DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Revisiting the Al/Al2O3 Interface: Coherent Interfaces and Misfit Accommodation

Abstract

We report the coherent and semi-coherent Al/α-Al2O3 interfaces using molecular dynamics simulations with a mixed, metallic-ionic atomistic model. For the coherent interfaces, both Al-terminated and O-terminated nonstoichiometric interfaces have been studied and their relative stability has been established. To understand the misfit accommodation at the semi-coherent interface, a 1-dimensional (1D) misfit dislocation model and a 2-dimensional (2D) dislocation network model have been studied. For the latter case, our analysis reveals an interface dislocation structure with a network of three sets of parallel dislocations, each with pure-edge character, giving rise to a pattern of coherent and stacking-fault-like regions at the interface. Structural relaxation at elevated temperatures leads to a further change of the dislocation pattern, which can be understood in terms of a competition between the stacking fault energy and the dislocation interaction energy at the interface. In conclusion, our results are expected to serve as an input for the subsequent dislocation dynamics models to understand and predict the macroscopic mechanical behavior of Al/α-Al2O3 composite heterostructures.

Authors:
 [1];  [2];  [1];  [2];  [1];  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Science and Technology Division
  2. Delft Univ. of Technology (Netherlands). Department of Materials Science and Engineering
Publication Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1321737
Report Number(s):
LA-UR-14-20831
Journal ID: ISSN 2045-2322
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 4; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; composites; structural properties; surfaces, interfaces, and thin films; atomistic models

Citation Formats

Pilania, Ghanshyam, Thijsse, Barend J., Hoagland, Richard G., Lazić, Ivan, Valone, Steven M., and Liu, Xiang-Yang. Revisiting the Al/Al2O3 Interface: Coherent Interfaces and Misfit Accommodation. United States: N. p., 2014. Web. doi:10.1038/srep04485.
Pilania, Ghanshyam, Thijsse, Barend J., Hoagland, Richard G., Lazić, Ivan, Valone, Steven M., & Liu, Xiang-Yang. Revisiting the Al/Al2O3 Interface: Coherent Interfaces and Misfit Accommodation. United States. https://doi.org/10.1038/srep04485
Pilania, Ghanshyam, Thijsse, Barend J., Hoagland, Richard G., Lazić, Ivan, Valone, Steven M., and Liu, Xiang-Yang. Thu . "Revisiting the Al/Al2O3 Interface: Coherent Interfaces and Misfit Accommodation". United States. https://doi.org/10.1038/srep04485. https://www.osti.gov/servlets/purl/1321737.
@article{osti_1321737,
title = {Revisiting the Al/Al2O3 Interface: Coherent Interfaces and Misfit Accommodation},
author = {Pilania, Ghanshyam and Thijsse, Barend J. and Hoagland, Richard G. and Lazić, Ivan and Valone, Steven M. and Liu, Xiang-Yang},
abstractNote = {We report the coherent and semi-coherent Al/α-Al2O3 interfaces using molecular dynamics simulations with a mixed, metallic-ionic atomistic model. For the coherent interfaces, both Al-terminated and O-terminated nonstoichiometric interfaces have been studied and their relative stability has been established. To understand the misfit accommodation at the semi-coherent interface, a 1-dimensional (1D) misfit dislocation model and a 2-dimensional (2D) dislocation network model have been studied. For the latter case, our analysis reveals an interface dislocation structure with a network of three sets of parallel dislocations, each with pure-edge character, giving rise to a pattern of coherent and stacking-fault-like regions at the interface. Structural relaxation at elevated temperatures leads to a further change of the dislocation pattern, which can be understood in terms of a competition between the stacking fault energy and the dislocation interaction energy at the interface. In conclusion, our results are expected to serve as an input for the subsequent dislocation dynamics models to understand and predict the macroscopic mechanical behavior of Al/α-Al2O3 composite heterostructures.},
doi = {10.1038/srep04485},
journal = {Scientific Reports},
number = ,
volume = 4,
place = {United States},
year = {Thu Mar 27 00:00:00 EDT 2014},
month = {Thu Mar 27 00:00:00 EDT 2014}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 65 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Wetting and interfacial bonding in ionocovalent oxide-liquid metal systems
journal, January 1988


International Workshop on the Science of Alumina
journal, February 1994


Temperature dependence of the electronic structure of oxides: MgO, MgAl 2 O 4 and Al 2 O 3
journal, April 1990


Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
journal, February 1986

  • Amano, H.; Sawaki, N.; Akasaki, I.
  • Applied Physics Letters, Vol. 48, Issue 5, p. 353-355
  • DOI: 10.1063/1.96549

Energetics of AlN thin films on the Al2O3(0001) surface
journal, August 1998

  • Di Felice, R.; Northrup, J. E.
  • Applied Physics Letters, Vol. 73, Issue 7
  • DOI: 10.1063/1.122044

