Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device

Morshed, Muhammad M.; Suja, Mohammad; Zuo, Zheng; Liu, Jianlin

doi:10.1063/1.4902921

Title: Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device

Authors:

Morshed, Muhammad M. ^[1]; Suja, Mohammad ^[1]; Zuo, Zheng ^[1]; Liu, Jianlin ^[1]

Department of Electrical and Computer Engineering, University of California, Riverside, California 92521, USA

Publication Date:: Wed Nov 26 00:00:00 EST 2014

Sponsoring Org.:: USDOE

OSTI Identifier:: 1224323

Grant/Contract Number:: FG02-08ER-46520

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 105 Journal Issue: 21; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Morshed, Muhammad M., Suja, Mohammad, Zuo, Zheng, and Liu, Jianlin. Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device.  United States: N. p., 2014. 
Web.  doi:10.1063/1.4902921.

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                    Morshed, Muhammad M., Suja, Mohammad, Zuo, Zheng, & Liu, Jianlin. Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device.  United States.  https://doi.org/10.1063/1.4902921

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                    Morshed, Muhammad M., Suja, Mohammad, Zuo, Zheng, and Liu, Jianlin. Wed .  
"Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device".  United States.  https://doi.org/10.1063/1.4902921.

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@article{osti_1224323,

  title        = {Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device},

  author       = {Morshed, Muhammad M. and Suja, Mohammad and Zuo, Zheng and Liu, Jianlin},

  abstractNote = {},

  doi          = {10.1063/1.4902921},

  journal      = {Applied Physics Letters},

  number       = 21,

  volume       = 105,

  place        = {United States},

  year         = {Wed Nov 26 00:00:00 EST 2014},

  month        = {Wed Nov 26 00:00:00 EST 2014}

}

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Works referenced in this record:

Demonstration of a spaser-based nanolaser
journal, August 2009

Noginov, M. A.; Zhu, G.; Belgrave, A. M.
Nature, Vol. 460, Issue 7259
DOI: 10.1038/nature08318

Al/Ti contacts to Sb-doped p-type ZnO
journal, July 2007

Mandalapu, L. J.; Xiu, F. X.; Yang, Z.
Journal of Applied Physics, Vol. 102, Issue 2
DOI: 10.1063/1.2759874

Random laser action in ZnO nanorod arrays embedded in ZnO epilayers
journal, April 2004

Yu, S. F.; Yuen, Clement; Lau, S. P.
Applied Physics Letters, Vol. 84, Issue 17
DOI: 10.1063/1.1734681

Impact of Mixture Gas Plasma of N$_{2}$ and O$_{2}$ as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy
journal, August 2011

Kato, Hiroyuki; Yamamuro, Tomofumi; Ogawa, Akio
Applied Physics Express, Vol. 4, Issue 9
DOI: 10.1143/APEX.4.091105

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
journal, January 1996

Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin-ichi
Japanese Journal of Applied Physics, Vol. 35, Issue Part 2, No. 1B, p. L74-L76
DOI: 10.1143/JJAP.35.L74

Directional and controllable edge-emitting ZnO ultraviolet random laser diodes
journal, March 2010

Liang, H. K.; Yu, S. F.; Yang, H. Y.
Applied Physics Letters, Vol. 96, Issue 10
DOI: 10.1063/1.3356221

Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure
journal, March 2012

Kong, Jieying; Chu, Sheng; Zuo, Zheng
Applied Physics A, Vol. 107, Issue 4
DOI: 10.1007/s00339-012-6850-5

Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films
journal, February 2001

Makino, T.; Segawa, Y.; Kawasaki, M.
Applied Physics Letters, Vol. 78, Issue 9
DOI: 10.1063/1.1350632

Speckle-free laser imaging using random laser illumination
journal, April 2012

Redding, Brandon; Choma, Michael A.; Cao, Hui
Nature Photonics, Vol. 6, Issue 6
DOI: 10.1038/nphoton.2012.90

Photoluminescence study of nitrogen-doped p-type Mg x Zn1−x O nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy
journal, June 2014

Morshed, Muhammad M.; Zuo, Zheng; Huang, Jian
Applied Physics A, Vol. 117, Issue 3
DOI: 10.1007/s00339-014-8576-z

Electrically pumped waveguide lasing from ZnO nanowires
journal, July 2011

Chu, Sheng; Wang, Guoping; Zhou, Weihang
Nature Nanotechnology, Vol. 6, Issue 8
DOI: 10.1038/nnano.2011.97

A ZnO/ZnMgO Multiple-Quantum-Well Ultraviolet Random Laser Diode
journal, January 2011

Long, Hao; Fang, Guojia; Li, Songzhan
IEEE Electron Device Letters, Vol. 32, Issue 1
DOI: 10.1109/LED.2010.2089424

