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Title: Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric

Abstract

The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance–voltage and current–voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2O-grown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. Lastly, this can be explained by amore » trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.« less

Authors:
;  [1];  [2];  [3];  [3];  [3];  [4];  [4];  [1];  [5];  [5];  [5];  [5];  [5]
+ Show Author Affiliations
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Instituto de Microelectonica de Barcelona, IMB-CNM (CSIC), Bellaterra (Spain)
  3. Univ. of California, Santa Cruz, CA (United States)
  4. U.S. Naval Research Lab., Washington, D.C. (United States)
  5. Univ. of New Mexico, Albuquerque, NM (United States)
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP)
OSTI Identifier:
1257955
Alternate Identifier(s):
OSTI ID: 1397330
Report Number(s):
BNL-112248-2016-JA
Journal ID: ISSN 0038-1101; KA2101020
Grant/Contract Number:  
SC00112704; FG02-13ER41983; SC0010107
Resource Type:
Accepted Manuscript
Journal Name:
Solid-State Electronics
Additional Journal Information:
Journal Volume: 116; Journal Issue: C; Journal ID: ISSN 0038-1101
Country of Publication:
United States
Language:
English
Subject:
24 POWER TRANSMISSION AND DISTRIBUTION; Al2O3; ALD; gamma irradiation; proton irradiation; irradiation effects; thermal stability

Citation Formats

J. M. Rafi, Lynn, D., Pellegrini, G., Fadeyev, V., Galloway, Z., Sadrozinski, H. F. -W., Christophersen, M., Philips, B. F., Kierstead, J., Hoeferkamp, M., Gorelov, I., Palni, P., Wang, R., and Seidel, S. Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric. United States: N. p., 2015. Web. doi:10.1016/j.sse.2015.11.029.
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J. M. Rafi, Lynn, D., Pellegrini, G., Fadeyev, V., Galloway, Z., Sadrozinski, H. F. -W., Christophersen, M., Philips, B. F., Kierstead, J., Hoeferkamp, M., Gorelov, I., Palni, P., Wang, R., & Seidel, S. Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric. United States. https://doi.org/10.1016/j.sse.2015.11.029
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J. M. Rafi, Lynn, D., Pellegrini, G., Fadeyev, V., Galloway, Z., Sadrozinski, H. F. -W., Christophersen, M., Philips, B. F., Kierstead, J., Hoeferkamp, M., Gorelov, I., Palni, P., Wang, R., and Seidel, S. Fri . "Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric". United States. https://doi.org/10.1016/j.sse.2015.11.029. https://www.osti.gov/servlets/purl/1257955.
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@article{osti_1257955,
title = {Gamma and proton irradiation effects and thermal stability of electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O3 dielectric},
author = {J. M. Rafi and Lynn, D. and Pellegrini, G. and Fadeyev, V. and Galloway, Z. and Sadrozinski, H. F. -W. and Christophersen, M. and Philips, B. F. and Kierstead, J. and Hoeferkamp, M. and Gorelov, I. and Palni, P. and Wang, R. and Seidel, S.},
abstractNote = {The radiation hardness and thermal stability of the electrical characteristics of atomic layer deposited Al2O3 layers to be used as passivation films for silicon radiation detectors with slim edges are investigated. To directly measure the interface charge and to evaluate its change with the ionizing dose, metal-oxide-silicon (MOS) capacitors implementing differently processed Al2O3 layers were fabricated on p-type silicon substrates. Qualitatively similar results are obtained for degradation of capacitance–voltage and current–voltage characteristics under gamma and proton irradiations up to equivalent doses of 30 Mrad and 21.07 Mrad, respectively. While similar negative charge densities are initially extracted for all non-irradiated capacitors, superior radiation hardness is obtained for MOS structures with alumina layers grown with H2O instead of O3 as oxidant precursor. Competing effects between radiation-induced positive charge trapping and hydrogen release from the H2O-grown Al2O3 layers may explain their higher radiation resistance. Finally, irradiated and non-irradiated MOS capacitors with differently processed Al2O3 layers have been subjected to thermal treatments in air at temperatures ranging between 100 °C and 200 °C and the thermal stability of their electrical characteristics has been evaluated. Partial recovery of the gamma-induced degradation has been noticed for O3-grown MOS structures. Lastly, this can be explained by a trapped holes emission process, for which an activation energy of 1.38 ± 0.15 eV has been extracted.},
doi = {10.1016/j.sse.2015.11.029},
journal = {Solid-State Electronics},
number = C,
volume = 116,
place = {United States},
year = {Fri Dec 11 00:00:00 EST 2015},
month = {Fri Dec 11 00:00:00 EST 2015}
}
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Works referenced in this record:

