Red-emitting manganese-doped aluminum nitride phosphor

Cherepy, Nerine J.; Payne, Stephen A.; Harvey, Nicholas M.; Aberg, Daniel; Seeley, Zachary M.; Holliday, Kiel S.; Tran, Ich C.; Zhou, Fei; Martinez, H. Paul; Demeyer, Jessica M.; Drobshoff, Alexander D.; Srivastava, Alok M.; Camardello, Samuel J.; Comanzo, Holly A.; Schlagel, Deborah L.; Lograsso, Thomas A.

doi:10.1016/j.optmat.2016.02.008

Title: Red-emitting manganese-doped aluminum nitride phosphor

Authors:

Cherepy, Nerine J. ^[1]; Payne, Stephen A. ^[1]; Harvey, Nicholas M. ^[1]; Aberg, Daniel ^[1]; Seeley, Zachary M. ^[1]; Holliday, Kiel S. ^[1]; Tran, Ich C. ^[1]; Zhou, Fei ^[1]; Martinez, H. Paul ^[1]; Demeyer, Jessica M. ^[1]; Drobshoff, Alexander D. ^[1]; Srivastava, Alok M. ^[2]; Camardello, Samuel J. ^[2]; Comanzo, Holly A. ^[2];

^[3]; Lograsso, Thomas A. ^[3]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
GE Global Research, Niskayuna, NY (United States)
Ames Lab., Ames, IA (United States)

Publication Date:: Wed Feb 10 00:00:00 EST 2016

Research Org.:: Ames Lab., Ames, IA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1254325

Alternate Identifier(s):: OSTI ID: 1337412; OSTI ID: 1366937

Report Number(s):: IS-J-8996; LLNL-JRNL-681485
Journal ID: ISSN 0925-3467; PII: S0925346716300696

Grant/Contract Number:: AC02-07CH11358; AC02-76SF00515; AC52-07NA27344

Resource Type:: Accepted Manuscript

Journal Name:: Optical Materials

Additional Journal Information:: Journal Volume: 54; Journal Issue: C; Journal ID: ISSN 0925-3467

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; red phosphor; aluminum nitride; manganese emission; lighting phosphor; nitride phosphor

Citation Formats


                    Cherepy, Nerine J., Payne, Stephen A., Harvey, Nicholas M., Aberg, Daniel, Seeley, Zachary M., Holliday, Kiel S., Tran, Ich C., Zhou, Fei, Martinez, H. Paul, Demeyer, Jessica M., Drobshoff, Alexander D., Srivastava, Alok M., Camardello, Samuel J., Comanzo, Holly A., Schlagel, Deborah L., and Lograsso, Thomas A. Red-emitting manganese-doped aluminum nitride phosphor.  United States: N. p., 2016. 
Web.  doi:10.1016/j.optmat.2016.02.008.

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                    Cherepy, Nerine J., Payne, Stephen A., Harvey, Nicholas M., Aberg, Daniel, Seeley, Zachary M., Holliday, Kiel S., Tran, Ich C., Zhou, Fei, Martinez, H. Paul, Demeyer, Jessica M., Drobshoff, Alexander D., Srivastava, Alok M., Camardello, Samuel J., Comanzo, Holly A., Schlagel, Deborah L., & Lograsso, Thomas A. Red-emitting manganese-doped aluminum nitride phosphor.  United States.  https://doi.org/10.1016/j.optmat.2016.02.008

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                    Cherepy, Nerine J., Payne, Stephen A., Harvey, Nicholas M., Aberg, Daniel, Seeley, Zachary M., Holliday, Kiel S., Tran, Ich C., Zhou, Fei, Martinez, H. Paul, Demeyer, Jessica M., Drobshoff, Alexander D., Srivastava, Alok M., Camardello, Samuel J., Comanzo, Holly A., Schlagel, Deborah L., and Lograsso, Thomas A. Wed .  
"Red-emitting manganese-doped aluminum nitride phosphor".  United States.  https://doi.org/10.1016/j.optmat.2016.02.008.  https://www.osti.gov/servlets/purl/1254325.