Lasing in random media
journal, July 2003

Cao, Hui
Waves in Random Media, Vol. 13, Issue 3
DOI: 10.1088/0959-7174/13/3/201

Plasmon lasers at deep subwavelength scale
journal, August 2009

Oulton, Rupert F.; Sorger, Volker J.; Zentgraf, Thomas
Nature, Vol. 461, Issue 7264
DOI: 10.1038/nature08364

Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates
journal, July 2010

Nakahara, K.; Akasaka, S.; Yuji, H.
Applied Physics Letters, Vol. 97, Issue 1
DOI: 10.1063/1.3459139

Light diffusion with gain and random lasers
journal, October 1996

Wiersma, Diederik S.; Lagendijk, Ad
Physical Review E, Vol. 54, Issue 4
DOI: 10.1103/PhysRevE.54.4256

Electrically pumped wavelength-tunable ultraviolet random lasing from Mg_xZn_1-xO films on Si
journal, January 2010

Tian, Ye; Ma, Xiangyang; Chen, Peiliang
Optics Express, Vol. 18, Issue 10
DOI: 10.1364/OE.18.010668

Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si
journal, January 2009

Ma, Xiangyang; Pan, Jingwei; Chen, Peiliang
Optics Express, Vol. 17, Issue 16
DOI: 10.1364/OE.17.014426

Sb-doped p-ZnO∕Ga-doped n-ZnO homojunction ultraviolet light emitting diodes
journal, April 2008

Chu, S.; Lim, J. H.; Mandalapu, L. J.
Applied Physics Letters, Vol. 92, Issue 15
DOI: 10.1063/1.2908968

ZnO-Based Ultraviolet Photodetectors
journal, September 2010

Liu, Kewei; Sakurai, Makoto; Aono, Masakazu
Sensors, Vol. 10, Issue 9
DOI: 10.3390/s100908604

Metal-Insulator-Semiconductor Photodetectors
journal, September 2010

Lin, Chu-Hsuan; Liu, Chee Wee
Sensors, Vol. 10, Issue 10
DOI: 10.3390/s101008797

Optically pumped lasing of ZnO at room temperature
journal, April 1997

Bagnall, D. M.; Chen, Y. F.; Zhu, Z.
Applied Physics Letters, Vol. 70, Issue 17, p. 2230-2232
DOI: 10.1063/1.118824

Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition
journal, June 2007

Liu, W. F.; Bian, J. M.; Hu, L. Z.
Solid State Communications, Vol. 142, Issue 11
DOI: 10.1016/j.ssc.2007.03.005

The physics and applications of random lasers
journal, May 2008

Wiersma, Diederik S.
Nature Physics, Vol. 4, Issue 5
DOI: 10.1038/nphys971

Evidences of V _O , V _Z _n , and O _i defects as the green luminescence origins in ZnO
journal, December 2013

Lv, Jinpeng; Li, Chundong
Applied Physics Letters, Vol. 103, Issue 23
DOI: 10.1063/1.4844735

Excitonic ultraviolet laser emission at room temperature from naturally made cavity in ZnO nanocrytal thin films
journal, November 1998

Kawasaki, M.; Ohtomo, A.; Ohkubo, I.
Materials Science and Engineering: B, Vol. 56, Issue 2-3
DOI: 10.1016/S0921-5107(98)00248-7

Random nanolasing in the Anderson localized regime
journal, March 2014

Liu, J.; Garcia, P. D.; Ek, S.
Nature Nanotechnology, Vol. 9, Issue 4
DOI: 10.1038/nnano.2014.34

The history and future of semiconductor heterostructures
journal, January 1998

Alferov, Zh. I.
Semiconductors, Vol. 32, Issue 1
DOI: 10.1134/1.1187350

Random laser spectroscopy for nanoscale perturbation sensing
journal, January 2010

Song, Qinghai; Xiao, Shumin; Xu, Zhengbin
Optics Letters, Vol. 35, Issue 15
DOI: 10.1364/OL.35.002624

Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite Mg _x Zn _1-x O Alloys ($x\simeq 0.5$) and Their Application to Solar-Blind Region Photodetectors
journal, April 2003

Takagi, Tsuyoshi; Tanaka, Hiroshi; Fujita, Shizuo
Japanese Journal of Applied Physics, Vol. 42, Issue Part 2, No. 4B
DOI: 10.1143/JJAP.42.L401

UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes
journal, July 2006

Leong, E. S. P.; Yu, S. F.
Advanced Materials, Vol. 18, Issue 13
DOI: 10.1002/adma.200502761

Electrically pumped ultraviolet ZnO diode lasers on Si
journal, November 2008

Chu, Sheng; Olmedo, Mario; Yang, Zheng
Applied Physics Letters, Vol. 93, Issue 18
DOI: 10.1063/1.3012579

Enhanced photoconductivity of ZnO films Co-doped with nitrogen and tellurium
journal, May 2005

