Fractional quantum Hall effect at Landau level filling ν = 4/11
Abstract
In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν = 3/8 and 5/13.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Princeton Univ., Princeton, NJ (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1184984
- Alternate Identifier(s):
- OSTI ID: 1181427
- Report Number(s):
- SAND-2014-20014J
Journal ID: ISSN 1098-0121; PRBMDO; 547344; TRN: US1600810
- Grant/Contract Number:
- AC04-94AL85000; AC04–94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Volume: 91; Journal Issue: 4; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Citation Formats
Pan, W., Baldwin, K. W., West, K. W., Pfeiffer, L. N., and Tsui, D. C. Fractional quantum Hall effect at Landau level filling ν = 4/11. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.91.041301.
Pan, W., Baldwin, K. W., West, K. W., Pfeiffer, L. N., & Tsui, D. C. Fractional quantum Hall effect at Landau level filling ν = 4/11. United States. https://doi.org/10.1103/PhysRevB.91.041301
Pan, W., Baldwin, K. W., West, K. W., Pfeiffer, L. N., and Tsui, D. C. Fri .
"Fractional quantum Hall effect at Landau level filling ν = 4/11". United States. https://doi.org/10.1103/PhysRevB.91.041301. https://www.osti.gov/servlets/purl/1184984.
@article{osti_1184984,
title = {Fractional quantum Hall effect at Landau level filling ν = 4/11},
author = {Pan, W. and Baldwin, K. W. and West, K. W. and Pfeiffer, L. N. and Tsui, D. C.},
abstractNote = {In this study, we report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling ν = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at ν = 3/8 and 5/13.},
doi = {10.1103/PhysRevB.91.041301},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 4,
volume = 91,
place = {United States},
year = {Fri Jan 09 00:00:00 EST 2015},
month = {Fri Jan 09 00:00:00 EST 2015}
}
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Works referencing / citing this record:
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