3D Band Diagram and Photoexcitation of 2D–3D Semiconductor Heterojunctions

Li, Bo; Shi, Gang; Lei, Sidong; He, Yongmin; Gao, Weilu; Gong, Yongji; Ye, Gonglan; Zhou, Wu; Keyshar, Kunttal; Hao, Ji; Dong, Pei; Ge, Liehui; Lou, Jun; Kono, Junichiro; Vajtai, Robert; Ajayan, Pulickel M.

doi:10.1021/acs.nanolett.5b02012

Title: 3D Band Diagram and Photoexcitation of 2D–3D Semiconductor Heterojunctions

Journal Article · Mon Aug 17 00:00:00 UTC 2015 · Nano Letters

DOI: https://doi.org/10.1021/acs.nanolett.5b02012 · OSTI ID:1265614

Li, Bo ^[1]; Shi, Gang ^[1]; Lei, Sidong ^[1]; He, Yongmin ^[2]; Gao, Weilu ^[3]; Gong, Yongji ^[4]; Ye, Gonglan ^[1]; Zhou, Wu ^[5]; Keyshar, Kunttal ^[1]; Hao, Ji ^[6]; Dong, Pei ^[1]; Ge, Liehui ^[1]; Lou, Jun ^[1]; Kono, Junichiro ^[7]; Vajtai, Robert ^[1]; Ajayan, Pulickel M. ^[1]

Rice Univ., Houston, TX (United States). Dept. of Materials Science and NanoEngineering
Rice Univ., Houston, TX (United States). Dept. of Materials Science and NanoEngineering; Lanzhou Univ. (China). School of Physical Science and Technology
Rice Univ., Houston, TX (United States). Dept. of Electrical and Computer Engineering; Rice Univ., Houston, TX (United States). Dept. of Physics and Astronomy
Rice Univ., Houston, TX (United States). Dept. of Chemistry
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Northeastern Univ., Boston, MA (United States). Dept. of Mechanical and Industrial Engineering
Rice Univ., Houston, TX (United States). Dept. of Materials Science and NanoEngineering; Rice Univ., Houston, TX (United States). Dept. of Electrical and Computer Engineering; Rice Univ., Houston, TX (United States). Dept. of Physics and Astronomy

The emergence of a rich variety of two-dimensional (2D) layered semiconductor materials has enabled the creation of atomically thin heterojunction devices. Junctions between atomically thin 2D layers and 3D bulk semiconductors can lead to junctions that are fundamentally electronically different from the covalently bonded conventional semiconductor junctions. In this paper, we propose a new 3D band diagram for the heterojunction formed between n-type monolayer MoS₂ and p-type Si, in which the conduction and valence band-edges of the MoS₂ monolayer are drawn for both stacked and in-plane directions. This new band diagram helps visualize the flow of charge carriers inside the device in a 3D manner. Our detailed wavelength-dependent photocurrent measurements fully support the diagrams and unambiguously show that the band alignment is type I for this 2D-3D heterojunction. Photogenerated electron–hole pairs in the atomically thin monolayer are separated and driven by an external bias and control the “on/off” states of the junction photodetector device. Finally, two photoresponse regimes with fast and slow relaxation are also revealed in time-resolved photocurrent measurements, suggesting the important role played by charge trap states.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: Air Force Office of Scientific Research (AFOSR) (United States); US Department of Defense; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1265614

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 9 Vol. 15; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene Xie, Chao; Mak, Chunhin; Tao, Xiaoming Advanced Functional Materials, Vol. 27, Issue 19 https://doi.org/10.1002/adfm.201603886	journal	November 2016
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Direct van der Waals epitaxial growth of 1D/2D Sb2Se3/WS2 mixed-dimensional p-n heterojunctions Sun, Guangzhuang; Li, Bo; Li, Jia Nano Research, Vol. 12, Issue 5 https://doi.org/10.1007/s12274-019-2364-1	journal	March 2019
Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties Moun, Monika; Kumar, Mukesh; Garg, Manjari Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-30237-8	journal	August 2018
Engineering graphene and TMDs based van der Waals heterostructures for photovoltaic and photoelectrochemical solar energy conversion Li, Changli; Cao, Qi; Wang, Faze Chemical Society Reviews, Vol. 47, Issue 13 https://doi.org/10.1039/c8cs00067k	journal	January 2018
Monolayer MoSe ₂ /NiO van der Waals heterostructures for infrared light-emitting diodes Wang, Caiyun; Kang, Zhe; Zheng, Zhi Journal of Materials Chemistry C, Vol. 7, Issue 43 https://doi.org/10.1039/c9tc04481g	journal	January 2019
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