Thermal transport across high-pressure semiconductor-metal transition in Si and Si0.991Ge0.009

Hohensee, Gregory T.; Fellinger, Michael R.; Trinkle, Dallas R.; Cahill, David G.

doi:10.1103/PhysRevB.91.205104

Title: Thermal transport across high-pressure semiconductor-metal transition in Si and ${Si}_{0.991} {Ge}_{0.009}$

Journal Article · Thu May 07 00:00:00 EDT 2015 · Physical Review. B, Condensed Matter and Materials Physics

DOI: https://doi.org/10.1103/PhysRevB.91.205104 · OSTI ID:1335877

Hohensee, Gregory T. ^[1]; Fellinger, Michael R. ^[2]; Trinkle, Dallas R. ^[2]; Cahill, David G. ^[2]

Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States); Carnegie Institution of Washington
Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)

Time-domain thermoreflectance (TDTR) can be applied to metallic samples at high pressures in the diamond anvil cell (DAC) and provide non-contact measurements of thermal transport properties. We have performed regular and beam-offset TDTR to establish the thermal conductivities of Si and Si_0.991Ge_0.009 across the semiconductor-metal phase transition and up to 45 GPa. The thermal conductivities of metallic Si and Si(Ge) are comparable to aluminum and indicative of predominantly electronic heat carriers. Metallic Si and Si(Ge) have an anisotropy of approximately 1.4, similar to that of beryllium, due to the primitive hexagonal crystal structure. Furthermore, we used the Wiedemann-Franz law to derive the associated electrical resistivity, and found it consistent with the Bloch-Gruneisen model.

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Research Organization:: Carnegie Institution of Washington, Washington, D.C. (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0002006

OSTI ID:: 1335877

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 20 Vol. 91; ISSN 1098-0121; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Thermal transport across high-pressure semiconductor-metal transition in Si and ${Si}_{0.991} {Ge}_{0.009}$