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Title: Extended antisite defects in tetrahedrally bonded semiconductors

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Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
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Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 92 Journal Issue: 20; Journal ID: ISSN 1098-0121
American Physical Society
Country of Publication:
United States

Citation Formats

Zawadzki, Paweł, Zakutayev, Andriy, and Lany, Stephan. Extended antisite defects in tetrahedrally bonded semiconductors. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.92.201204.
Zawadzki, Paweł, Zakutayev, Andriy, & Lany, Stephan. Extended antisite defects in tetrahedrally bonded semiconductors. United States. doi:10.1103/PhysRevB.92.201204.
Zawadzki, Paweł, Zakutayev, Andriy, and Lany, Stephan. Fri . "Extended antisite defects in tetrahedrally bonded semiconductors". United States. doi:10.1103/PhysRevB.92.201204.
title = {Extended antisite defects in tetrahedrally bonded semiconductors},
author = {Zawadzki, Paweł and Zakutayev, Andriy and Lany, Stephan},
abstractNote = {},
doi = {10.1103/PhysRevB.92.201204},
journal = {Physical Review B},
number = 20,
volume = 92,
place = {United States},
year = {2015},
month = {11}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.92.201204

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Cited by: 7 works
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