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Title: The role of surface passivation in controlling Ge nanowire faceting

In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.
 [1] ;  [2] ;  [3] ;  [1] ;  [2] ;  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. T.J. Watson Research Center, Yorktown Heights, NY (United States)
  3. Univ. of California, Los Angeles, CA (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 1530-6984; KC0403020
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 15; Journal Issue: 12; Journal ID: ISSN 1530-6984
American Chemical Society
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
77 NANOSCIENCE AND NANOTECHNOLOGY; nanowires; crystal growth; surface passivation; Center for Functional Nanomaterials; in situ; diffusion; transmission electron microscopy
OSTI Identifier: