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Title: Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy

Abstract

The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. Nonetheless, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable effects are strongly suppressed in suspended devices. Extremely robust (photogain > 1,000) and fast (response time < 1 ms) photoresponse allow us to study, for the first time, the formation, binding energies, and dissociation mechanisms of excitons in TMDCs through photocurrent spectroscopy. By analyzing the spectral positions of peaks in the photocurrent and by comparing them with first-principles calculations, we obtain binding energies, band gaps and spin-orbit splitting in monolayer TMDCs. For monolayer MoS2, in particular, we obtain an extremely large binding energy for band-edge excitons, Ebind ≥ 570 meV. Along with band-edge excitons, we observe excitons associated with a van Hove singularity of rather unique nature. In conclusion, the analysis of the source-drain voltage dependence of photocurrent spectra reveals exciton dissociation and photoconversion mechanisms in TMDCs.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [1];  [3];  [4];  [1];  [5];  [6];  [3];  [1];  [2];  [1]
  1. Vanderbilt Univ., Nashville, TN (United States)
  2. Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
  5. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  6. Fisk Univ., Nashville, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1259492
Alternate Identifier(s):
OSTI ID: 1265274
Grant/Contract Number:  
FGO2-99ER45781; W911NF-07-R-0003-02; NSF ARI-R2 DMR-0963361; NSF EPS1004083; ONR- N000141310299; NSF CAREER DMR-1056859; HDTRA1-10-0047; AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 4; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Electronic properties and materials; Nanoscience and technology; Nanosensors; Two-dimensional materials

Citation Formats

Klots, A. R., Newaz, A. K. M., Wang, Bin, Prasai, D., Krzyzanowska, H., Lin, Junhao, Caudel, D., Ghimire, N. J., Yan, J., Ivanov, B. L., Velizhanin, K. A., Burger, A., Mandrus, D. G., Tolk, N. H., Pantelides, S. T., and Bolotin, K. I. Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy. United States: N. p., 2014. Web. doi:10.1038/srep06608.
Klots, A. R., Newaz, A. K. M., Wang, Bin, Prasai, D., Krzyzanowska, H., Lin, Junhao, Caudel, D., Ghimire, N. J., Yan, J., Ivanov, B. L., Velizhanin, K. A., Burger, A., Mandrus, D. G., Tolk, N. H., Pantelides, S. T., & Bolotin, K. I. Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy. United States. https://doi.org/10.1038/srep06608
Klots, A. R., Newaz, A. K. M., Wang, Bin, Prasai, D., Krzyzanowska, H., Lin, Junhao, Caudel, D., Ghimire, N. J., Yan, J., Ivanov, B. L., Velizhanin, K. A., Burger, A., Mandrus, D. G., Tolk, N. H., Pantelides, S. T., and Bolotin, K. I. Thu . "Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy". United States. https://doi.org/10.1038/srep06608. https://www.osti.gov/servlets/purl/1259492.
@article{osti_1259492,
title = {Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy},
author = {Klots, A. R. and Newaz, A. K. M. and Wang, Bin and Prasai, D. and Krzyzanowska, H. and Lin, Junhao and Caudel, D. and Ghimire, N. J. and Yan, J. and Ivanov, B. L. and Velizhanin, K. A. and Burger, A. and Mandrus, D. G. and Tolk, N. H. and Pantelides, S. T. and Bolotin, K. I.},
abstractNote = {The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. Nonetheless, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable effects are strongly suppressed in suspended devices. Extremely robust (photogain > 1,000) and fast (response time < 1 ms) photoresponse allow us to study, for the first time, the formation, binding energies, and dissociation mechanisms of excitons in TMDCs through photocurrent spectroscopy. By analyzing the spectral positions of peaks in the photocurrent and by comparing them with first-principles calculations, we obtain binding energies, band gaps and spin-orbit splitting in monolayer TMDCs. For monolayer MoS2, in particular, we obtain an extremely large binding energy for band-edge excitons, Ebind ≥ 570 meV. Along with band-edge excitons, we observe excitons associated with a van Hove singularity of rather unique nature. In conclusion, the analysis of the source-drain voltage dependence of photocurrent spectra reveals exciton dissociation and photoconversion mechanisms in TMDCs.},
doi = {10.1038/srep06608},
journal = {Scientific Reports},
number = ,
volume = 4,
place = {United States},
year = {Thu Oct 16 00:00:00 EDT 2014},
month = {Thu Oct 16 00:00:00 EDT 2014}
}

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Study on photoelectric characteristics of monolayer WS 2 films
journal, January 2019

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Polarization and time-resolved photoluminescence spectroscopy of excitons in MoSe 2 monolayers
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DFT study of structural and electronic properties of MoS 2(1−x) Se 2x alloy (x = 0.25)
journal, April 2018

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Large-area MoS 2 -MoO x heterojunction thin-film photodetectors with wide spectral range and enhanced photoresponse
journal, June 2019

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Impact of substrate induced band tail states on the electronic and optical properties of MoS 2
journal, December 2019

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Electrical control of spatial resolution in mixed-dimensional heterostructured photodetectors
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Highly sensitive visible to infrared MoTe 2 photodetectors enhanced by the photogating effect
journal, September 2016


Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials
journal, January 2017

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Optical absorption by indirect excitons in a transition metal dichalcogenide/hexagonal boron nitride heterostructure
journal, May 2018

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Two-dimensional excitons in monolayer transition metal dichalcogenides from radial equation and variational calculations
journal, January 2019


k · p theory for two-dimensional transition metal dichalcogenide semiconductors
journal, April 2015


Exciton states in monolayer MoSe 2 : impact on interband transitions
journal, November 2015


Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides
journal, January 2017


Ultrasensitive tunability of the direct bandgap of 2D InSe flakes via strain engineering
journal, January 2018


The Computational 2D Materials Database: high-throughput modeling and discovery of atomically thin crystals
journal, September 2018


Roadmap on finding chiral valleys: screening 2D materials for valleytronics
journal, June 2018


Exciton broadening in WS 2 /graphene heterostructures
journal, November 2017


Optical nonlinearities of excitons in monolayer MoS 2
journal, April 2018


Dependence of Raman and absorption spectra of stacked bilayer MoS_2 on the stacking orientation
journal, January 2016


Localized plasmonic fields of nanoantennas enhance second harmonic generation from two-dimensional molybdenum disulfide
journal, July 2018

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Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2
journal, September 2018

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Direct Observation of Monolayer MoS2 Prepared by CVD Using In-Situ Differential Reflectance Spectroscopy
journal, November 2019


Fast and Highly Sensitive Ionic-Polymer-Gated WS 2 -Graphene Photodetectors
journal, April 2017

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Many-Body Complexes in 2D Semiconductors
journal, August 2018


Observation of Novel Multifunctionalities in Monolayer CdO
journal, September 2018


Electrically tunable organic–inorganic hybrid polaritons with monolayer WS2
journal, January 2017

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Dichroic spin–valley photocurrent in monolayer molybdenum disulphide
journal, July 2015

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Band structure characterization of WS2 grown by chemical vapor deposition
journal, June 2016

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Direct and indirect optical transitions in bulk and atomically thin MoS 2 studied by photoreflectance and photoacoustic spectroscopy
journal, April 2019

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Investigation on nonlinear optical properties of MoS 2 nanoflakes grown on silicon and quartz substrates
journal, April 2018

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Calculating excitons, plasmons, and quasiparticles in 2D materials and van der Waals heterostructures
journal, June 2017


Band structure engineering in van der Waals heterostructures via dielectric screening: the GΔW method
journal, March 2017


Semiconductor channel-mediated photodoping in h-BN encapsulated monolayer MoSe 2 phototransistors
journal, March 2019


Growth of MoS 2 nanoflakes near/far from tubular furnace axis and their impact on the efficiency enhancement of the Si solar cells
journal, May 2019

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Large-Area Growth of Uniform Single-Layer MoS2 Thin Films by Chemical Vapor Deposition
journal, October 2015


Effect of Doping on Hydrogen Evolution Reaction of Vanadium Disulfide Monolayer
journal, December 2015


Schottky-barrier modulation at germanium/monolayer MoS 2 heterojunction interface: the roles of passivation and interfacial layer
journal, February 2020


Exciton broadening in WS2 /graphene heterostructures
text, January 2017

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Effect of Processing Parameters on Monolayer MoS2 Prepared by APCVD in a Quasiclosed Crucible
journal, May 2019


Trion fine structure and coupled spin–valley dynamics in monolayer tungsten disulfide
journal, September 2016

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Strong interlayer hybridization in the aligned SnS2/WSe2 hetero-bilayer structure
journal, July 2019

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Transport properties of unrestricted carriers in bridge-channel MoS 2 field-effect transistors
journal, January 2015

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Magneto-optics in transition metal diselenide monolayers
journal, June 2015


Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure
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Direct versus indirect band gap emission and exciton-exciton annihilation in atomically thin molybdenum ditelluride ( MoTe 2 )
journal, August 2016

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Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures
journal, February 2017

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k.p theory for two-dimensional transition metal dichalcogenide semiconductors
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Fast and Highly Sensitive Ionic Polymer Gated WS$_2$-Graphene Photodetectors
text, January 2017


Simple vertex correction improves GW band energies of bulk and two-dimensional crystals
text, January 2017


Symmetry regimes for circular photocurrents in monolayer MoSe2
text, January 2018


Colloquium : Excitons in atomically thin transition metal dichalcogenides
text, January 2018

  • Wang, Gang; Chernikov, Alexey; Glazov, Mikhail M.
  • Universität Regensburg
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Trion fine structure and coupled spin–valley dynamics in monolayer tungsten disulfide
journal, September 2016

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Symmetry regimes for circular photocurrents in monolayer MoSe2
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Ionic gate spectroscopy of 2D semiconductors
journal, May 2021

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Effect of interlayer interactions on exciton luminescence in atomic-layered MoS2 crystals
journal, July 2016

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An anomalous interlayer exciton in MoS2
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Electrical control of spatial resolution in mixed-dimensional heterostructured photodetectors
journal, March 2019

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Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films
preprint, January 2015


Band parameters and hybridization in 2D semiconductor heterostructures from photoemission spectroscopy
preprint, January 2016