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Title: Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al 2O 3 dielectric

The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al 2O 3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al 2O 3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance–voltage and current–voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H 2O instead of O 3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H 2O-grown Al 2O 3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al 2O 3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticedmore » for O 3-grown MOS structures. Lastly, this can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.« less
;  [1] ;  [2] ;  [3] ;  [3] ;  [3] ;  [4] ;  [4] ;  [1] ;  [5] ;  [5] ;  [5] ;  [5] ;  [5]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Instituto de Microelectonica de Barcelona, IMB-CNM (CSIC), Bellaterra (Spain)
  3. Univ. of California, Santa Cruz, CA (United States)
  4. U.S. Naval Research Lab., Washington, D.C. (United States)
  5. Univ. of New Mexico, Albuquerque, NM (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 0038-1101; KA2101020
Grant/Contract Number:
SC00112704; FG02-13ER41983; SC0012704
Accepted Manuscript
Journal Name:
Solid-State Electronics
Additional Journal Information:
Journal Volume: 116; Journal Issue: C; Journal ID: ISSN 0038-1101
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Country of Publication:
United States
24 POWER TRANSMISSION AND DISTRIBUTION; Al2O3; ALD; gamma irradiation; proton irradiation; irradiation effects; thermal stability
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1397330