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
journal, October 2006

High dielectric constant gate oxides for metal oxide Si transistors
journal, December 2005

Silicon surface passivation by atomic layer deposited Al2O3
journal, August 2008

  • Hoex, B.; Schmidt, J.; Pohl, P.
  • Journal of Applied Physics, Vol. 104, Issue 4
  • DOI: 10.1063/1.2963707

Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
journal, February 2011

  • Weber, J. R.; Janotti, A.; Van de Walle, C. G.
  • Journal of Applied Physics, Vol. 109, Issue 3
  • DOI: 10.1063/1.3544310

Status and prospects of Al 2 O 3 -based surface passivation schemes for silicon solar cells
journal, July 2012

  • Dingemans, G.; Kessels, W. M. M.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 4
  • DOI: 10.1116/1.4728205

Influence of the SiO 2 interlayer thickness on the density and polarity of charges in Si/SiO 2 /Al 2 O 3 stacks as studied by optical second-harmonic generation
journal, January 2014

  • Terlinden, N. M.; Dingemans, G.; Vandalon, V.
  • Journal of Applied Physics, Vol. 115, Issue 3
  • DOI: 10.1063/1.4857075

Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
journal, July 2006

  • Hoex, B.; Heil, S. B. S.; Langereis, E.
  • Applied Physics Letters, Vol. 89, Issue 4
  • DOI: 10.1063/1.2240736

Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
journal, November 2006

Response to minimum ionising particles of p-type substrate silicon microstrip detectors irradiated with neutrons to LHC upgrade doses
journal, October 2007

  • Casse, G.; Allport, P. P.; Greenall, A.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 581, Issue 1-2
  • DOI: 10.1016/j.nima.2007.07.136

Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
journal, April 2011

  • Hara, K.; Affolder, A. A.; Allport, P. P.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 636, Issue 1
  • DOI: 10.1016/j.nima.2010.04.090

Scribe–cleave–passivate (SCP) slim edge technology for silicon sensors
journal, December 2013

  • Fadeyev, V.; Sadrozinski, H. F. -W.; Ely, S.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 731
  • DOI: 10.1016/j.nima.2013.03.046

The effect of different dicing methods on the leakage currents of n-type silicon diodes and strip sensors
journal, March 2013

“Scribing-Cleaving-Passivation” for High Energy Physics Silicon Sensors
conference, July 2013

  • Christophersen, Marc
  • Proceedings of The 21st International Workshop on Vertex Detectors — PoS(Vertex 2012)
  • DOI: 10.22323/1.167.0020

Alumina and silicon oxide/nitride sidewall passivation for P- and N-type sensors
journal, January 2013

  • Christophersen, M.; Fadeyev, V.; Phlips, B. F.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 699
  • DOI: 10.1016/j.nima.2012.04.077

Development of n-in-p silicon planar pixel sensors and flip-chip modules for very high radiation environments
journal, September 2011

  • Unno, Y.; Ikegami, Y.; Terada, S.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 650, Issue 1
  • DOI: 10.1016/j.nima.2010.12.191

Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance
journal, November 2014

  • Fadeyev, V.; Ely, S.; Galloway, Z.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 765
  • DOI: 10.1016/j.nima.2014.05.032

