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Title: Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te 125 NMR

We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge 50 Te 50, Ag 2 Ge 48Te 50 , and Sb 2 Ge 48 Te 50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T 1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gap of E g/k B ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.
Authors:
 [1] ;  [2] ;  [3] ;  [2]
  1. Ames Lab. and Iowa State Univ., Ames, IA (United States); Iowa State Univ., Ames, IA (United States). Dept. of Chemistry
  2. Ames Lab. and Iowa State Univ., Ames, IA (United States); Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy
  3. Ames Lab. and Iowa State Univ., Ames, IA (United States)
Publication Date:
Report Number(s):
IS-J-9078
Journal ID: ISSN 2469-9950; PRBMDO; TRN: US1700098
Grant/Contract Number:
AC02-07CH11358
Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 94; Journal Issue: 8; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Research Org:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1326845
Alternate Identifier(s):
OSTI ID: 1298343

Cui, J., Levin, E. M., Lee, Y., and Furukawa, Y.. Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te125 NMR. United States: N. p., Web. doi:10.1103/PhysRevB.94.085203.
Cui, J., Levin, E. M., Lee, Y., & Furukawa, Y.. Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te125 NMR. United States. doi:10.1103/PhysRevB.94.085203.
Cui, J., Levin, E. M., Lee, Y., and Furukawa, Y.. 2016. "Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te125 NMR". United States. doi:10.1103/PhysRevB.94.085203. https://www.osti.gov/servlets/purl/1326845.
@article{osti_1326845,
title = {Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te125 NMR},
author = {Cui, J. and Levin, E. M. and Lee, Y. and Furukawa, Y.},
abstractNote = {We have carried out 125Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge50 Te50, Ag2 Ge48Te50 , and Sb2 Ge48 Te50 from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T1), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gap of Eg/kB ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.},
doi = {10.1103/PhysRevB.94.085203},
journal = {Physical Review B},
number = 8,
volume = 94,
place = {United States},
year = {2016},
month = {8}
}

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