Air-stable solution-processed n-channel organic thin film transistors with polymerenhanced morphology

He, Zhengran; Shaik, Shoieb; Bi, Sheng; Chen, Jihua; Li, Dawen

doi:10.1063/1.4919677

Title: Air-stable solution-processed n-channel organic thin film transistors with polymerenhanced morphology

Journal Article · Mon May 04 00:00:00 EDT 2015 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.4919677 · OSTI ID:1286903

He, Zhengran ^[1]; Shaik, Shoieb ^[1]; Bi, Sheng ^[1]; Chen, Jihua ^[2]; Li, Dawen ^[1]

Univ. of Alabama, Tuscaloosa, AL (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

N,N⁰-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN₂) is an n-type semiconductor exhibiting high electron mobility and excellent air stability. However, the reported electron mobility based on spin-coated PDIF-CN₂ film is much lower than the value of PDIF-CN₂ single crystals made from vapor phase deposition, indicating significant room for mobility enhancement. In this study, various insulating polymers, including poly(vinyl alcohol), poly(methyl methacrylate) (PMMA), and poly(alpha-methylstyrene) (PaMS), are pre-coated on silicon substrate aiming to enhance the morphology of the PDIF-CN₂ thin film, thereby improving the charge transport and air stability. Atomic force microscopy images reveal that with the pre-deposition of PaMS or PMMA polymers, the morphology of the PDIF-CN₂ polycrystalline films is optimized in semiconducting crystal connectivity, domain size, and surface roughness, which leads to significant improvement of organic thin-film transistor (OTFT) performance. Particularly, an electron mobility of up to 0.55 cm²/V s has been achieved from OTFTs based on the PDIF-CN₂ film with the pre-deposition of PaMS polymer.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1286903

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 106; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Phase segregation effect on TIPS pentacene crystallization and morphology for organic thin film transistors He, Zhengran; Bi, Sheng; Asare-Yeboah, Kyeiwaa Journal of Materials Science: Materials in Electronics, Vol. 31, Issue 6 https://doi.org/10.1007/s10854-020-02999-3	journal	February 2020
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Nanoscale alignment of semiconductor crystals for high-fidelity organic electronics applications He, Zhengran; Zhang, Ziyang; Bi, Sheng Applied Nanoscience https://doi.org/10.1007/s13204-019-01068-4	journal	May 2019
Polymer additive controlled morphology for high performance organic thin film transistors He, Zhengran; Chen, Jihua; Li, Dawen Soft Matter, Vol. 15, Issue 29 https://doi.org/10.1039/c9sm01053j	journal	January 2019
A N–H functionalized perylene diimide with strong red-light absorption for green solvent processed organic electronics Harris, Dylan H.; Brixi, Samantha; Gelfand, Benjamin S. Journal of Materials Chemistry C, Vol. 8, Issue 29 https://doi.org/10.1039/d0tc02284e	journal	January 2020
Solution-grown small-molecule organic semiconductor with enhanced crystal alignment and areal coverage for organic thin film transistors Bi, Sheng; He, Zhengran; Chen, Jihua AIP Advances, Vol. 5, Issue 7 https://doi.org/10.1063/1.4927577	journal	July 2015
Nanoparticles for organic electronics applications He, Zhengran; Zhang, Ziyang; Bi, Sheng Materials Research Express, Vol. 7, Issue 1 https://doi.org/10.1088/2053-1591/ab636f	journal	January 2020

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