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Title: Ferroelectric Self-Poling, Switching, and Monoclinic Domain Configuration in BiFeO 3 Thin Films

Abstract

Self-poling of ferroelectric films, i.e., a preferred, uniform direction of the ferroelectric polarization in as-grown samples is often observed yet poorly understood despite its importance for device applications. The multiferroic perovskite BiFeO3, which crystallizes in two distinct structural polymorphs depending on applied epitaxial strain, is well known to exhibit self-poling. This study investigates the effect of self-poling on the monoclinic domain configuration and the switching properties of the two polymorphs of BiFeO3 (R' and T') in thin films grown on LaAlO3 substrates with slightly different La0.3Sr0.7MnO3 buffer layers. This study shows that the polarization state formed during the growth acts as "imprint" on the polarization and that switching the polarization away from this self-poled direction can only be done at the expense of the sample's monoclinic domain configuration. The observed reduction of the monoclinic domain size is largely reversible; hence, the domain size is restored when the polarization is switched back to its original orientation. This is a direct consequence of the growth taking place in the polar phase (below Tc). Lastly, switching the polarization away from the preferred configuration, in which defects and domain patterns synergistically minimize the system's energy, leads to a domain state with smaller (and moremore » highly strained and distorted) monoclinic domains« less

Authors:
 [1];  [1];  [1];  [2];  [1];  [1];  [2];  [1];  [3];  [3];  [3];  [4]
+ Show Author Affiliations
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1329754
Alternate Identifier(s):
OSTI ID: 1339422
Grant/Contract Number:  
AC05-00OR22725; AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 26; Journal Issue: 28; Journal ID: ISSN 1616-301X
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE

Citation Formats

Beekman, C., Siemons, W., Chi, M., Balke, N., Howe, J. Y., Ward, T. Z., Maksymovych, P., Budai, J. D., Tischler, J. Z., Xu, R., Liu, W., and Christen, H. M. Ferroelectric Self-Poling, Switching, and Monoclinic Domain Configuration in BiFeO 3 Thin Films. United States: N. p., 2016. Web. doi:10.1002/adfm.201600468.
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Beekman, C., Siemons, W., Chi, M., Balke, N., Howe, J. Y., Ward, T. Z., Maksymovych, P., Budai, J. D., Tischler, J. Z., Xu, R., Liu, W., & Christen, H. M. Ferroelectric Self-Poling, Switching, and Monoclinic Domain Configuration in BiFeO 3 Thin Films. United States. https://doi.org/10.1002/adfm.201600468
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Beekman, C., Siemons, W., Chi, M., Balke, N., Howe, J. Y., Ward, T. Z., Maksymovych, P., Budai, J. D., Tischler, J. Z., Xu, R., Liu, W., and Christen, H. M. Mon . "Ferroelectric Self-Poling, Switching, and Monoclinic Domain Configuration in BiFeO 3 Thin Films". United States. https://doi.org/10.1002/adfm.201600468. https://www.osti.gov/servlets/purl/1329754.
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@article{osti_1329754,
title = {Ferroelectric Self-Poling, Switching, and Monoclinic Domain Configuration in BiFeO 3 Thin Films},
author = {Beekman, C. and Siemons, W. and Chi, M. and Balke, N. and Howe, J. Y. and Ward, T. Z. and Maksymovych, P. and Budai, J. D. and Tischler, J. Z. and Xu, R. and Liu, W. and Christen, H. M.},
abstractNote = {Self-poling of ferroelectric films, i.e., a preferred, uniform direction of the ferroelectric polarization in as-grown samples is often observed yet poorly understood despite its importance for device applications. The multiferroic perovskite BiFeO3, which crystallizes in two distinct structural polymorphs depending on applied epitaxial strain, is well known to exhibit self-poling. This study investigates the effect of self-poling on the monoclinic domain configuration and the switching properties of the two polymorphs of BiFeO3 (R' and T') in thin films grown on LaAlO3 substrates with slightly different La0.3Sr0.7MnO3 buffer layers. This study shows that the polarization state formed during the growth acts as "imprint" on the polarization and that switching the polarization away from this self-poled direction can only be done at the expense of the sample's monoclinic domain configuration. The observed reduction of the monoclinic domain size is largely reversible; hence, the domain size is restored when the polarization is switched back to its original orientation. This is a direct consequence of the growth taking place in the polar phase (below Tc). Lastly, switching the polarization away from the preferred configuration, in which defects and domain patterns synergistically minimize the system's energy, leads to a domain state with smaller (and more highly strained and distorted) monoclinic domains},
doi = {10.1002/adfm.201600468},
journal = {Advanced Functional Materials},
number = 28,
volume = 26,
place = {United States},
year = {Mon May 23 00:00:00 EDT 2016},
month = {Mon May 23 00:00:00 EDT 2016}
}
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