Carbon p electron ferromagnetism in silicon carbide

Wang, Yutian; Liu, Yu; Wang, Gang; Anwand, Wolfgang; Jenkins, Catherine A.; Arenholz, Elke; Munnik, Frans; Gordan, Ovidiu D.; Salvan, Georgeta; Zahn, Dietrich R. T.; Chen, Xiaolong; Gemming, Sibylle; Helm, Manfred; Zhou, Shengqiang

doi:10.1038/srep08999

Title: Carbon p electron ferromagnetism in silicon carbide

Journal Article · Wed Mar 11 04:00:00 UTC 2015 · Scientific Reports

DOI: https://doi.org/10.1038/srep08999 · OSTI ID:1201546

Wang, Yutian ^[1]; Liu, Yu ^[2]; Wang, Gang ^[3]; Anwand, Wolfgang ^[4]; Jenkins, Catherine A. ^[5]; Arenholz, Elke ^[5]; Munnik, Frans ^[4]; Gordan, Ovidiu D. ^[6]; Salvan, Georgeta ^[6]; Zahn, Dietrich R. T. ^[6]; Chen, Xiaolong ^[3]; Gemming, Sibylle ^[7]; Helm, Manfred ^[1]; Zhou, Shengqiang ^[4]

Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Technische Univ. Dresden, Dresden (Germany)
Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Chinese Academy of Sciences, Beijing (China)
Chinese Academy of Sciences, Beijing (China)
Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Technische Univ. Chemnitz, Chemnitz (Germany)
Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Technische Univ. Chemnitz, Chemnitz (Germany)

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the V_SiV_C divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1201546

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Vol. 5; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Defect-induced magnetism in SiC Zhou, Shengqiang; Chen, Xiaolong Journal of Physics D: Applied Physics, Vol. 52, Issue 39 https://doi.org/10.1088/1361-6463/ab2495	journal	July 2019

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