Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; Hartman, Alan; Tupta, Mary Ann; Baczewski, Andrew David; Crimp, Martin A.; Halpern, Joshua B.; He, Maoqi; Shaw, Harry C.

doi:10.1088/0957-4484/18/47/475710

Title: Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

Journal Article · Fri Oct 19 00:00:00 EDT 2007 · Nanotechnology

DOI: https://doi.org/10.1088/0957-4484/18/47/475710 · OSTI ID:1252695

Jacobs, Benjamin W. ^[1]; Ayres, Virginia M. ^[1]; Stallcup, Richard E. ^[2]; Hartman, Alan ^[2]; Tupta, Mary Ann ^[3]; Baczewski, Andrew David ^[1]; Crimp, Martin A. ^[1]; Halpern, Joshua B. ^[4]; He, Maoqi ^[4]; Shaw, Harry C. ^[5]

Michigan State Univ., East Lansing, MI (United States)
Zyvex Instruments, Richardson, TX (United States)
Keithley Instruments, Inc., Cleveland, OH (United States)
Howard Univ., Washington, D.C. (United States)
NASA Goddard Space Flight Center, Greenbelt, MD (United States)

Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1252695

Report Number(s):: SAND--2016-1052J; 619144

Journal Information:: Nanotechnology, Journal Name: Nanotechnology Journal Issue: 47 Vol. 18; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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