Zero added oxygen for high quality sputtered ITO. A data science investigation of reduced Sn-content and added Zr

Peshek, Timothy J.; Burst, James M.; Coutts, Timothy J.; Gessert, Timothy A.

doi:10.1116/1.4939830

Title: Zero added oxygen for high quality sputtered ITO. A data science investigation of reduced Sn-content and added Zr

Abstract

Here, we demonstrate mobilities of >45 cm²/V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO₂, instead of the more conventional 8–10 wt. %, and had varying ZrO₂ content from 0 to 3 wt. %, with a subsequent reduction in In₂O₃ content. Moreover, these films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discovered for nominally similar growth conditions. However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. Our result is attributed to the reduced concentration of SnO₂. The addition of ZrO₂ yielded the highest mobilities at >55 cm²/V s and the films showed a modest increase in optical transmission with increasing Zr-content.

Authors:

Peshek, Timothy J. ^[1]; Burst, James M. ^[1]; Coutts, Timothy J. ^[1]; Gessert, Timothy A. ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Tue Jan 19 00:00:00 EST 2016

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1238327

Report Number(s):: NREL/JA-5K00-65866
Journal ID: ISSN 0734-2101; JVTAD6

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology A

Additional Journal Information:: Journal Volume: 34; Journal Issue: 2; Journal ID: ISSN 0734-2101

Publisher:: American Vacuum Society

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; thin films; sputter deposition; electrical resistivity; carrier density; high pressure

Citation Formats


                    Peshek, Timothy J., Burst, James M., Coutts, Timothy J., and Gessert, Timothy A. Zero added oxygen for high quality sputtered ITO. A data science investigation of reduced Sn-content and added Zr.  United States: N. p., 2016. 
Web.  doi:10.1116/1.4939830.

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                    Peshek, Timothy J., Burst, James M., Coutts, Timothy J., & Gessert, Timothy A. Zero added oxygen for high quality sputtered ITO. A data science investigation of reduced Sn-content and added Zr.  United States.  https://doi.org/10.1116/1.4939830

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                    Peshek, Timothy J., Burst, James M., Coutts, Timothy J., and Gessert, Timothy A. Tue .  
"Zero added oxygen for high quality sputtered ITO. A data science investigation of reduced Sn-content and added Zr".  United States.  https://doi.org/10.1116/1.4939830.  https://www.osti.gov/servlets/purl/1238327.

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@article{osti_1238327,

  title        = {Zero added oxygen for high quality sputtered ITO. A data science investigation of reduced Sn-content and added Zr},

  author       = {Peshek, Timothy J. and Burst, James M. and Coutts, Timothy J. and Gessert, Timothy A.},

  abstractNote = {Here, we demonstrate mobilities of >45 cm2/V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO2, instead of the more conventional 8–10 wt. %, and had varying ZrO2 content from 0 to 3 wt. %, with a subsequent reduction in In2O3 content. Moreover, these films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discovered for nominally similar growth conditions. However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. Our result is attributed to the reduced concentration of SnO2. The addition of ZrO2 yielded the highest mobilities at >55 cm2/V s and the films showed a modest increase in optical transmission with increasing Zr-content.},

  doi          = {10.1116/1.4939830},

  journal      = {Journal of Vacuum Science and Technology A},

  number       = 2,

  volume       = 34,

  place        = {United States},

  year         = {Tue Jan 19 00:00:00 EST 2016},

  month        = {Tue Jan 19 00:00:00 EST 2016}

}

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Works referencing / citing this record:

Design of n-Type Transparent Conducting Oxides: The Case of Transition Metal Doping in In ₂ O ₃
journal, February 2018

Xu, Jian; Liu, Jian-Bo; Liu, Bai-Xin
Advanced Electronic Materials, Vol. 4, Issue 3
DOI: 10.1002/aelm.201700553

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Title: Zero added oxygen for high quality sputtered ITO. A data science investigation of reduced Sn-content and added Zr

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