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Title: ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect

Abstract

The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half maximum (FWHM), and power efficiency (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed little due to the low emission temperature coefficients of 0.022, 0.050, and 0.068 nm/°C for red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. These indicate that ZnCuInS/ZnSe/ZnS QDs are more suitable for downconversion LEDs compared to CdSe QDs.

Authors:
 [1];  [2];  [1];  [3];  [3];  [3];  [3];  [1];  [1];  [4];  [5];  [6]
+ Show Author Affiliations
  1. State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  2. State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China, State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130012, China
  3. State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130012, China
  4. Department of Chemistry and Physics, Louisiana State University, Shreveport, LA 71115, USA
  5. Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
  6. State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China, Department of Chemistry and Physics, Louisiana State University, Shreveport, LA 71115, USA
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1225110
Alternate Identifier(s):
OSTI ID: 1236586
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Published Article
Journal Name:
Journal of Nanomaterials
Additional Journal Information:
Journal Name: Journal of Nanomaterials Journal Volume: 2015; Journal ID: ISSN 1687-4110
Publisher:
Hindawi Publishing Corporation
Country of Publication:
Egypt
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Liu, Wenyan, Zhang, Yu, Ruan, Cheng, Wang, Dan, Zhang, Tieqiang, Feng, Yi, Gao, Wenzhu, Yin, Jingzhi, Wang, Yiding, Riley, Alexis P., Hu, Michael Z., and Yu, William W. ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect. Egypt: N. p., 2015. Web. doi:10.1155/2015/298614.
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Liu, Wenyan, Zhang, Yu, Ruan, Cheng, Wang, Dan, Zhang, Tieqiang, Feng, Yi, Gao, Wenzhu, Yin, Jingzhi, Wang, Yiding, Riley, Alexis P., Hu, Michael Z., & Yu, William W. ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect. Egypt. https://doi.org/10.1155/2015/298614
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Liu, Wenyan, Zhang, Yu, Ruan, Cheng, Wang, Dan, Zhang, Tieqiang, Feng, Yi, Gao, Wenzhu, Yin, Jingzhi, Wang, Yiding, Riley, Alexis P., Hu, Michael Z., and Yu, William W. Thu . "ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect". Egypt. https://doi.org/10.1155/2015/298614.
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@article{osti_1225110,
title = {ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect},
author = {Liu, Wenyan and Zhang, Yu and Ruan, Cheng and Wang, Dan and Zhang, Tieqiang and Feng, Yi and Gao, Wenzhu and Yin, Jingzhi and Wang, Yiding and Riley, Alexis P. and Hu, Michael Z. and Yu, William W.},
abstractNote = {The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half maximum (FWHM), and power efficiency (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed little due to the low emission temperature coefficients of 0.022, 0.050, and 0.068 nm/°C for red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. These indicate that ZnCuInS/ZnSe/ZnS QDs are more suitable for downconversion LEDs compared to CdSe QDs.},
doi = {10.1155/2015/298614},
journal = {Journal of Nanomaterials},
number = ,
volume = 2015,
place = {Egypt},
year = {Thu Jan 01 00:00:00 EST 2015},
month = {Thu Jan 01 00:00:00 EST 2015}
}
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