Pressure induced metallization with absence of structural transition in layered molybdenum diselenide

Zhao, Zhao; Zhang, Haijun; Yuan, Hongtao; Wang, Shibing; Lin, Yu; Zeng, Qiaoshi; Xu, Gang; Liu, Zhenxian; Solanki, G. K.; Patel, K. D.; Cui, Yi; Hwang, Harold Y.; Mao, Wendy L.

doi:10.1038/ncomms8312

Title: Pressure induced metallization with absence of structural transition in layered molybdenum diselenide

Journal Article · Fri Jun 19 00:00:00 EDT 2015 · Nature Communications

DOI: https://doi.org/10.1038/ncomms8312 · OSTI ID:1188813

Zhao, Zhao ^[1]; Zhang, Haijun ^[2]; Yuan, Hongtao ^[3]; Wang, Shibing ^[4]; Lin, Yu ^[1]; Zeng, Qiaoshi ^[5]; Xu, Gang ^[1]; Liu, Zhenxian ^[6]; Solanki, G. K. ^[7]; Patel, K. D. ^[7]; Cui, Yi ^[3]; Hwang, Harold Y. ^[3]; Mao, Wendy L. ^[3]

Stanford Univ., Stanford, CA (United States)
Stanford Univ., Stanford, CA (United States); Nanjing Univ., Nanjing (China)
Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
Carnegie Inst. of Washington, Argonne, IL (United States); Center for High Pressure Science and Technology Advanced Research, Shanghai (China)
Carnegie Inst. of Washington, Argonne, IL (United States)
Sardar Patel University, Gujarat (India)

Layered transition-metal dichalcogenides have emerged as exciting material systems with atomically thin geometries and unique electronic properties. Pressure is a powerful tool for continuously tuning their crystal and electronic structures away from the pristine states. Here, we systematically investigated the pressurized behavior of MoSe₂ up to ~60 GPa using multiple experimental techniques and ab-initio calculations. MoSe₂ evolves from an anisotropic two-dimensional layered network to a three-dimensional structure without a structural transition, which is a complete contrast to MoS₂. The role of the chalcogenide anions in stabilizing different layered patterns is underscored by our layer sliding calculations. MoSe₂ possesses highly tunable transport properties under pressure, determined by the gradual narrowing of its band-gap followed by metallization. The continuous tuning of its electronic structure and band-gap in the range of visible light to infrared suggest possible energy-variable optoelectronics applications in pressurized transition-metal dichalcogenides.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC02-06CH11357; AC02-76SF00515; NA0001974; FG02-99ER45775; AC02-98CH10886

OSTI ID:: 1188813

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 8 Vol. 6; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: ENGLISH

References (88)

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe₂ versus MoS₂ Tongay, Sefaattin; Zhou, Jian; Ataca, Can Nano Letters, Vol. 12, Issue 11, p. 5576-5580 https://doi.org/10.1021/nl302584w	journal	October 2012
Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains Johari, Priya; Shenoy, Vivek B. ACS Nano, Vol. 6, Issue 6 https://doi.org/10.1021/nn301320r	journal	May 2012
Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS ₂ Sheet Hui, Yeung Yu; Liu, Xiaofei; Jie, Wenjing ACS Nano, Vol. 7, Issue 8 https://doi.org/10.1021/nn4024834	journal	July 2013
Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide Nayak, Avinash P.; Bhattacharyya, Swastibrata; Zhu, Jie Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms4731	journal	May 2014
Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2 Yuan, Hongtao; Wang, Xinqiang; Lian, Biao Nature Nanotechnology, Vol. 9, Issue 10 https://doi.org/10.1038/nnano.2014.183	journal	September 2014
Electrochemical tuning of vertically aligned MoS2 nanofilms and its application in improving hydrogen evolution reaction Wang, H.; Lu, Z.; Xu, S. Proceedings of the National Academy of Sciences, Vol. 110, Issue 49 https://doi.org/10.1073/pnas.1316792110	journal	November 2013
Electronic structure investigation of MoS ₂ and MoSe ₂ using angle-resolved photoemission spectroscopy and ab initio band structure studies Mahatha, S. K.; Patel, K. D.; Menon, Krishnakumar S. R. Journal of Physics: Condensed Matter, Vol. 24, Issue 47 https://doi.org/10.1088/0953-8984/24/47/475504	journal	October 2012
Structure change, layer sliding, and metallization in high-pressure MoS 2 Hromadová, Liliana; Martoňák, Roman; Tosatti, Erio Physical Review B, Vol. 87, Issue 14 https://doi.org/10.1103/physrevb.87.144105	journal	April 2013
Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides Xiao, Di; Liu, Gui-Bin; Feng, Wanxiang Physical Review Letters, Vol. 108, Issue 19 https://doi.org/10.1103/physrevlett.108.196802	journal	May 2012
Optical Spectrum of MoS 2 : Many-Body Effects and Diversity of Exciton States Qiu, Diana Y.; da Jornada, Felipe H.; Louie, Steven G. Physical Review Letters, Vol. 111, Issue 21 https://doi.org/10.1103/physrevlett.111.216805	journal	November 2013
Pressure-Induced Metallization of Molybdenum Disulfide Chi, Zhen-Hua; Zhao, Xiao-Miao; Zhang, Haidong Physical Review Letters, Vol. 113, Issue 3 https://doi.org/10.1103/physrevlett.113.036802	journal	July 2014
Diamond anvil cell and high-pressure physical investigations Jayaraman, A. Reviews of Modern Physics, Vol. 55, Issue 1, p. 65-108 https://doi.org/10.1103/revmodphys.55.65	journal	January 1983
Experimental and theoretical approaches Marinakis, S.; Howard, B. J. Queen Mary Research Online (QMRO) https://doi.org/10.17636/01009478	dataset	January 2015
Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping Komsa, Hannu-Pekka; Kotakoski, Jani; Kurasch, Simon arXiv https://doi.org/10.48550/arxiv.1206.4407	text	January 2012
Exploring the complex world of two-dimensional ordering with three modes Mkhonta, Simiso; Elder, Ken; Huang, Zhi-Feng arXiv https://doi.org/10.48550/arxiv.1306.6357	text	January 2013
Strain effects on the spin-orbit induced band structure splittings in monolayer MoS2 and graphene Cheiwchanchamnangij, Tawinan; Lambrecht, Walter R. L.; Song, Yang arXiv https://doi.org/10.48550/arxiv.1308.2733	text	January 2013
Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 Zhang, Yi; Chang, Tay-Rong; Zhou, Bo arXiv https://doi.org/10.48550/arxiv.1401.3386	text	January 2014
Pressure-induced gap closing and metallization of MoSe$_{2}$ and MoTe$_{2}$ Rifliková, Michaela; Martoňák, Roman; Tosatti, Erio arXiv https://doi.org/10.48550/arxiv.1605.05111	text	January 2016
Two Dimensional Atomic Crystals Novoselov, K. S.; Jiang, D.; Booth, T. arXiv https://doi.org/10.48550/arxiv.cond-mat/0503533	text	January 2005
Evidence of a pressure-induced metallization process in monoclinic VO$_2$ Arcangeletti, E.; Baldassarre, L.; Di Castro, D. arXiv https://doi.org/10.48550/arxiv.cond-mat/0611281	text	January 2006
High pressure effect on MoS2 and MoSe2 single crystals grown by CVT method Dave, Madhavi; Vaidya, Rajiv; Patel, S. G. Bulletin of Materials Science, Vol. 27, Issue 2 https://doi.org/10.1007/BF02708507	journal	April 2004
Effect of doping MoSe2 single crystals with rhenium Agarwal, M. K.; Patel, P. D.; Gupta, S. K. Journal of Crystal Growth, Vol. 129, Issue 3-4 https://doi.org/10.1016/0022-0248(93)90491-E	journal	April 1993
X-ray diffraction study of molybdenum disulfide to 38.8GPa Aksoy, Resul; Ma, Yanzhang; Selvi, Emre Journal of Physics and Chemistry of Solids, Vol. 67, Issue 9-10 https://doi.org/10.1016/j.jpcs.2006.05.058	journal	September 2006
X-ray diffraction study of molybdenum diselenide to 35.9GPa Aksoy, Resul; Selvi, Emre; Ma, Yanzhang Journal of Physics and Chemistry of Solids, Vol. 69, Issue 9 https://doi.org/10.1016/j.jpcs.2008.03.020	journal	September 2008
High-pressure X-ray diffraction study of tungsten diselenide Selvi, Emre; Aksoy, Resul; Knudson, Russell Journal of Physics and Chemistry of Solids, Vol. 69, Issue 9 https://doi.org/10.1016/j.jpcs.2008.04.003	journal	September 2008
Pressure-Induced Disordered Substitution Alloy in Sb ₂ Te ₃ Zhao, Jinggeng; Liu, Haozhe; Ehm, Lars Inorganic Chemistry, Vol. 50, Issue 22 https://doi.org/10.1021/ic201731k	journal	November 2011
Pressure Induced Semiconductor-Semimetal Transition in WSe ₂ Liu, Bao; Han, Yonghao; Gao, Chunxiao The Journal of Physical Chemistry C, Vol. 114, Issue 33 https://doi.org/10.1021/jp104143e	journal	July 2010
Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe₂ versus MoS₂ Tongay, Sefaattin; Zhou, Jian; Ataca, Can Nano Letters, Vol. 12, Issue 11, p. 5576-5580 https://doi.org/10.1021/nl302584w	journal	October 2012
Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains Johari, Priya; Shenoy, Vivek B. ACS Nano, Vol. 6, Issue 6 https://doi.org/10.1021/nn301320r	journal	May 2012
Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS ₂ Sheet Hui, Yeung Yu; Liu, Xiaofei; Jie, Wenjing ACS Nano, Vol. 7, Issue 8 https://doi.org/10.1021/nn4024834	journal	July 2013
Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide Nayak, Avinash P.; Bhattacharyya, Swastibrata; Zhu, Jie Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms4731	journal	May 2014
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 Zhang, Yi; Chang, Tay-Rong; Zhou, Bo Nature Nanotechnology, Vol. 9, Issue 2 https://doi.org/10.1038/nnano.2013.277	journal	December 2013
Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2 Yuan, Hongtao; Wang, Xinqiang; Lian, Biao Nature Nanotechnology, Vol. 9, Issue 10 https://doi.org/10.1038/nnano.2014.183	journal	September 2014
Zeeman-type spin splitting controlled by an electric field Yuan, Hongtao; Bahramy, Mohammad Saeed; Morimoto, Kazuhiro Nature Physics, Vol. 9, Issue 9 https://doi.org/10.1038/nphys2691	journal	July 2013
Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets Chen, Ruyi; Cui, Qirui; Liao, Liyang Nature Communications, Vol. 12, Issue 1 https://doi.org/10.1038/s41467-021-23414-3	journal	May 2021
Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect Tatemizo, Nobuyuki; Imada, Saki; Okahara, Kizuna Scientific Reports, Vol. 10, Issue 1 https://doi.org/10.1038/s41598-020-58835-5	journal	February 2020
Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)] Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias The Journal of Chemical Physics, Vol. 124, Issue 21 https://doi.org/10.1063/1.2204597	journal	June 2006
Electronic topological transition and semiconductor-to-metal conversion of Bi ₂ Te ₃ under high pressure Zhang, Junkai; Liu, Cailong; Zhang, Xin Applied Physics Letters, Vol. 103, Issue 5 https://doi.org/10.1063/1.4816758	journal	July 2013
Impurity level evolution and majority carrier-type inversion of Ag ₂ S under extreme compression: Experimental and theoretical approaches Zhang, Junkai; Liu, Cailong; Zhang, Xin Applied Physics Letters, Vol. 103, Issue 8 https://doi.org/10.1063/1.4819160	journal	August 2013
Two-dimensional atomic crystals Novoselov, K. S.; Jiang, D.; Schedin, F. Proceedings of the National Academy of Sciences, Vol. 102, Issue 30, p. 10451-10453 https://doi.org/10.1073/pnas.0502848102	journal	July 2005
On the mechanical behavior of WS2 nanotubes under axial tension and compression Kaplan-Ashiri, I.; Cohen, S. R.; Gartsman, K. Proceedings of the National Academy of Sciences, Vol. 103, Issue 3 https://doi.org/10.1073/pnas.0505640103	journal	January 2006
Electrochemical tuning of vertically aligned MoS2 nanofilms and its application in improving hydrogen evolution reaction Wang, H.; Lu, Z.; Xu, S. Proceedings of the National Academy of Sciences, Vol. 110, Issue 49 https://doi.org/10.1073/pnas.1316792110	journal	November 2013
The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties Wilson, J. A.; Yoffe, A. D. Advances in Physics, Vol. 18, Issue 73 https://doi.org/10.1080/00018736900101307	journal	May 1969
Electronic structure investigation of MoS ₂ and MoSe ₂ using angle-resolved photoemission spectroscopy and ab initio band structure studies Mahatha, S. K.; Patel, K. D.; Menon, Krishnakumar S. R. Journal of Physics: Condensed Matter, Vol. 24, Issue 47 https://doi.org/10.1088/0953-8984/24/47/475504	journal	October 2012
Inhomogeneous Electron Gas Hohenberg, P.; Kohn, W. Physical Review, Vol. 136, Issue 3B, p. B864-B871 https://doi.org/10.1103/PhysRev.136.B864	journal	November 1964
High-pressure Raman spectroscopy in the layered materials 2 H -Mo S 2 , 2 H -Mo Se 2 , and 2 H -Mo Te 2 Sugai, S.; Ueda, T. Physical Review B, Vol. 26, Issue 12 https://doi.org/10.1103/PhysRevB.26.6554	journal	December 1982
Electronic structure of MoSe 2 , MoS 2 , and WSe 2 . I. Band-structure calculations and photoelectron spectroscopy Coehoorn, R.; Haas, C.; Dijkstra, J. Physical Review B, Vol. 35, Issue 12 https://doi.org/10.1103/PhysRevB.35.6195	journal	April 1987
Ab initiomolecular dynamics for liquid metals Kresse, G.; Hafner, J. Physical Review B, Vol. 47, Issue 1, p. 558-561 https://doi.org/10.1103/PhysRevB.47.558	journal	January 1993
Projector augmented-wave method Blöchl, P. E. Physical Review B, Vol. 50, Issue 24, p. 17953-17979 https://doi.org/10.1103/PhysRevB.50.17953	journal	December 1994
From ultrasoft pseudopotentials to the projector augmented-wave method Kresse, G.; Joubert, D. Physical Review B, Vol. 59, Issue 3, p. 1758-1775 https://doi.org/10.1103/PhysRevB.59.1758	journal	January 1999
Resonant Raman scattering at exciton states tuned by pressure and temperature in 2 H -MoS 2 Livneh, Tsachi; Sterer, Eran Physical Review B, Vol. 81, Issue 19 https://doi.org/10.1103/PhysRevB.81.195209	journal	May 2010
Two-dimensional pressure-induced electronic topological transition in Bi 2 Te 3 Polian, Alain; Gauthier, Michel; Souza, Sergio Michielon Physical Review B, Vol. 83, Issue 11 https://doi.org/10.1103/PhysRevB.83.113106	journal	March 2011
High-pressure vibrational and optical study of Bi 2 Te 3 Vilaplana, R.; Gomis, O.; Manjón, F. J. Physical Review B, Vol. 84, Issue 10 https://doi.org/10.1103/PhysRevB.84.104112	journal	September 2011
Lattice dynamics of Sb 2 Te 3 at high pressures Gomis, O.; Vilaplana, R.; Manjón, F. J. Physical Review B, Vol. 84, Issue 17 https://doi.org/10.1103/PhysRevB.84.174305	journal	November 2011
Tunable band gaps in bilayer transition-metal dichalcogenides Ramasubramaniam, Ashwin; Naveh, Doron; Towe, Elias Physical Review B, Vol. 84, Issue 20 https://doi.org/10.1103/PhysRevB.84.205325	journal	November 2011
Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H- M X 2 semiconductors ( M = Mo, W; X = S, Se, Te) Yun, Won Seok; Han, S. W.; Hong, Soon Cheol Physical Review B, Vol. 85, Issue 3 https://doi.org/10.1103/PhysRevB.85.033305	journal	January 2012
Trapping of three-dimensional electrons and transition to two-dimensional transport in the three-dimensional topological insulator Bi 2 Se 3 under high pressure Segura, A.; Panchal, V.; Sánchez-Royo, J. F. Physical Review B, Vol. 85, Issue 19 https://doi.org/10.1103/PhysRevB.85.195139	journal	May 2012
Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides Bhattacharyya, Swastibrata; Singh, Abhishek K. Physical Review B, Vol. 86, Issue 7 https://doi.org/10.1103/PhysRevB.86.075454	journal	August 2012
Effects of strain on band structure and effective masses in MoS 2 Peelaers, H.; Van de Walle, C. G. Physical Review B, Vol. 86, Issue 24 https://doi.org/10.1103/PhysRevB.86.241401	journal	December 2012
Structure change, layer sliding, and metallization in high-pressure MoS 2 Hromadová, Liliana; Martoňák, Roman; Tosatti, Erio Physical Review B, Vol. 87, Issue 14 https://doi.org/10.1103/PhysRevB.87.144105	journal	April 2013
Pressure-induced structural transitions and metallization in Ag 2 Te Zhao, Zhao; Wang, Shibing; Zhang, Haijun Physical Review B, Vol. 88, Issue 2 https://doi.org/10.1103/PhysRevB.88.024120	journal	July 2013
Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS 2 Zhu, C. R.; Wang, G.; Liu, B. L. Physical Review B, Vol. 88, Issue 12 https://doi.org/10.1103/PhysRevB.88.121301	journal	September 2013
Strain effects on the spin-orbit-induced band structure splittings in monolayer MoS 2 and graphene Cheiwchanchamnangij, Tawinan; Lambrecht, Walter R. L.; Song, Yang Physical Review B, Vol. 88, Issue 15 https://doi.org/10.1103/PhysRevB.88.155404	journal	October 2013
Orbital analysis of electronic structure and phonon dispersion in MoS 2 , MoSe 2 , WS 2 , and WSe 2 monolayers under strain Chang, Chung-Huai; Fan, Xiaofeng; Lin, Shi-Hsin Physical Review B, Vol. 88, Issue 19 https://doi.org/10.1103/PhysRevB.88.195420	journal	November 2013
Tuning the crystal structure and electronic states of Ag 2 Se : Structural transitions and metallization under pressure Zhao, Zhao; Wang, Shibing; Oganov, Artem R. Physical Review B, Vol. 89, Issue 18 https://doi.org/10.1103/PhysRevB.89.180102	journal	May 2014
Pressure-induced gap closing and metallization of Mo Se 2 and Mo Te 2 Rifliková, Michaela; Martoňák, Roman; Tosatti, Erio Physical Review B, Vol. 90, Issue 3 https://doi.org/10.1103/PhysRevB.90.035108	journal	July 2014
Atomically Thin MoS2 A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides Xiao, Di; Liu, Gui-Bin; Feng, Wanxiang Physical Review Letters, Vol. 108, Issue 19 https://doi.org/10.1103/PhysRevLett.108.196802	journal	May 2012
Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping Komsa, Hannu-Pekka; Kotakoski, Jani; Kurasch, Simon Physical Review Letters, Vol. 109, Issue 3 https://doi.org/10.1103/PhysRevLett.109.035503	journal	July 2012
Unconventional Quantum Hall Effect and Tunable Spin Hall Effect in Dirac Materials: Application to an Isolated MoS 2 Trilayer Li, Xiao; Zhang, Fan; Niu, Qian Physical Review Letters, Vol. 110, Issue 6 https://doi.org/10.1103/PhysRevLett.110.066803	journal	February 2013
Sharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition from Band to Topological Insulator in Sb 2 Se 3 Bera, Achintya; Pal, Koushik; Muthu, D. V. S. Physical Review Letters, Vol. 110, Issue 10 https://doi.org/10.1103/PhysRevLett.110.107401	journal	March 2013
Controlling Ferromagnetic Easy Axis in a Layered MoS 2 Single Crystal Han, Sang Wook; Hwang, Young Hun; Kim, Seon-Ho Physical Review Letters, Vol. 110, Issue 24 https://doi.org/10.1103/PhysRevLett.110.247201	journal	June 2013
Exploring the Complex World of Two-Dimensional Ordering with Three Modes Mkhonta, S. K.; Elder, K. R.; Huang, Zhi-Feng Physical Review Letters, Vol. 111, Issue 3 https://doi.org/10.1103/PhysRevLett.111.035501	journal	July 2013
Direct Measurement of the Thickness-Dependent Electronic Band Structure of MoS 2 Using Angle-Resolved Photoemission Spectroscopy Jin, Wencan; Yeh, Po-Chun; Zaki, Nader Physical Review Letters, Vol. 111, Issue 10 https://doi.org/10.1103/PhysRevLett.111.106801	journal	September 2013
Spin-Orbit Splitting in Single-Layer MoS 2 Revealed by Triply Resonant Raman Scattering Sun, Linfeng; Yan, Jiaxu; Zhan, Da Physical Review Letters, Vol. 111, Issue 12 https://doi.org/10.1103/PhysRevLett.111.126801	journal	September 2013
Optical Spectrum of MoS 2 : Many-Body Effects and Diversity of Exciton States Qiu, Diana Y.; da Jornada, Felipe H.; Louie, Steven G. Physical Review Letters, Vol. 111, Issue 21 https://doi.org/10.1103/PhysRevLett.111.216805	journal	November 2013
Pressure-Induced Metallization of Molybdenum Disulfide Chi, Zhen-Hua; Zhao, Xiao-Miao; Zhang, Haidong Physical Review Letters, Vol. 113, Issue 3 https://doi.org/10.1103/PhysRevLett.113.036802	journal	July 2014
Evidence of a Pressure-Induced Metallization Process in Monoclinic VO 2 Arcangeletti, E.; Baldassarre, L.; Di Castro, D. Physical Review Letters, Vol. 98, Issue 19 https://doi.org/10.1103/PhysRevLett.98.196406	journal	May 2007
Diamond anvil cell and high-pressure physical investigations Jayaraman, A. Reviews of Modern Physics, Vol. 55, Issue 1, p. 65-108 https://doi.org/10.1103/RevModPhys.55.65	journal	January 1983
High-pressure phases of group-IV, III–V, and II–VI compounds Mujica, A.; Rubio, Angel; Muñoz, A. Reviews of Modern Physics, Vol. 75, Issue 3 https://doi.org/10.1103/RevModPhys.75.863	journal	July 2003
Inhomogeneous Electron Gas Rajagopal, A. K.; Callaway, J. Physical Review B, Vol. 7, Issue 5 https://doi.org/10.1103/physrevb.7.1912	journal	March 1973
EXPGUI , a graphical user interface for GSAS Toby, Brian H. Journal of Applied Crystallography, Vol. 34, Issue 2 https://doi.org/10.1107/S0021889801002242	journal	April 2001
The crystal structure of MoSe₂ James, P. B.; Lavik, M. T. Acta Crystallographica, Vol. 16, Issue 11, p. 1183-1183 https://doi.org/10.1107/S0365110X6300311X	journal	November 1963
Structural stability of WS ₂ under high pressure Bandaru, Nirup; Kumar, Ravhi S.; Baker, Jason International Journal of Modern Physics B, Vol. 28, Issue 25 https://doi.org/10.1142/S0217979214501689	journal	September 2014
Semiconductor-metal transition in semiconducting bilayer sheets of transition metal dichalcogenides Bhattacharyya, Swastibrata; Singh, Abhishek K. arXiv https://doi.org/10.48550/arxiv.1203.6820	text	January 2012
Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping Komsa, Hannu-Pekka; Kotakoski, Jani; Kurasch, Simon arXiv https://doi.org/10.48550/arxiv.1206.4407	text	January 2012
Two Dimensional Atomic Crystals Novoselov, K. S.; Jiang, D.; Booth, T. arXiv https://doi.org/10.48550/arxiv.cond-mat/0503533	text	January 2005

Cited By (36)

Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures Hu, Xiaohui; Kou, Liangzhi; Sun, Litao Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep31122	journal	August 2016
Significant improvement in Mn2O3 transition metal oxide electrical conductivity via high pressure Hong, Fang; Yue, Binbin; Hirao, Naohisa Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/srep44078	journal	March 2017
Strain Relaxation of Monolayer WS ₂ on Plastic Substrate Zhang, Qianhui; Chang, Zhenyue; Xu, Guanzhong Advanced Functional Materials, Vol. 26, Issue 47 https://doi.org/10.1002/adfm.201603064	journal	October 2016
Modulation of Metal and Insulator States in 2D Ferromagnetic VS ₂ by van der Waals Interaction Engineering Guo, Yuqiao; Deng, Haitao; Sun, Xu Advanced Materials, Vol. 29, Issue 29 https://doi.org/10.1002/adma.201700715	journal	June 2017
Thickness-Dependent Structural Stability and Anisotropy of Black Phosphorus Li, Qian; Huang, Hao; Chen, Zhongwei Advanced Electronic Materials, Vol. 5, Issue 3 https://doi.org/10.1002/aelm.201800712	journal	January 2019
Molybdenum Selenide Electrocatalysts for Electrochemical Hydrogen Evolution Reaction Zhang, Kaili; Li, Yahao; Deng, Shengjue ChemElectroChem, Vol. 6, Issue 14 https://doi.org/10.1002/celc.201900448	journal	June 2019
Hidden orbital polarization in diamond, silicon, germanium, gallium arsenide and layered materials Ryoo, Ji Hoon; Park, Cheol-Hwan NPG Asia Materials, Vol. 9, Issue 5 https://doi.org/10.1038/am.2017.67	journal	May 2017
Pressure-induced metallization and superconducting phase in ReS 2 Zhou, Dawei; Zhou, Yonghui; Pu, Chunying npj Quantum Materials, Vol. 2, Issue 1 https://doi.org/10.1038/s41535-017-0023-x	journal	March 2017
Switching 2D magnetic states via pressure tuning of layer stacking Song, Tiancheng; Fei, Zaiyao; Yankowitz, Matthew Nature Materials, Vol. 18, Issue 12 https://doi.org/10.1038/s41563-019-0505-2	journal	October 2019
Pressure dependence of direct optical transitions in ReS2 and ReSe2 Oliva, Robert; Laurien, Magdalena; Dybala, Filip npj 2D Materials and Applications, Vol. 3, Issue 1 https://doi.org/10.1038/s41699-019-0102-x	journal	May 2019
Stacking orders induced direct band gap in bilayer MoSe2-WSe2 lateral heterostructures Hu, Xiaohui; Kou, Liangzhi; Sun, Litao Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep31122	journal	August 2016
Thermal conductivity of monolayer MoS ₂ , MoSe ₂ , and WS ₂ : interplay of mass effect, interatomic bonding and anharmonicity Peng, Bo; Zhang, Hao; Shao, Hezhu RSC Advances, Vol. 6, Issue 7 https://doi.org/10.1039/c5ra19747c	journal	January 2016
Phase evolution of lithium intercalation dynamics in 2H-MoS ₂ Xia, Juan; Wang, Jin; Chao, Dongliang Nanoscale, Vol. 9, Issue 22 https://doi.org/10.1039/c7nr02028g	journal	January 2017
A vacancy-driven phase transition in MoX ₂ (X: S, Se and Te) nanoscrolls Hwang, Da Young; Choi, Kyoung Hwan; Suh, Dong Hack Nanoscale, Vol. 10, Issue 17 https://doi.org/10.1039/c7nr08634b	journal	January 2018
Effect of Y doping on high-pressure behavior of Ag ₂ S nanocrystals Wang, Pan; Zhao, Rui; Wu, Lixin RSC Advances, Vol. 7, Issue 56 https://doi.org/10.1039/c7ra05327d	journal	January 2017
Spin polarization and spin channel reversal in graphitic carbon nitrides on top of an α-Fe ₂ O ₃ (0001) surface Jiang, Jiawei; Wang, Xiaocha; Mi, Wenbo Physical Chemistry Chemical Physics, Vol. 20, Issue 35 https://doi.org/10.1039/c8cp04223c	journal	January 2018
Pressure-induced metallization in MoSe ₂ under different pressure conditions Yang, Linfei; Dai, Lidong; Li, Heping RSC Advances, Vol. 9, Issue 10 https://doi.org/10.1039/c8ra09441a	journal	January 2019
Giant enhancements in electronic transport and photoelectric properties of bismuth oxysulfide by pressure-driven 2D–3D structural reconstruction Zhang, Ganghua; Zhang, Qian; Hu, Qingyang Journal of Materials Chemistry A, Vol. 7, Issue 8 https://doi.org/10.1039/c8ta11168e	journal	January 2019
Magnetic proximity effect induced spin-dependent electronic structure in two-dimensional SnO by half-metallic monolayer CrN ferromagnet Nie, Kai; Wang, Xiaocha; Mi, Wenbo Physical Chemistry Chemical Physics, Vol. 21, Issue 13 https://doi.org/10.1039/c9cp00690g	journal	January 2019
Tunable valley splitting and an anomalous valley Hall effect in hole-doped WS ₂ by proximity coupling with a ferromagnetic MnO ₂ monolayer Zhou, Baozeng; Li, Zheng; Wang, Jiaming Nanoscale, Vol. 11, Issue 28 https://doi.org/10.1039/c9nr03315g	journal	January 2019
Recent progress of TMD nanomaterials: phase transitions and applications Huang, H. H.; Fan, Xiaofeng; Singh, David J. Nanoscale, Vol. 12, Issue 3 https://doi.org/10.1039/c9nr08313h	journal	January 2020
Tunable Schottky barrier in van der Waals heterostructures of graphene and g-GaN Sun, Minglei; Chou, Jyh-Pin; Ren, Qingqiang Applied Physics Letters, Vol. 110, Issue 17 https://doi.org/10.1063/1.4982690	journal	April 2017
Synthesis and Raman spectroscopy of a layered SiS ₂ phase at high pressures Wang, Yu; Jiang, Shu-Qing; Goncharov, Alexander F. The Journal of Chemical Physics, Vol. 148, Issue 1 https://doi.org/10.1063/1.5011333	journal	January 2018
Deviatoric stresses promoted metallization in rhenium disulfide Zhuang, Yukai; Dai, Lidong; Li, Heping Journal of Physics D: Applied Physics, Vol. 51, Issue 16 https://doi.org/10.1088/1361-6463/aab5a7	journal	March 2018
Structural, vibrational and electrical properties of type-II Dirac semimetal PtSe ₂ under high pressure An, Chao; Chen, Xuliang; Zhou, Yonghui Journal of Physics: Condensed Matter, Vol. 31, Issue 41 https://doi.org/10.1088/1361-648x/ab315e	journal	July 2019
Large Valley Splitting in van der Waals Heterostructures with Type-III Band Alignment Li, Qianze; Chen, Ke-Qiu; Tang, Li-Ming Physical Review Applied, Vol. 13, Issue 1 https://doi.org/10.1103/physrevapplied.13.014064	journal	January 2020
Realization of larger band gap opening of graphene and type-I band alignment with BN intercalation layer in graphene/ M X 2 heterojunctions Gao, Qiang; Li, Xueping; Li, Meng Physical Review B, Vol. 100, Issue 11 https://doi.org/10.1103/physrevb.100.115439	journal	September 2019
First-principles study of the thermodynamic and vibrational properties of ReS 2 under pressure Sheremetyeva, Natalya; Tristant, Damien; Yoshimura, Anthony Physical Review B, Vol. 100, Issue 21 https://doi.org/10.1103/physrevb.100.214101	journal	December 2019
Large valley splitting in monolayer WS 2 by proximity coupling to an insulating antiferromagnetic substrate Xu, Lei; Yang, Ming; Shen, Lei Physical Review B, Vol. 97, Issue 4 https://doi.org/10.1103/physrevb.97.041405	journal	January 2018
Structural, vibrational, and electrical properties of 1 T − TiT e 2 under hydrostatic pressure: Experiments and theory Rajaji, V.; Dutta, Utpal; Sreeparvathy, P. C. Physical Review B, Vol. 97, Issue 8 https://doi.org/10.1103/physrevb.97.085107	journal	February 2018
Pressure induced band inversion, electronic and structural phase transitions in InTe: A combined experimental and theoretical study Rajaji, V.; Pal, Koushik; Sarma, Saurav Ch. Physical Review B, Vol. 97, Issue 15 https://doi.org/10.1103/physrevb.97.155158	journal	April 2018
Pressure-induced evolution of structural and electronic properties in TiT e 2 Zhou, Yonghui; Chen, Chunhua; Zhou, Ying Physical Review B, Vol. 99, Issue 12 https://doi.org/10.1103/physrevb.99.125104	journal	March 2019
Vibrational and dielectric properties of monolayer transition metal dichalcogenides Pike, Nicholas A.; Dewandre, Antoine; Van Troeye, Benoit Physical Review Materials, Vol. 3, Issue 7 https://doi.org/10.1103/physrevmaterials.3.074009	journal	July 2019
On the Stability and Electronic Structure of Transition-Metal Dichalcogenide Monolayer Alloys Mo1−xXxS2−ySey with X = W, Nb Kuc, Agnieszka; Heine, Thomas Electronics, Vol. 5, Issue 4 https://doi.org/10.3390/electronics5010001	journal	December 2015
Thermal conductivity of monolayer MoS2, MoSe2, and WS2: Interplay of mass effect, interatomic bonding and anharmonicity Peng, Bo; Zhang, Hao; Shao, Hezhu arXiv https://doi.org/10.48550/arxiv.1509.01391	text	January 2015
Pressure dependence of direct optical transitions in ReS2 and ReSe2 Oliva, R.; Laurien, M.; Dybala, F. arXiv https://doi.org/10.48550/arxiv.1812.02995	text	January 2018

Similar Records

Charge transfer in transition metal dichalcogenide alloy heterostructures

Journal Article · Mon Feb 17 23:00:00 EST 2025 · Applied Physics Letters · OSTI ID:2551844

Ren, Fangying; He, Dawei; Zhang, Xiaoxian; +7 more

Spatial Mapping of Thermal Boundary Conductance at Metal–Molybdenum Diselenide Interfaces

Journal Article · Thu Mar 21 00:00:00 EDT 2019 · ACS Applied Materials and Interfaces · OSTI ID:1607047

Brown, David B.; Shen, Wenqing; Li, Xufan; +3 more

Pulsed electrodeposition and characterization of molybdenum diselenide thin film

Journal Article · Mon Jan 03 23:00:00 EST 2005 · Materials Research Bulletin · OSTI ID:20883096

Delphine, S Mary; Jayachandran, M; Sanjeeviraja, C

Related Subjects

36 MATERIALS SCIENCE
condensed matter
materials science
physical sciences

Title: Pressure induced metallization with absence of structural transition in layered molybdenum diselenide

Citation Formats

References (88)

Cited By (36)

Similar Records

Related Subjects