Toward reversing Joule heating with a phonon-absorbing heterobarrier
Abstract
Using a graded heterobarrier placed along an electron channel, phonons emitted in Joule heating are recycled in situ by increasing the entropy of phonon-absorbing electrons. The asymmetric electric potential distribution created by alloy grading separates the phonon absorption and emission regions, and emission in the larger effective-mass region causes momentum relaxation with smaller electron kinetic energy loss. These lead to smaller overall phonon emission and simultaneous potential-gain and self-cooling effects. Larger potential is gained with lower current and higher optical-phonon temperature. The self-consistent Monte Carlo simulations complying with the lateral momentum conservation combined with the entropy analysis are applied to a GaAs:Al electron channel with a graded heterobarrier, and under ideal lateral thermal isolation from surroundings, the phonon recycling efficiency reaches 25% of the reversible limit at 350 K, and it increases with temperature. In conclusion, the lateral momentum contributes to the transmission across the barrier, so partially nonconserving lateral momentum electron scattering (rough interface) can improve efficiency.
- Authors:
-
- Univ. of Tennessee, Knoxville, TN (United States)
- Univ. of Michigan, Ann Arbor, MI (United States)
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR)
- OSTI Identifier:
- 1370116
- Alternate Identifier(s):
- OSTI ID: 1181577
- Grant/Contract Number:
- SC0000957; CBET 1332807; AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Volume: 91; Journal Issue: 8; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING
Citation Formats
Shin, Seungha, and Kaviany, Massoud. Toward reversing Joule heating with a phonon-absorbing heterobarrier. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.91.085301.
Shin, Seungha, & Kaviany, Massoud. Toward reversing Joule heating with a phonon-absorbing heterobarrier. United States. https://doi.org/10.1103/PhysRevB.91.085301
Shin, Seungha, and Kaviany, Massoud. Mon .
"Toward reversing Joule heating with a phonon-absorbing heterobarrier". United States. https://doi.org/10.1103/PhysRevB.91.085301. https://www.osti.gov/servlets/purl/1370116.
@article{osti_1370116,
title = {Toward reversing Joule heating with a phonon-absorbing heterobarrier},
author = {Shin, Seungha and Kaviany, Massoud},
abstractNote = {Using a graded heterobarrier placed along an electron channel, phonons emitted in Joule heating are recycled in situ by increasing the entropy of phonon-absorbing electrons. The asymmetric electric potential distribution created by alloy grading separates the phonon absorption and emission regions, and emission in the larger effective-mass region causes momentum relaxation with smaller electron kinetic energy loss. These lead to smaller overall phonon emission and simultaneous potential-gain and self-cooling effects. Larger potential is gained with lower current and higher optical-phonon temperature. The self-consistent Monte Carlo simulations complying with the lateral momentum conservation combined with the entropy analysis are applied to a GaAs:Al electron channel with a graded heterobarrier, and under ideal lateral thermal isolation from surroundings, the phonon recycling efficiency reaches 25% of the reversible limit at 350 K, and it increases with temperature. In conclusion, the lateral momentum contributes to the transmission across the barrier, so partially nonconserving lateral momentum electron scattering (rough interface) can improve efficiency.},
doi = {10.1103/PhysRevB.91.085301},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 8,
volume = 91,
place = {United States},
year = {Mon Feb 02 00:00:00 EST 2015},
month = {Mon Feb 02 00:00:00 EST 2015}
}
Web of Science
Works referenced in this record:
Semiconducting and other major properties of gallium arsenide
journal, October 1982
- Blakemore, J. S.
- Journal of Applied Physics, Vol. 53, Issue 10
Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition
journal, March 1993
- Yang, Kyounghoon; East, Jack R.; Haddad, George I.
- Solid-State Electronics, Vol. 36, Issue 3
Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface
journal, April 1990
- Horio, K.; Yanai, H.
- IEEE Transactions on Electron Devices, Vol. 37, Issue 4
Thermoelectric transport perpendicular to thin-film heterostructures calculated using the Monte Carlo technique
journal, November 2006
- Zebarjadi, Mona; Shakouri, Ali; Esfarjani, Keivan
- Physical Review B, Vol. 74, Issue 19
The Physics of Phonons
journal, December 1991
- Srivastava, G. P.; Kresin, Vladimir
- Physics Today, Vol. 44, Issue 12
Heterobarrier for converting hot-phonon energy to electric potential
journal, February 2013
- Shin, Seungha; Melnick, Corey; Kaviany, Massoud
- Physical Review B, Vol. 87, Issue 7
Improved Thermoelectric Power Factor in Metal-Based Superlattices
journal, March 2004
- Vashaee, Daryoosh; Shakouri, Ali
- Physical Review Letters, Vol. 92, Issue 10
Nonequilibrium phonon effect on time-dependent relaxation of hot electrons in semiconductor heterojunctions
journal, January 1987
- Cai, W.; Marchetti, M.; Lax, M.
