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Title: Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

Semiconductor impurity doping has enabled an entire generation of technology. The emergence of alternative semiconductor material systems, such as transition metal dichalcogenides (TMDCs), requires the development of scalable doping strategies. We report an unprecedented one-pot synthesis for transition-metal substitution in large-area, synthetic monolayer TMDCs. Electron microscopy, optical and electronic transport characterization and ab initio calculations indicate that our doping strategy preserves the attractive qualities of TMDC monolayers, including semiconducting transport and strong direct-gap luminescence. These results are expected to encourage exploration of transition-metal substitution in two-dimensional systems, potentially enabling next-generation optoelectronic technology in the atomically-thin regime.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [1] ;  [1] ;  [5] ;  [4] ;  [6] ;  [6] ;  [2] ;  [7]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering
  2. Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering
  3. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics and Astronomy; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  5. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Mechanical, Aerospace and Nuclear Engineering
  6. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics and Astronomy
  7. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Materials Science and Engineering ; Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Mechanical, Aerospace and Nuclear Engineering
Publication Date:
Grant/Contract Number:
AC05-00OR22725; 1435783; 1510828; 1608171; DMR-1420634
Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 28; Journal Issue: 44; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org:
USDOE Office of Science (SC); National Science Foundation (NSF); US Department of the Navy, Office of Naval Research (ONR)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; band structure; chemical vapor deposition; electronic properties; monolayer transition-metal dichalcogenides; transition-metal doping
OSTI Identifier:
1334421

Gao, Jian, Kim, Young Duck, Liang, Liangbo, Idrobo, Juan Carlos, Chow, Phil, Tan, Jiawei, Li, Baichang, Li, Lu, Sumpter, Bobby G., Lu, Toh-Ming, Meunier, Vincent, Hone, James, and Koratkar, Nikhil. Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors. United States: N. p., Web. doi:10.1002/adma.201601104.
Gao, Jian, Kim, Young Duck, Liang, Liangbo, Idrobo, Juan Carlos, Chow, Phil, Tan, Jiawei, Li, Baichang, Li, Lu, Sumpter, Bobby G., Lu, Toh-Ming, Meunier, Vincent, Hone, James, & Koratkar, Nikhil. Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors. United States. doi:10.1002/adma.201601104.
Gao, Jian, Kim, Young Duck, Liang, Liangbo, Idrobo, Juan Carlos, Chow, Phil, Tan, Jiawei, Li, Baichang, Li, Lu, Sumpter, Bobby G., Lu, Toh-Ming, Meunier, Vincent, Hone, James, and Koratkar, Nikhil. 2016. "Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors". United States. doi:10.1002/adma.201601104. https://www.osti.gov/servlets/purl/1334421.
@article{osti_1334421,
title = {Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors},
author = {Gao, Jian and Kim, Young Duck and Liang, Liangbo and Idrobo, Juan Carlos and Chow, Phil and Tan, Jiawei and Li, Baichang and Li, Lu and Sumpter, Bobby G. and Lu, Toh-Ming and Meunier, Vincent and Hone, James and Koratkar, Nikhil},
abstractNote = {Semiconductor impurity doping has enabled an entire generation of technology. The emergence of alternative semiconductor material systems, such as transition metal dichalcogenides (TMDCs), requires the development of scalable doping strategies. We report an unprecedented one-pot synthesis for transition-metal substitution in large-area, synthetic monolayer TMDCs. Electron microscopy, optical and electronic transport characterization and ab initio calculations indicate that our doping strategy preserves the attractive qualities of TMDC monolayers, including semiconducting transport and strong direct-gap luminescence. These results are expected to encourage exploration of transition-metal substitution in two-dimensional systems, potentially enabling next-generation optoelectronic technology in the atomically-thin regime.},
doi = {10.1002/adma.201601104},
journal = {Advanced Materials},
number = 44,
volume = 28,
place = {United States},
year = {2016},
month = {9}
}

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