Porter, H. L.; Cai, A. L.; Muth, J. F.
Applied Physics Letters, Vol. 86, Issue 21
DOI: 10.1063/1.1923194

Photon Statistics and Coherence in Light Emission from a Random Laser
journal, July 2004

Florescu, Lucia; John, Sajeev
Physical Review Letters, Vol. 93, Issue 1
DOI: 10.1103/PhysRevLett.93.013602

Native point defects in ZnO
journal, October 2007

Janotti, Anderson; Van de Walle, Chris G.
Physical Review B, Vol. 76, Issue 16
DOI: 10.1103/PhysRevB.76.165202

Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO∕p-ZnO:As∕GaAs structure
journal, March 2007

Sun, J. C.; Zhao, J. Z.; Liang, H. W.
Applied Physics Letters, Vol. 90, Issue 12
DOI: 10.1063/1.2716206

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Title: Ultraviolet random lasing from asymmetrically contacted MgZnO metal-semiconductor-metal device

Citation Formats

Demonstration of a spaser-based nanolaser journal, August 2009

Al/Ti contacts to Sb-doped p-type ZnO journal, July 2007

Random laser action in ZnO nanorod arrays embedded in ZnO epilayers journal, April 2004

Impact of Mixture Gas Plasma of N$_{2}$ and O$_{2}$ as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy journal, August 2011

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes journal, January 1996

Directional and controllable edge-emitting ZnO ultraviolet random laser diodes journal, March 2010

Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure journal, March 2012

Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films journal, February 2001

Speckle-free laser imaging using random laser illumination journal, April 2012

Photoluminescence study of nitrogen-doped p-type Mg x Zn1−x O nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy journal, June 2014

Electrically pumped waveguide lasing from ZnO nanowires journal, July 2011

A ZnO/ZnMgO Multiple-Quantum-Well Ultraviolet Random Laser Diode journal, January 2011

Lasing in random media journal, July 2003

Plasmon lasers at deep subwavelength scale journal, August 2009

Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates journal, July 2010

Light diffusion with gain and random lasers journal, October 1996

Electrically pumped wavelength-tunable ultraviolet random lasing from Mg_xZn_1-xO films on Si journal, January 2010

Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si journal, January 2009

Sb-doped p-ZnO∕Ga-doped n-ZnO homojunction ultraviolet light emitting diodes journal, April 2008

ZnO-Based Ultraviolet Photodetectors journal, September 2010

Metal-Insulator-Semiconductor Photodetectors journal, September 2010

Optically pumped lasing of ZnO at room temperature journal, April 1997

Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition journal, June 2007

The physics and applications of random lasers journal, May 2008

Evidences of V O , V Z n , and O i defects as the green luminescence origins in ZnO journal, December 2013

Excitonic ultraviolet laser emission at room temperature from naturally made cavity in ZnO nanocrytal thin films journal, November 1998

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The history and future of semiconductor heterostructures journal, January 1998

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Realization of ultraviolet electroluminescence from ZnO homojunction with n-ZnO∕p-ZnO:As∕GaAs structure journal, March 2007

Demonstration of a spaser-based nanolaser
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journal, April 2004

Impact of Mixture Gas Plasma of N$_{2}$ and O$_{2}$ as the N Source on ZnO-Based Ultraviolet Light-Emitting Diodes Fabricated by Molecular Beam Epitaxy
journal, August 2011

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
journal, January 1996

Directional and controllable edge-emitting ZnO ultraviolet random laser diodes
journal, March 2010

Low-threshold ZnO random lasing in a homojunction diode with embedded double heterostructure
journal, March 2012

Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films
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Speckle-free laser imaging using random laser illumination
journal, April 2012

Photoluminescence study of nitrogen-doped p-type Mg x Zn1−x O nanocrystalline thin film grown by plasma-assisted molecular beam epitaxy
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journal, August 2009

Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates
journal, July 2010

Light diffusion with gain and random lasers
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journal, April 2008

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Optically pumped lasing of ZnO at room temperature
journal, April 1997

Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition
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The physics and applications of random lasers
journal, May 2008

Evidences of V _O , V _Z _n , and O _i defects as the green luminescence origins in ZnO
journal, December 2013

Excitonic ultraviolet laser emission at room temperature from naturally made cavity in ZnO nanocrytal thin films
journal, November 1998

Random nanolasing in the Anderson localized regime
journal, March 2014

The history and future of semiconductor heterostructures
journal, January 1998

Random laser spectroscopy for nanoscale perturbation sensing
journal, January 2010

Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite Mg _x Zn _1-x O Alloys ($x\simeq 0.5$) and Their Application to Solar-Blind Region Photodetectors
journal, April 2003

UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes
journal, July 2006

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journal, November 2008

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journal, May 2005

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journal, July 2004

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journal, October 2007

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journal, March 2007