Oxide surfaces
journal, March 1996

  • Freund, Hans-Joachim; Kuhlenbeck, Helmut; Staemmler, Volker
  • Reports on Progress in Physics, Vol. 59, Issue 3
  • DOI: 10.1088/0034-4885/59/3/001

Wetting and bonding strength in Al/Al2O3 system
journal, February 2002


Interfaces with controlled toughness as mechanical fuses to isolate fibres from damage
journal, June 1989

  • Gupta, V.; Argon, A. S.; Cornie, J. A.
  • Journal of Materials Science, Vol. 24, Issue 6
  • DOI: 10.1007/BF02385418

Interaction of nanostructured metal overlayers with oxide surfaces
journal, November 2007


Development of Al/Al 2 O 3 -Coated Wire-Mesh Honeycombs for Catalytic Combustion of Volatile Organic Compounds in Air
journal, February 2004

  • Yang, Kyung Shik; Choi, Jin Seong; Lee, Soo Hyun
  • Industrial & Engineering Chemistry Research, Vol. 43, Issue 4
  • DOI: 10.1021/ie034022g

Wetting of aluminium oxide by molten aluminium and other metals
journal, January 1969

  • Champion, J. A.; Keene, B. J.; Sillwood, J. M.
  • Journal of Materials Science, Vol. 4, Issue 1
  • DOI: 10.1007/BF00555046

The interface formation as studied by electron spectroscopies
journal, September 1990


The aluminium/sapphire interface formation at high temperature: an AES and LEED study
journal, January 1995


Wetting kinetics of liquid aluminium on an Al2O3 surface
journal, July 1995

  • Zhou, X. B.; De Hosson, J. Th. M.
  • Journal of Materials Science, Vol. 30, Issue 14
  • DOI: 10.1007/BF00351867

Orientation relationships in heteroepitaxial aluminum films on sapphire
journal, May 1997


Oxygen induced interfacial phenomena during wetting of alumina by liquid aluminium
journal, January 2002


The influence of surface structure on wetting of α-Al2O3 by aluminum in a reduced atmosphere
journal, September 2003


Wetting and interfacial chemistry of metallic films on the hydroxylated α Al 2 O 3 ( 0001 ) surface
journal, January 2005


Hydroxylated α-Al2O3 (0001) surfaces and metal/α-Al2O3 (0001) interfaces
journal, November 2006


An investigation on the wetting of polycrystalline alumina by aluminium
journal, February 2008


Dopant Effect of Yttrium and the Growth and Adherence of Alumina on Nickel‐Aluminum Alloys
journal, July 1985

  • Anderson, Alfred B.; Mehandru, S. P.; Smialek, J. L.
  • Journal of The Electrochemical Society, Vol. 132, Issue 7
  • DOI: 10.1149/1.2114193

Nonstoichiometric Interfaces and Al 2 O 3 Adhesion with Al and Ag
journal, October 2000


In-plane relaxation of Cu(111) and Al ( 111 ) / α Al 2 O 3 (0001) interfaces
journal, June 2001


Fundamental Influence of C on Adhesion of the A l 2 O 3 / A l Interface
journal, December 2002


Adhesion, atomic structure, and bonding at the Al ( 111 ) / α Al 2 O 3 ( 0001 ) interface: A first principles study
journal, February 2002


Ab initio study of Al-ceramic interfacial adhesion
journal, March 2003


Adhesion and nonwetting-wetting transition in the Al / α Al 2 O 3 interface
journal, January 2004


Atomically Abrupt Liquid-Oxide Interface Stabilized by Self-Regulated Interfacial Defects: The Case of Al / Al 2 O 3 Interfaces
journal, May 2012


Electrostatic potentials for metal-oxide surfaces and interfaces
journal, October 1994


Metal/oxide interfaces: an electrostatics-based model
journal, January 1994


Energetics and atomic transport at liquid metal/Al2O3 interfaces
journal, November 1999


Wetting and adhesion of Ni-Al alloys on α-Al2O3 single crystals
journal, July 1995

  • Merlin, V.; Eustathopoulos, N.
  • Journal of Materials Science, Vol. 30, Issue 14
  • DOI: 10.1007/BF00351875

Mechanisms controlling the durability of thermal barrier coatings
journal, January 2001


Oscillatory Mass Transport in Vapor-Liquid-Solid Growth of Sapphire Nanowires
journal, October 2010


Energetics of aluminum vacancies in gamma alumina
journal, July 1999


ReaxFF:  A Reactive Force Field for Hydrocarbons
journal, October 2001

  • van Duin, Adri C. T.; Dasgupta, Siddharth; Lorant, Francois
  • The Journal of Physical Chemistry A, Vol. 105, Issue 41
  • DOI: 10.1021/jp004368u

