Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Lynn, D.; Pellegrini, G.; Fadeyev, V.; Galloway, Z.; Sadrozinski, H. F. -W.; Christophersen, M.; Philips, B. F.; Kierstead, J.; Hoeferkamp, M.; Gorelov, I.; Palni, P.; Wang, R.; Seidel, S.

doi:10.1016/j.sse.2015.11.029

Title: Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al₂O₃ dielectric

Journal Article · Thu Dec 10 23:00:00 EST 2015 · Solid-State Electronics

DOI: https://doi.org/10.1016/j.sse.2015.11.029 · OSTI ID:1257955

Lynn, D. ^[1]; Pellegrini, G. ^[2]; Fadeyev, V. ^[3]; Galloway, Z. ^[3]; Sadrozinski, H. F. -W. ^[3]; Christophersen, M. ^[4]; Philips, B. F. ^[4]; Kierstead, J. ^[1]; Hoeferkamp, M. ^[5]; Gorelov, I. ^[5]; Palni, P. ^[5]; Wang, R. ^[5]; Seidel, S. ^[5]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Instituto de Microelectonica de Barcelona, IMB-CNM (CSIC), Bellaterra (Spain)
Univ. of California, Santa Cruz, CA (United States)
U.S. Naval Research Lab., Washington, D.C. (United States)
Univ. of New Mexico, Albuquerque, NM (United States)

The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al₂O₃ layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al₂O₃ layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance–voltage and current–voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H₂O instead of O₃ as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H₂O-grown Al₂O₃ layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al₂O₃ layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O₃-grown MOS structures. Lastly, this can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)

OSTI ID:: 1257955

Report Number(s):: BNL--112248-2016-JA; KA2101020

Journal Information:: Solid-State Electronics, Journal Name: Solid-State Electronics Journal Issue: C Vol. 116; ISSN 0038-1101

Country of Publication:: United States

Language:: English

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24 POWER TRANSMISSION AND DISTRIBUTION
ALD
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gamma irradiation
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proton irradiation
thermal stability

Title: Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

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Title: Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al₂O₃ dielectric