Review on high-k dielectrics reliability issues
journal, March 2005

  • Ribes, G.; Mitard, J.; Denais, M.
  • IEEE Transactions on Device and Materials Reliability, Vol. 5, Issue 1
  • DOI: 10.1109/TDMR.2005.845236

Effects of radiation and charge trapping on the reliability of high- κ gate dielectrics
journal, April 2004

Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation
journal, January 2002

  • Choi, B. K.; Fleetwood, D. M.; Massengill, L. W.
  • Electronics Letters, Vol. 38, Issue 4
  • DOI: 10.1049/el:20020119

2MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness
journal, September 2013

Charge trapping and annealing in high-/spl kappa/ gate dielectrics
journal, December 2004

  • Felix, J. A.; Shaneyfelt, M. R.; Fleetwood, D. M.
  • IEEE Transactions on Nuclear Science, Vol. 51, Issue 6
  • DOI: 10.1109/TNS.2004.839204

Blistering in ALD Al2O3 passivation layers as rear contacting for local Al BSF Si solar cells
journal, June 2012

Blistering of atomic layer deposition Al 2 O 3 layers grown on silicon and its effect on metal–insulator–semiconductor structures
journal, January 2013

  • Beldarrain, Oihane; Duch, Marta; Zabala, Miguel
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 1
  • DOI: 10.1116/1.4768170

Passivation and interface state density of SiO2/HfO2-based/polycrystalline-Si gate stacks
journal, July 2003

  • Carter, R. J.; Cartier, E.; Kerber, A.
  • Applied Physics Letters, Vol. 83, Issue 3
  • DOI: 10.1063/1.1592639

'Border traps' in MOS devices
journal, April 1992

  • Fleetwood, D. M.
  • IEEE Transactions on Nuclear Science, Vol. 39, Issue 2
  • DOI: 10.1109/23.277495

Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics
journal, February 2003

  • Kerber, A.; Cartier, E.; Pantisano, L.
  • IEEE Electron Device Letters, Vol. 24, Issue 2
  • DOI: 10.1109/LED.2003.808844

Comparison between Al2O3 thin films grown by ALD using H2O or O3 as oxidant source
conference, February 2011

  • Campabadal, F.; Beldarrain, O.; Zabala, M.
  • 2011 Spanish Conference on Electron Devices (CDE), Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
  • DOI: 10.1109/SCED.2011.5744238

Process Temperature Dependence of Al 2 O 3 Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells
journal, December 2013

  • Oh, Sung-Kwen; Shin, Hong-Sik; Jeong, Kwang-Seok
  • JSTS:Journal of Semiconductor Technology and Science, Vol. 13, Issue 6
  • DOI: 10.5573/JSTS.2013.13.6.581

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon
journal, January 2011

  • Rafí, J. M.; Zabala, M.; Beldarrain, O.
  • Journal of The Electrochemical Society, Vol. 158, Issue 5
  • DOI: 10.1149/1.3559458

Impact of Forming Gas Annealing and Firing on the Al2O3/p-Si Interface State Spectrum
journal, January 2011

  • Simoen, E.; Rothschild, A.; Vermang, B.
  • Electrochemical and Solid-State Letters, Vol. 14, Issue 9
  • DOI: 10.1149/1.3597661

Low Temperature (<100°C) Deposition of Aluminum Oxide Thin Films by ALD with O[sub 3] as Oxidant
journal, January 2006

  • Kim, Seong Keun; Lee, Suk Woo; Hwang, Cheol Seong
  • Journal of The Electrochemical Society, Vol. 153, Issue 5
  • DOI: 10.1149/1.2177047

Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]
journal, January 2011

  • Dingemans, G.; Terlinden, N. M.; Pierreux, D.
  • Electrochemical and Solid-State Letters, Vol. 14, Issue 1
  • DOI: 10.1149/1.3501970

Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
journal, October 2010

  • Dingemans, G.; Beyer, W.; van de Sanden, M. C. M.
  • Applied Physics Letters, Vol. 97, Issue 15, Article No. 152106
  • DOI: 10.1063/1.3497014