The mechanical properties of laminated microscale composites of Al/Al2O3
journal, March 1990

  • Alpas, A. T.; Embury, J. D.; Hardwick, D. A.
  • Journal of Materials Science, Vol. 25, Issue 3
  • DOI: 10.1007/BF01045357

Applications of Modern Density Functional Theory to Surfaces and Interfaces
book, January 2012

  • Pilania, G.; Zhu, H.; Ramprasad, R.
  • A Matter of Density: Exploring the Electron Density Concept in the Chemical, Biological, and Materials Sciences
  • DOI: 10.1002/9781118431740.ch11

Explicit incorporation of cross-slip in a dislocation density-based crystal plasticity model
journal, August 2012


Plasticity of Micrometer-Scale Single Crystals in Compression
journal, August 2009


Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Interface defects, reference spaces and the Frank–Bilby equation
journal, June 2013


Atomistic modeling of the interaction of glide dislocations with “weak” interfaces
journal, November 2008


Martensite
journal, January 1953


Spiral Patterns of Dislocations at Nodes in (111) Semi-coherent FCC Interfaces
journal, August 2013

  • Shao, Shuai; Wang, Jian; Misra, Amit
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02448

Metal-oxide interfaces
journal, April 1995


An improved molecular dynamics potential for the Al–O system
journal, February 2012


Modified charge transfer–embedded atom method potential for metal/metal oxide systems
journal, January 2004


Inhomogeneous Electron Gas
journal, November 1964


Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Projector augmented-wave method
journal, December 1994


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Special points for Brillouin-zone integrations
journal, June 1976

  • Monkhorst, Hendrik J.; Pack, James D.
  • Physical Review B, Vol. 13, Issue 12, p. 5188-5192
  • DOI: 10.1103/PhysRevB.13.5188

Thermal Properties of the Inhomogeneous Electron Gas
journal, March 1965


Forces in Molecules
journal, August 1939


Spiral Patterns of Dislocations at Nodes in (111) Semi-coherent FCC Interfaces
journal, August 2013

  • Shao, Shuai; Wang, Jian; Misra, Amit
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02448

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
journal, February 1986

  • Amano, H.; Sawaki, N.; Akasaki, I.
  • Applied Physics Letters, Vol. 48, Issue 5, p. 353-355
  • DOI: 10.1063/1.96549

Works referencing / citing this record:

Adsorption of Hydrogen Sulfide, Hydrosulfide and Sulfide at Cu(110) - Polarizability and Cooperativity Effects. First Stages of Formation of a Sulfide Layer.
journal, June 2018

  • Lousada, Cláudio M.; Johansson, Adam Johannes; Korzhavyi, Pavel A.
  • ChemPhysChem, Vol. 19, Issue 17
  • DOI: 10.1002/cphc.201800246

Strength of ceramic–metal joints measured in planar impact experiments
journal, February 2018


Effect of SiC nanoparticles on the precipitation behavior and mechanical properties of 7075Al alloy
journal, February 2020


Structural modifications due to interface chemistry at metal-nitride interfaces
journal, November 2015

  • Yadav, S. K.; Shao, S.; Wang, J.
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep17380

High-temperature thermoelectric transport behavior of the Al/γ-Al 2 O 3 interface: impact of electron and phonon scattering at nanoscale metal–ceramic contacts
journal, January 2018

  • Samanta, Pabitra Narayan; Leszczynski, Jerzy
  • Physical Chemistry Chemical Physics, Vol. 20, Issue 21
  • DOI: 10.1039/c8cp01374h

Dislocations penetrating an Al/Si interface
journal, December 2017

  • Zhang, Zhibo; Urbassek, Herbert M.
  • AIP Advances, Vol. 7, Issue 12
  • DOI: 10.1063/1.5008886

Semicoherent oxide heterointerfaces: Structure, properties, and implications
journal, October 2019

  • Uberuaga, Blas Pedro; Dholabhai, Pratik P.; Pilania, Ghanshyam
  • APL Materials, Vol. 7, Issue 10
  • DOI: 10.1063/1.5121027

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices
journal, January 2019

  • Jenkins, Melanie; Austin, Dustin Z.; Conley, John F.
  • ECS Journal of Solid State Science and Technology, Vol. 8, Issue 11
  • DOI: 10.1149/2.0161910jss

Thermal Boundary Characteristics of Homo-/Heterogeneous Interfaces
journal, April 2019

  • Heijmans, Koen; Pathak, Amar Deep; Solano-López, Pablo
  • Nanomaterials, Vol. 9, Issue 5
  • DOI: 10.3390/nano9050663

Hydrogen bonds in Al2O3 as dissipative two-level systems in superconducting qubits
journal, December 2014

  • Gordon, Luke; Abu-Farsakh, Hazem; Janotti, Anderson
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep07590