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@article{osti_1254325,

  title        = {Red-emitting manganese-doped aluminum nitride phosphor},

  author       = {Cherepy, Nerine J. and Payne, Stephen A. and Harvey, Nicholas M. and Aberg, Daniel and Seeley, Zachary M. and Holliday, Kiel S. and Tran, Ich C. and Zhou, Fei and Martinez, H. Paul and Demeyer, Jessica M. and Drobshoff, Alexander D. and Srivastava, Alok M. and Camardello, Samuel J. and Comanzo, Holly A. and Schlagel, Deborah L. and Lograsso, Thomas A.},

  abstractNote = {},

  doi          = {10.1016/j.optmat.2016.02.008},

  journal      = {Optical Materials},

  number       = C,

  volume       = 54,

  place        = {United States},

  year         = {Wed Feb 10 00:00:00 EST 2016},

  month        = {Wed Feb 10 00:00:00 EST 2016}

}

Copy to clipboard

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Accepted Manuscript (DOE)

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https://doi.org/10.1016/j.optmat.2016.02.008

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Cited by: 22 works

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Works referenced in this record:

Rare-Earth Activated Nitride Phosphors: Synthesis, Luminescence and Applications
journal, June 2010

Xie, Rong-Jun; Hirosaki, Naoto; Li, Yuanqiang
Materials, Vol. 3, Issue 6
DOI: 10.3390/ma3063777

Structural and luminescence studies of the new nitridomagnesoaluminate CaMg ₂ AlN ₃
journal, January 2015

Kubus, M.; Levin, K.; Kroeker, S.
Dalton Transactions, Vol. 44, Issue 6
DOI: 10.1039/C4DT03283G

Red emission from Mn2+ on a tetrahedral site in MgSiN2
journal, June 2009

Duan, C. J.; Delsing, A. C. A.; Hintzen, H. T.
Journal of Luminescence, Vol. 129, Issue 6
DOI: 10.1016/j.jlumin.2009.01.010

Photoluminescence Properties of Red-Emitting Mn ²⁺ -Activated CaAlSiN ₃ Phosphor for White-LEDs
journal, January 2013

Zhang, Zhijun; Delsing, Anneke C. A.; Notten, Peter H. L.
ECS Journal of Solid State Science and Technology, Vol. 2, Issue 4
DOI: 10.1149/2.017304jss

Luminescence in the System Al[sub 2]O[sub 3]-AIN
journal, January 1962

Adams, I.; AuCoin, T. R.; Wolff, G. A.
Journal of The Electrochemical Society, Vol. 109, Issue 11
DOI: 10.1149/1.2425234

Fine Structure of Emission Spectra of the Red AIN:Mn Luminescence
journal, January 1966

Karel, Fr.; Pastrňák, J.; Hejduk, J.
physica status solidi (b), Vol. 15, Issue 2
DOI: 10.1002/pssb.19660150230

Low-temperature metalorganic chemical vapor deposition of luminescent manganese-doped aluminum nitride films
journal, July 2005

Sato, A.; Azumada, K.; Atsumori, T.
Applied Physics Letters, Vol. 87, Issue 2
DOI: 10.1063/1.1992669

Characterization of AlN:Mn thin film phosphors prepared by metalorganic chemical vapor deposition
journal, January 2007

Sato, Ayumu; Azumada, Kyoko; Atsumori, Toshiyuki
Journal of Crystal Growth, Vol. 298, p. 379-382
DOI: 10.1016/j.jcrysgro.2006.10.042

Aerosol synthesis of AlN by nitridation of aluminum vapor and clusters
journal, March 1995

Pratsinis, Sotiris E.; Wang, Guizhi; Panda, Siddhartha
Journal of Materials Research, Vol. 10, Issue 3
DOI: 10.1557/JMR.1995.0512

Formation of aluminum nitride from metal–organic precursors synthesized by reacting aluminum tri-chloride with bis(trimethylsilyl)carbodiimide
journal, January 2015

Shimokawa, Yohei; Fujiwara, Akikazu; Ionescu, Emanuel
Journal of the Ceramic Society of Japan, Vol. 123, Issue 1435
DOI: 10.2109/jcersj2.123.106

