities for future graphene/diamond-based electronics.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-06CH11357; AC02-05CH11231

OSTI ID:: 1339296

Journal Information:: Nature Communications, Journal Name: Nature Communications Vol. 7; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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