- Physical Review B, Vol. 35, Issue 3
Monte Carlo study of electron heating and enhanced thermionic emission by hot phonons in heterolayers
journal, April 1988
- Kim, Kiwook; Hess, Karl; Capasso, Federico
- Applied Physics Letters, Vol. 52, Issue 14
Nonequilibrium optical phonon generation by steady-state electron transport in quantum-cascade lasers
journal, June 2002
- Spagnolo, Vincenzo; Scamarcio, Gaetano; Troccoli, Mariano
- Applied Physics Letters, Vol. 80, Issue 23
Entropy production in hot-phonon energy conversion to electric potential
journal, August 2013
- Shin, Seungha; Kaviany, Massoud
- Journal of Applied Physics, Vol. 114, Issue 8
On momentum conservation and thermionic emission cooling
journal, March 2010
- Kim, Raseong; Jeong, Changwook; Lundstrom, Mark S.
- Journal of Applied Physics, Vol. 107, Issue 5
Transport Measurements Across a Tunable Potential Barrier in Graphene
journal, June 2007
- Huard, B.; Sulpizio, J. A.; Stander, N.
- Physical Review Letters, Vol. 98, Issue 23
GaAs, AlAs, and Al x Ga 1− x As: Material parameters for use in research and device applications
journal, August 1985
- Adachi, Sadao
- Journal of Applied Physics, Vol. 58, Issue 3
Minimizing Heat Generation in Solid-State Lasers
journal, July 2010
- Bowman, Steven R.; O'Connor, Shawn P.; Biswal, Subrat
- IEEE Journal of Quantum Electronics, Vol. 46, Issue 7
Transport Properties of GaAs
journal, October 1968
- Ruch, J. G.; Kino, G. S.
- Physical Review, Vol. 174, Issue 3
Gallium arsenide thermal conductivity and optical phonon relaxation times from first-principles calculations
journal, January 2013
- Luo, Tengfei; Garg, Jivtesh; Shiomi, Junichiro
- EPL (Europhysics Letters), Vol. 101, Issue 1
Hot-phonon temperature and lifetime in biased 4H-SiC
journal, December 2004
- Matulionis, A.; Liberis, J.; Matulionienė, I.
- Journal of Applied Physics, Vol. 96, Issue 11
Carrier transport across heterojunction interfaces
journal, March 1979
- Wu, C. M.; Yang, E. S.
- Solid-State Electronics, Vol. 22, Issue 3
Electron drift velocity in n-GaAs at high electric fields
journal, March 1977
- Houston, P. A.; Evans, A. G. R.
- Solid-State Electronics, Vol. 20, Issue 3
Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions
journal, August 2002
- Lee, Kyu-Seok Lee; Yoon, Doo-Hyeb Yoon; Bae, Sung-Bum Bae
- ETRI Journal, Vol. 24, Issue 4
As intervalley scattering rates from field-assisted photoemission spectroscopy
journal, February 1995
- Parker, T. R.; Phillips, C. C.; May, P. G.
- Physical Review B, Vol. 51, Issue 7
Monte Carlo simulation of scattering-induced negative differential resistance in AlGaAs/GaAs quantum wells
journal, June 1986
- Al-Mudares, M. A. R.; Ridley, B. K.
- Journal of Physics C: Solid State Physics, Vol. 19, Issue 17
Thermodynamics of radiation-balanced lasing
journal, January 2003
- Mungan, Carl E.
- Journal of the Optical Society of America B, Vol. 20, Issue 5
Enhanced solid-state thermionic emission in nonplanar heterostructures
journal, January 2006
- Bian, Zhixi; Shakouri, Ali
- Applied Physics Letters, Vol. 88, Issue 1
Determination of the conduction‐band offset of a single AlGaAs barrier layer using deep level transient spectroscopy
journal, May 1993
- Zhu, Q. S.; Mou, S. M.; Zhou, X. C.
- Applied Physics Letters, Vol. 62, Issue 22
Works referencing / citing this record:
From thermoelectricity to phonoelectricity
journal, June 2019
- Melnick, Corey; Kaviany, Massoud
- Applied Physics Reviews, Vol. 6, Issue 2