The role of surface passivation in controlling Ge nanowire faceting

Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

doi:10.1021/acs.nanolett.5b03722

Title: The role of surface passivation in controlling Ge nanowire faceting

Journal Article · Wed Nov 04 23:00:00 EST 2015 · Nano Letters

DOI: https://doi.org/10.1021/acs.nanolett.5b03722 · OSTI ID:1235851

Gamalski, A. D. ^[1]; Tersoff, J. ^[2]; Kodambaka, S. ^[3]; Zakharov, D. N. ^[1]; Ross, F. M. ^[2]; Stach, E. A. ^[1]

Brookhaven National Lab. (BNL), Upton, NY (United States)
T.J. Watson Research Center, Yorktown Heights, NY (United States)
Univ. of California, Los Angeles, CA (United States)

In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

OSTI ID:: 1235851

Report Number(s):: BNL--108610-2015-JA; KC0403020

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 12 Vol. 15; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Direct evidence of 2H hexagonal Si in Si nanowires He, Zhanbing; Maurice, Jean-Luc; Li, Qikai Nanoscale, Vol. 11, Issue 11 https://doi.org/10.1039/c8nr10370d	journal	January 2019
Solution-processed high- k dielectrics for improving the performance of flexible intrinsic Ge nanowire transistors: dielectrics screening, interface engineering and electrical properties Lou, Xun; Zhang, Wenfeng; Xie, Zijian Journal of Physics D: Applied Physics, Vol. 52, Issue 50 https://doi.org/10.1088/1361-6463/ab3fc0	journal	September 2019
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