Optical Spectra of Exchange Coupled Mn ⁺⁺ Ion Pairs in ZnS:MnS
journal, December 1963

McClure, Donald S.
The Journal of Chemical Physics, Vol. 39, Issue 11
DOI: 10.1063/1.1734115

Luminescence of Exchange Coupled Pairs of Transition Metal Ions
journal, January 2001

Vink, A. P.; de Bruin, M. A.; Roke, S.
Journal of The Electrochemical Society, Vol. 148, Issue 7
DOI: 10.1149/1.1375169

Synthesis and characterization of Mn-activated lithium aluminate red phosphors
journal, April 2013

Aoyama, Masahiro; Amano, Yusuke; Inoue, Koji
Journal of Luminescence, Vol. 136
DOI: 10.1016/j.jlumin.2012.12.012

Luminescence Properties of Red Long-Lasting Phosphorescence Phosphor AlN:Mn ²⁺
journal, January 2013

Zhang, Haoran; Zheng, Mingtao; Lei, Bingfu
ECS Journal of Solid State Science and Technology, Vol. 2, Issue 7
DOI: 10.1149/2.006307jss

Localised transitions in luminescence of AlN ceramics
journal, December 2014

Trinkler, L.; Berzina, B.
Radiation Measurements, Vol. 71
DOI: 10.1016/j.radmeas.2014.02.016

Some effects of oxygen impurities on AlN and GaN
journal, December 2002

Slack, Glen A.; Schowalter, Leo J.; Morelli, Donald
Journal of Crystal Growth, Vol. 246, Issue 3-4, p. 287-298
DOI: 10.1016/S0022-0248(02)01753-0

Luminescence Studies of Oxygen-Related Defects In Aluminum Nitride
journal, November 1990

Youngman, Robert A.; Harris, Jonathan H.
Journal of the American Ceramic Society, Vol. 73, Issue 11
DOI: 10.1111/j.1151-2916.1990.tb06444.x

A high efficiency rare earth-free orange emitting phosphor
journal, August 2015

Polikarpov, E.; Catalini, D.; Padmaperuma, A.
Optical Materials, Vol. 46
DOI: 10.1016/j.optmat.2015.04.013

Phosphor Deterioration in Fluorescent Lamps
journal, February 1983

Lehmann, Willi
Journal of The Electrochemical Society, Vol. 130, Issue 2
DOI: 10.1149/1.2119725

Projector augmented-wave method
journal, December 1994

Blöchl, P. E.
Physical Review B, Vol. 50, Issue 24, p. 17953-17979
DOI: 10.1103/PhysRevB.50.17953

Ab initiomolecular dynamics for liquid metals
journal, January 1993

Kresse, G.; Hafner, J.
Physical Review B, Vol. 47, Issue 1, p. 558-561
DOI: 10.1103/PhysRevB.47.558

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Kresse, G.; Furthmüller, J.
Computational Materials Science, Vol. 6, Issue 1, p. 15-50
DOI: 10.1016/0927-0256(96)00008-0

Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]
journal, February 1997

Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
Physical Review Letters, Vol. 78, Issue 7
DOI: 10.1103/PhysRevLett.78.1396

Rationale for mixing exact exchange with density functional approximations
journal, December 1996

Perdew, John P.; Ernzerhof, Matthias; Burke, Kieron
The Journal of Chemical Physics, Vol. 105, Issue 22, p. 9982-9985
DOI: 10.1063/1.472933

Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion
journal, October 1991

Zhang, S.; Northrup, John
Physical Review Letters, Vol. 67, Issue 17
DOI: 10.1103/PhysRevLett.67.2339

$n$ -type doping of $CuIn {Se}_{2}$ and $CuGa {Se}_{2}$
journal, July 2005

Persson, Clas; Zhao, Yu-Jun; Lany, Stephan
Physical Review B, Vol. 72, Issue 3
DOI: 10.1103/PhysRevB.72.035211

Intrinsic point defects in aluminum antimonide
journal, April 2008

Åberg, Daniel; Erhart, Paul; Williamson, Andrew J.
Physical Review B, Vol. 77, Issue 16
DOI: 10.1103/PhysRevB.77.165206

Periodic boundary conditions in ab initio calculations
journal, February 1995

Makov, G.; Payne, M. C.
Physical Review B, Vol. 51, Issue 7
DOI: 10.1103/PhysRevB.51.4014

Spectroscopic fingerprints of valence and spin states in manganese oxides and fluorides
journal, May 2013

Qiao, Ruimin; Chin, Timothy; Harris, Stephen J.
Current Applied Physics, Vol. 13, Issue 3
DOI: 10.1016/j.cap.2012.09.017

High resolution soft X-ray absorption spectroscopy for the chemical state analysis of Mn
journal, September 2000

Kawai, Jun; Mizutani, Yoshinobu; Sugimura, Tetsuro
Spectrochimica Acta Part B: Atomic Spectroscopy, Vol. 55, Issue 9
DOI: 10.1016/S0584-8547(00)00238-X

Thermoluminescence of AlN. Influence of Synthesis Processes
journal, June 1995

Benabdesselam, M.; Iacconi, P.; Lapraz, D.
The Journal of Physical Chemistry, Vol. 99, Issue 25
DOI: 10.1021/j100025a038

Analysis of vaporization kinetics of group-III nitrides
journal, January 1997

Averyanova, M. V.; Przhevalskii, I. N.; Karpov, S. Yu.
Materials Science and Engineering: B, Vol. 43, Issue 1-3
DOI: 10.1016/S0921-5107(96)01856-9

Ab initio study of oxygen point defects in GaAs, GaN, and AlN
journal, December 1996

Mattila, T.; Nieminen, R. M.
Physical Review B, Vol. 54, Issue 23
DOI: 10.1103/PhysRevB.54.16676

Theory of point defects in GaN, AlN, and BN: Relaxation and pressure effects
journal, September 1999

Gorczyca, I.; Svane, A.; Christensen, N. E.
Physical Review B, Vol. 60, Issue 11
DOI: 10.1103/PhysRevB.60.8147

Concentration of point defects in wurtzite AlN: A hybrid functional study
journal, May 2012

Silvestri, Leonardo; Dunn, Kerry; Prawer, Steven
EPL (Europhysics Letters), Vol. 98, Issue 3
DOI: 10.1209/0295-5075/98/36003

Origins of optical absorption and emission lines in AlN
journal, September 2014

Yan, Qimin; Janotti, Anderson; Scheffler, Matthias
Applied Physics Letters, Vol. 105, Issue 11
DOI: 10.1063/1.4895786

Influence of Si on the particle growth of AlN ceramics
journal, October 2014

Cho, Yujin; Dierre, Benjamin; Takeda, Takashi
Applied Physics Express, Vol. 7, Issue 11
DOI: 10.7567/APEX.7.115503

Defects and luminescence control of AlN ceramic by Si-doping
journal, January 2016

Cho, Yujin; Dierre, Benjamin; Fukata, Naoki
Scripta Materialia, Vol. 110
DOI: 10.1016/j.scriptamat.2015.08.013

Tunable luminescence Y_3Al_5O_12:006Ce^3+, xMn^2+ phosphors with different charge compensators for warm white light emitting diodes
journal, January 2012

Shi, Yurong; Wang, Yuhua; Wen, Yan
Optics Express, Vol. 20, Issue 19
DOI: 10.1364/OE.20.021656

Works referencing / citing this record:

Critical Review—Narrow-Band Emission of Nitride Phosphors for Light-Emitting Diodes: Perspectives and Opportunities
journal, July 2017

Leaño, Julius L.; Fang, Mu-Huai; Liu, Ru-Shi
ECS Journal of Solid State Science and Technology, Vol. 7, Issue 1
DOI: 10.1149/2.0161801jss

The optical spectrum of UVLED excitation using NTC nanometer particles to replace rare earth doping
journal, January 2019

Su, Lihong; Chen, Kan; Liu, Yongqiang
MRS Advances, Vol. 4, Issue 33-34
DOI: 10.1557/adv.2019.240

Slow decay of a defect-related emission band at 2.05 eV in AlN: Signatures of oxygen-related DX states: Slow decay of defect-related emission band at 2.05 eV
journal, November 2016

Lamprecht, M.; Grund, C.; Bauer, S.
physica status solidi (b), Vol. 254, Issue 5
DOI: 10.1002/pssb.201600338

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Title: Red-emitting manganese-doped aluminum nitride phosphor

Citation Formats

Rare-Earth Activated Nitride Phosphors: Synthesis, Luminescence and Applications journal, June 2010

Structural and luminescence studies of the new nitridomagnesoaluminate CaMg 2 AlN 3 journal, January 2015

Red emission from Mn2+ on a tetrahedral site in MgSiN2 journal, June 2009

Photoluminescence Properties of Red-Emitting Mn 2+ -Activated CaAlSiN 3 Phosphor for White-LEDs journal, January 2013

Luminescence in the System Al[sub 2]O[sub 3]-AIN journal, January 1962

Fine Structure of Emission Spectra of the Red AIN:Mn Luminescence journal, January 1966

Low-temperature metalorganic chemical vapor deposition of luminescent manganese-doped aluminum nitride films journal, July 2005

Characterization of AlN:Mn thin film phosphors prepared by metalorganic chemical vapor deposition journal, January 2007

Aerosol synthesis of AlN by nitridation of aluminum vapor and clusters journal, March 1995

Formation of aluminum nitride from metal–organic precursors synthesized by reacting aluminum tri-chloride with bis(trimethylsilyl)carbodiimide journal, January 2015

Optical Spectra of Exchange Coupled Mn ++ Ion Pairs in ZnS:MnS journal, December 1963

Luminescence of Exchange Coupled Pairs of Transition Metal Ions journal, January 2001

Synthesis and characterization of Mn-activated lithium aluminate red phosphors journal, April 2013

Luminescence Properties of Red Long-Lasting Phosphorescence Phosphor AlN:Mn 2+ journal, January 2013

Localised transitions in luminescence of AlN ceramics journal, December 2014

Some effects of oxygen impurities on AlN and GaN journal, December 2002

Luminescence Studies of Oxygen-Related Defects In Aluminum Nitride journal, November 1990

A high efficiency rare earth-free orange emitting phosphor journal, August 2015

Phosphor Deterioration in Fluorescent Lamps journal, February 1983

Projector augmented-wave method journal, December 1994

Ab initiomolecular dynamics for liquid metals journal, January 1993

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal, July 1996

Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)] journal, February 1997

Rationale for mixing exact exchange with density functional approximations journal, December 1996

Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion journal, October 1991

n -type doping of CuIn Se 2 and CuGa Se 2 journal, July 2005

Intrinsic point defects in aluminum antimonide journal, April 2008

Periodic boundary conditions in ab initio calculations journal, February 1995

Spectroscopic fingerprints of valence and spin states in manganese oxides and fluorides journal, May 2013

High resolution soft X-ray absorption spectroscopy for the chemical state analysis of Mn journal, September 2000

Thermoluminescence of AlN. Influence of Synthesis Processes journal, June 1995

Analysis of vaporization kinetics of group-III nitrides journal, January 1997

Ab initio study of oxygen point defects in GaAs, GaN, and AlN journal, December 1996

Theory of point defects in GaN, AlN, and BN: Relaxation and pressure effects journal, September 1999

Concentration of point defects in wurtzite AlN: A hybrid functional study journal, May 2012

Origins of optical absorption and emission lines in AlN journal, September 2014

Influence of Si on the particle growth of AlN ceramics journal, October 2014

Defects and luminescence control of AlN ceramic by Si-doping journal, January 2016

Tunable luminescence Y_3Al_5O_12:006Ce^3+, xMn^2+ phosphors with different charge compensators for warm white light emitting diodes journal, January 2012

Critical Review—Narrow-Band Emission of Nitride Phosphors for Light-Emitting Diodes: Perspectives and Opportunities journal, July 2017

The optical spectrum of UVLED excitation using NTC nanometer particles to replace rare earth doping journal, January 2019

Slow decay of a defect-related emission band at 2.05 eV in AlN: Signatures of oxygen-related DX states: Slow decay of defect-related emission band at 2.05 eV journal, November 2016