Barrier parameter variation in Al‐Al 2 O 3 ‐metal tunnel junctions
journal, November 1992

  • Shu, Q. Q.; Ma, W. G.
  • Applied Physics Letters, Vol. 61, Issue 21
  • DOI: 10.1063/1.108145

Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates
journal, June 2002

Surface preparation and post thermal treatment effects on interface properties of thin Al2O3 films deposited by ALD
journal, April 2004

Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O3 and nanolaminated films deposited on p-Si
journal, January 2011

  • Gómez, A.; Castán, H.; García, H.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 1
  • DOI: 10.1116/1.3521383

Radiation-induced charge trapping in thin Al/sub 2/O/sub 3/SiO/sub x/N/sub y/Si[100] gate dielectric stacks
journal, December 2003

  • Felix, J. A.; Shaneyfelt, M. R.; Fleetwood, D. M.
  • IEEE Transactions on Nuclear Science, Vol. 50, Issue 6
  • DOI: 10.1109/TNS.2003.820763

Evaluation of modern gate oxide technologies to process charging
conference, January 1993

  • Crook, D.; Domnitei, M.; Webb, M.
  • Proceedings of IEEE International Reliability Physics Symposium, 31st Annual Proceedings Reliability Physics 1993
  • DOI: 10.1109/RELPHY.1993.283316

Ionizing radiation induced leakage current on ultra-thin gate oxides
journal, January 1997

  • Scarpa, A.; Paccagnella, A.; Montera, F.
  • IEEE Transactions on Nuclear Science, Vol. 44, Issue 6
  • DOI: 10.1109/23.658948

Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides
journal, September 2002

Total ionizing dose effects in MOS oxides and devices
journal, June 2003

Negative charge and charging dynamics in Al[sub 2]O[sub 3] films on Si characterized by second-harmonic generation
journal, January 2008

  • Gielis, J. J. H.; Hoex, B.; van de Sanden, M. C. M.
  • Journal of Applied Physics, Vol. 104, Issue 7
  • DOI: 10.1063/1.2985906

The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al 2 O 3
journal, January 2013

  • Liao, Baochen; Stangl, Rolf; Mueller, Thomas
  • Journal of Applied Physics, Vol. 113, Issue 2
  • DOI: 10.1063/1.4775595

Modeling the anneal of radiation-induced trapped holes in a varying thermal environment
journal, January 1990

  • McWhorter, P. J.; Miller, S. L.; Miller, W. M.
  • IEEE Transactions on Nuclear Science, Vol. 37, Issue 6
  • DOI: 10.1109/23.101177

Physical Mechanisms Contributing to Device "Rebound"
journal, January 1984

  • Schwank, J. R.; Winokur, P. S.; McWhorter, P. J.
  • IEEE Transactions on Nuclear Science, Vol. 31, Issue 6
  • DOI: 10.1109/TNS.1984.4333525

Comparison of the electrical and thermal stability of stress- or radiation-induced leakage current in thin oxides
journal, February 2000

  • Riess, P.; Ceschia, M.; Paccagnella, A.
  • Applied Physics Letters, Vol. 76, Issue 9
  • DOI: 10.1063/1.125969

Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs
journal, May 2009

Charge stability in LPCVD silicon nitride for surface passivation of silicon solar cells
conference, June 2010

  • Ren, Yongling; Nursam, Natalita M.; Wang, Da
  • 2010 35th IEEE Photovoltaic Specialists Conference (PVSC)
  • DOI: 10.1109/PVSC.2010.5614143
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    Works referencing / citing this record:

    Studies of radiation effects in Al 2 O 3 -based metal-oxide-semiconductor structures induced by Si heavy ions
    journal, March 2019

    • Zhang, J.; Chen, X.; Wang, L.
    • Journal of Applied Physics, Vol. 125, Issue 11
    • DOI: 10.1063/1.5052584
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