Extended antisite defects in tetrahedrally bonded semiconductors
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1226674
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Name: Physical Review B Journal Volume: 92 Journal Issue: 20; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Zawadzki, Paweł, Zakutayev, Andriy, and Lany, Stephan. Extended antisite defects in tetrahedrally bonded semiconductors. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.92.201204.
Zawadzki, Paweł, Zakutayev, Andriy, & Lany, Stephan. Extended antisite defects in tetrahedrally bonded semiconductors. United States. https://doi.org/10.1103/PhysRevB.92.201204
Zawadzki, Paweł, Zakutayev, Andriy, and Lany, Stephan. Fri .
"Extended antisite defects in tetrahedrally bonded semiconductors". United States. https://doi.org/10.1103/PhysRevB.92.201204.
@article{osti_1226674,
title = {Extended antisite defects in tetrahedrally bonded semiconductors},
author = {Zawadzki, Paweł and Zakutayev, Andriy and Lany, Stephan},
abstractNote = {},
doi = {10.1103/PhysRevB.92.201204},
journal = {Physical Review B},
number = 20,
volume = 92,
place = {United States},
year = {Fri Nov 20 00:00:00 EST 2015},
month = {Fri Nov 20 00:00:00 EST 2015}
}
Free Publicly Available Full Text
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https://doi.org/10.1103/PhysRevB.92.201204
https://doi.org/10.1103/PhysRevB.92.201204
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Cited by: 17 works
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