Rare-Earth Activated Nitride Phosphors: Synthesis, Luminescence and Applications
journal, June 2010

Structural and luminescence studies of the new nitridomagnesoaluminate CaMg ₂ AlN ₃
journal, January 2015

Red emission from Mn2+ on a tetrahedral site in MgSiN2
journal, June 2009

Photoluminescence Properties of Red-Emitting Mn ²⁺ -Activated CaAlSiN ₃ Phosphor for White-LEDs
journal, January 2013

Luminescence in the System Al[sub 2]O[sub 3]-AIN
journal, January 1962

Fine Structure of Emission Spectra of the Red AIN:Mn Luminescence
journal, January 1966

Low-temperature metalorganic chemical vapor deposition of luminescent manganese-doped aluminum nitride films
journal, July 2005

Characterization of AlN:Mn thin film phosphors prepared by metalorganic chemical vapor deposition
journal, January 2007

Aerosol synthesis of AlN by nitridation of aluminum vapor and clusters
journal, March 1995

Formation of aluminum nitride from metal–organic precursors synthesized by reacting aluminum tri-chloride with bis(trimethylsilyl)carbodiimide
journal, January 2015

Optical Spectra of Exchange Coupled Mn ⁺⁺ Ion Pairs in ZnS:MnS
journal, December 1963

Luminescence of Exchange Coupled Pairs of Transition Metal Ions
journal, January 2001

Synthesis and characterization of Mn-activated lithium aluminate red phosphors
journal, April 2013

Luminescence Properties of Red Long-Lasting Phosphorescence Phosphor AlN:Mn ²⁺
journal, January 2013

Localised transitions in luminescence of AlN ceramics
journal, December 2014

Some effects of oxygen impurities on AlN and GaN
journal, December 2002

Luminescence Studies of Oxygen-Related Defects In Aluminum Nitride
journal, November 1990

A high efficiency rare earth-free orange emitting phosphor
journal, August 2015

Phosphor Deterioration in Fluorescent Lamps
journal, February 1983

Projector augmented-wave method
journal, December 1994

Ab initiomolecular dynamics for liquid metals
journal, January 1993

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996

Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]
journal, February 1997

Rationale for mixing exact exchange with density functional approximations
journal, December 1996

Chemical potential dependence of defect formation energies in GaAs: Application to Ga self-diffusion
journal, October 1991

$n$ -type doping of $CuIn {Se}_{2}$ and $CuGa {Se}_{2}$
journal, July 2005

Intrinsic point defects in aluminum antimonide
journal, April 2008

Periodic boundary conditions in ab initio calculations
journal, February 1995

Spectroscopic fingerprints of valence and spin states in manganese oxides and fluorides
journal, May 2013

High resolution soft X-ray absorption spectroscopy for the chemical state analysis of Mn
journal, September 2000

Thermoluminescence of AlN. Influence of Synthesis Processes
journal, June 1995

Analysis of vaporization kinetics of group-III nitrides
journal, January 1997

Ab initio study of oxygen point defects in GaAs, GaN, and AlN
journal, December 1996

Theory of point defects in GaN, AlN, and BN: Relaxation and pressure effects
journal, September 1999

Concentration of point defects in wurtzite AlN: A hybrid functional study
journal, May 2012

Origins of optical absorption and emission lines in AlN
journal, September 2014

Influence of Si on the particle growth of AlN ceramics
journal, October 2014

Defects and luminescence control of AlN ceramic by Si-doping
journal, January 2016

Tunable luminescence Y_3Al_5O_12:006Ce^3+, xMn^2+ phosphors with different charge compensators for warm white light emitting diodes
journal, January 2012

Critical Review—Narrow-Band Emission of Nitride Phosphors for Light-Emitting Diodes: Perspectives and Opportunities
journal, July 2017

The optical spectrum of UVLED excitation using NTC nanometer particles to replace rare earth doping
journal, January 2019

Slow decay of a defect-related emission band at 2.05 eV in AlN: Signatures of oxygen-related DX states: Slow decay of defect-related emission band at 2.05 eV
journal, November 2016