Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

Olson, B. V.; Kim, J. K.; Kadlec, E. A.; Klem, J. F.; Hawkins, S. D.; Leonhardt, D.; Coon, W. T.; Fortune, T. R.; Cavaliere, M. A.; Tauke-Pedretti, A.; Shaner, E. A.

doi:10.1063/1.4935159

Title: Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs_0.91Sb_0.09 alloy nBn photodetectors

Abstract

Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs _0.91Sb_0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F₁F₂|=0.292. Moreover, the measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. As a result, excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.

Authors:

^[1]; Kim, J. K. ^[1]; Kadlec, E. A. ^[1]; Klem, J. F. ^[1]; Hawkins, S. D. ^[1]; Leonhardt, D. ^[1]; Coon, W. T. ^[1]; Fortune, T. R. ^[1]; Cavaliere, M. A. ^[1]; Tauke-Pedretti, A. ^[1]; Shaner, E. A. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Tue Nov 03 00:00:00 EST 2015

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1236209

Report Number(s):: SAND-2015-4641J
Journal ID: ISSN 0003-6951; APPLAB; 590731

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 107; Journal Issue: 18; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; carrier lifetimes; III-V semiconductors; dark currents; doping; photodetectors

Citation Formats


                    Olson, B. V., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., Leonhardt, D., Coon, W. T., Fortune, T. R., Cavaliere, M. A., Tauke-Pedretti, A., and Shaner, E. A. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4935159.

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                    Olson, B. V., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., Leonhardt, D., Coon, W. T., Fortune, T. R., Cavaliere, M. A., Tauke-Pedretti, A., & Shaner, E. A. Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors.  United States.  https://doi.org/10.1063/1.4935159

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                    Olson, B. V., Kim, J. K., Kadlec, E. A., Klem, J. F., Hawkins, S. D., Leonhardt, D., Coon, W. T., Fortune, T. R., Cavaliere, M. A., Tauke-Pedretti, A., and Shaner, E. A. Tue .  
"Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors".  United States.  https://doi.org/10.1063/1.4935159.  https://www.osti.gov/servlets/purl/1236209.

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@article{osti_1236209,

  title        = {Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors},

  author       = {Olson, B. V. and Kim, J. K. and Kadlec, E. A. and Klem, J. F. and Hawkins, S. D. and Leonhardt, D. and Coon, W. T. and Fortune, T. R. and Cavaliere, M. A. and Tauke-Pedretti, A. and Shaner, E. A.},

  abstractNote = {Carrier lifetime and dark current measurements are reported for a mid-wavelength infrared InAs 0.91Sb0.09 alloy nBn photodetector. Minority carrier lifetimes are measured using a non-contact time-resolved microwave technique on unprocessed portions of the nBn wafer and the Auger recombination Bloch function parameter is determined to be |F1F2|=0.292. Moreover, the measured lifetimes are also used to calculate the expected diffusion dark current of the nBn devices and are compared with the experimental dark current measured in processed photodetector pixels from the same wafer. As a result, excellent agreement is found between the two, highlighting the important relationship between lifetimes and diffusion currents in nBn photodetectors.},

  doi          = {10.1063/1.4935159},

  journal      = {Applied Physics Letters},

  number       = 18,

  volume       = 107,

  place        = {United States},

  year         = {Tue Nov 03 00:00:00 EST 2015},

  month        = {Tue Nov 03 00:00:00 EST 2015}

}

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Works referenced in this record:

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Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
journal, August 2012

Olson, B. V.; Shaner, E. A.; Kim, J. K.
Applied Physics Letters, Vol. 101, Issue 9
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Comparison of nBn and nBp mid-wave barrier infrared photodetectors
conference, January 2010

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Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices
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Intensity- and Temperature-Dependent Carrier Recombination in $InAs / In {As}_{1 - x} {S b}_{x}$ Type-II Superlattices
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Works referencing / citing this record:

High operating temperature InAsSb-based mid-infrared focal plane array with a band-aligned compound barrier
journal, January 2020

Deng, Gongrong; Yang, Wenyun; Zhao, Peng
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Improved quantitative circuit model of realistic patch-based nanoantenna-enabled detectors
journal, January 2018

Campione, Salvatore; Warne, Larry K.; Goldflam, Michael D.
Journal of the Optical Society of America B, Vol. 35, Issue 9
DOI: 10.1364/josab.35.002144

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Title: Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

Abstract

Citation Formats

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InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs journal, January 2012

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Title: Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs_0.91Sb_0.09 alloy nBn photodetectors

New concepts in infrared photodetector designs
journal, December 2014

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journal, October 2006

Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe
journal, May 2011

Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
journal, September 1957

Band gap of InAs 1 − x Sb x with native lattice constant
journal, December 2012

MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers
journal, May 2013

InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs
journal, January 2012

Room temperature performance of mid-wavelength infrared InAsSb nBn detectors
journal, July 2014

MWIR InAsSb FPA data and analysis
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Large format 15μm pitch XBn detector
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Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
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Comparison of nBn and nBp mid-wave barrier infrared photodetectors
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