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Title: Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

Authors:
 [1]; ORCiD logo [1];  [2]; ORCiD logo [2]; ORCiD logo [1];  [1]
  1. School of Electrical Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-8806, USA
  2. Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1228331
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 118 Journal Issue: 2; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Chandra, Nishant, Tracy, Clarence J., Cho, Jeong-Hyun, Picraux, S. T., Hathwar, Raghuraj, and Goodnick, Stephen M. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates. United States: N. p., 2015. Web. doi:10.1063/1.4923407.
Chandra, Nishant, Tracy, Clarence J., Cho, Jeong-Hyun, Picraux, S. T., Hathwar, Raghuraj, & Goodnick, Stephen M. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates. United States. doi:10.1063/1.4923407.
Chandra, Nishant, Tracy, Clarence J., Cho, Jeong-Hyun, Picraux, S. T., Hathwar, Raghuraj, and Goodnick, Stephen M. Wed . "Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates". United States. doi:10.1063/1.4923407.
@article{osti_1228331,
title = {Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates},
author = {Chandra, Nishant and Tracy, Clarence J. and Cho, Jeong-Hyun and Picraux, S. T. and Hathwar, Raghuraj and Goodnick, Stephen M.},
abstractNote = {},
doi = {10.1063/1.4923407},
journal = {Journal of Applied Physics},
number = 2,
volume = 118,
place = {United States},
year = {2015},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4923407

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