skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs 0.91Sb 0.09 alloy nBn photodetectors

Abstract

Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs 0.91Sb 0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F 1F 2|=0.292. Moreover, the measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. As a result, excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1236209
Report Number(s):
SAND-2015-4641J
Journal ID: ISSN 0003-6951; APPLAB; 590731
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 18; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; carrier lifetimes; III-V semiconductors; dark currents; doping; photodetectors

Citation Formats

Olson, B. V., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., Leonhardt, D., Coon, W. T., Fortune, T. R., Cavaliere, M. A., Tauke-Pedretti, A., and Shaner, E. A. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors. United States: N. p., 2015. Web. doi:10.1063/1.4935159.
Olson, B. V., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., Leonhardt, D., Coon, W. T., Fortune, T. R., Cavaliere, M. A., Tauke-Pedretti, A., & Shaner, E. A. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors. United States. doi:10.1063/1.4935159.
Olson, B. V., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., Leonhardt, D., Coon, W. T., Fortune, T. R., Cavaliere, M. A., Tauke-Pedretti, A., and Shaner, E. A. Tue . "Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors". United States. doi:10.1063/1.4935159. https://www.osti.gov/servlets/purl/1236209.
@article{osti_1236209,
title = {Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors},
author = {Olson, B. V. and Kim, J. K. and Kadlec, E. A. and Klem, J. F. and Hawkins, S. D. and Leonhardt, D. and Coon, W. T. and Fortune, T. R. and Cavaliere, M. A. and Tauke-Pedretti, A. and Shaner, E. A.},
abstractNote = {Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs 0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F1F2|=0.292. Moreover, the measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. As a result, excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.},
doi = {10.1063/1.4935159},
journal = {Applied Physics Letters},
number = 18,
volume = 107,
place = {United States},
year = {2015},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Save / Share: