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Title: Fractional quantum Hall effect at Landau level filling ν = 4/11

In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance R xx and a quantized Hall resistance R xy, within 1% of the expected value of h/(4/11)e 2, were observed. The temperature dependence of the R xx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν = 3/8 and 5/13.
Authors:
 [1] ;  [2] ;  [2] ;  [2] ;  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Princeton Univ., Princeton, NJ (United States)
Publication Date:
Report Number(s):
SAND-2014-20014J
Journal ID: ISSN 1098-0121; PRBMDO; 547344; TRN: US1600810
Grant/Contract Number:
AC04-94AL85000; AC04–94AL85000
Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 91; Journal Issue: 4; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
OSTI Identifier:
1184984
Alternate Identifier(s):
OSTI ID: 1181427

Pan, W., Baldwin, K. W., West, K. W., Pfeiffer, L. N., and Tsui, D. C.. Fractional quantum Hall effect at Landau level filling ν = 4/11. United States: N. p., Web. doi:10.1103/PhysRevB.91.041301.
Pan, W., Baldwin, K. W., West, K. W., Pfeiffer, L. N., & Tsui, D. C.. Fractional quantum Hall effect at Landau level filling ν = 4/11. United States. doi:10.1103/PhysRevB.91.041301.
Pan, W., Baldwin, K. W., West, K. W., Pfeiffer, L. N., and Tsui, D. C.. 2015. "Fractional quantum Hall effect at Landau level filling ν = 4/11". United States. doi:10.1103/PhysRevB.91.041301. https://www.osti.gov/servlets/purl/1184984.
@article{osti_1184984,
title = {Fractional quantum Hall effect at Landau level filling ν = 4/11},
author = {Pan, W. and Baldwin, K. W. and West, K. W. and Pfeiffer, L. N. and Tsui, D. C.},
abstractNote = {In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν = 3/8 and 5/13.},
doi = {10.1103/PhysRevB.91.041301},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 4,
volume = 91,
place = {United States},
year = {2015},
month = {1}
}