DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Toward reversing Joule heating with a phonon-absorbing heterobarrier

Abstract

Using a graded heterobarrier placed along an electron channel, phonons emitted in Joule heating are recycled in situ by increasing the entropy of phonon-absorbing electrons. The asymmetric electric potential distribution created by alloy grading separates the phonon absorption and emission regions, and emission in the larger effective-mass region causes momentum relaxation with smaller electron kinetic energy loss. These lead to smaller overall phonon emission and simultaneous potential-gain and self-cooling effects. Larger potential is gained with lower current and higher optical-phonon temperature. The self-consistent Monte Carlo simulations complying with the lateral momentum conservation combined with the entropy analysis are applied to a GaAs:Al electron channel with a graded heterobarrier, and under ideal lateral thermal isolation from surroundings, the phonon recycling efficiency reaches 25% of the reversible limit at 350 K, and it increases with temperature. In conclusion, the lateral momentum contributes to the transmission across the barrier, so partially nonconserving lateral momentum electron scattering (rough interface) can improve efficiency.

Authors:
 [1];  [2]
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. Univ. of Michigan, Ann Arbor, MI (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; USDOE Office of Science (SC), Advanced Scientific Computing Research (ASCR)
OSTI Identifier:
1370116
Alternate Identifier(s):
OSTI ID: 1181577
Grant/Contract Number:  
SC0000957; CBET 1332807; AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 91; Journal Issue: 8; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Shin, Seungha, and Kaviany, Massoud. Toward reversing Joule heating with a phonon-absorbing heterobarrier. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.91.085301.
Shin, Seungha, & Kaviany, Massoud. Toward reversing Joule heating with a phonon-absorbing heterobarrier. United States. https://doi.org/10.1103/PhysRevB.91.085301
Shin, Seungha, and Kaviany, Massoud. Mon . "Toward reversing Joule heating with a phonon-absorbing heterobarrier". United States. https://doi.org/10.1103/PhysRevB.91.085301. https://www.osti.gov/servlets/purl/1370116.
@article{osti_1370116,
title = {Toward reversing Joule heating with a phonon-absorbing heterobarrier},
author = {Shin, Seungha and Kaviany, Massoud},
abstractNote = {Using a graded heterobarrier placed along an electron channel, phonons emitted in Joule heating are recycled in situ by increasing the entropy of phonon-absorbing electrons. The asymmetric electric potential distribution created by alloy grading separates the phonon absorption and emission regions, and emission in the larger effective-mass region causes momentum relaxation with smaller electron kinetic energy loss. These lead to smaller overall phonon emission and simultaneous potential-gain and self-cooling effects. Larger potential is gained with lower current and higher optical-phonon temperature. The self-consistent Monte Carlo simulations complying with the lateral momentum conservation combined with the entropy analysis are applied to a GaAs:Al electron channel with a graded heterobarrier, and under ideal lateral thermal isolation from surroundings, the phonon recycling efficiency reaches 25% of the reversible limit at 350 K, and it increases with temperature. In conclusion, the lateral momentum contributes to the transmission across the barrier, so partially nonconserving lateral momentum electron scattering (rough interface) can improve efficiency.},
doi = {10.1103/PhysRevB.91.085301},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 8,
volume = 91,
place = {United States},
year = {Mon Feb 02 00:00:00 EST 2015},
month = {Mon Feb 02 00:00:00 EST 2015}
}

Journal Article:

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Semiconducting and other major properties of gallium arsenide
journal, October 1982

  • Blakemore, J. S.
  • Journal of Applied Physics, Vol. 53, Issue 10
  • DOI: 10.1063/1.331665

Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition
journal, March 1993


Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface
journal, April 1990

  • Horio, K.; Yanai, H.
  • IEEE Transactions on Electron Devices, Vol. 37, Issue 4
  • DOI: 10.1109/16.52447

Thermoelectric transport perpendicular to thin-film heterostructures calculated using the Monte Carlo technique
journal, November 2006


The Physics of Phonons
journal, December 1991

  • Srivastava, G. P.; Kresin, Vladimir
  • Physics Today, Vol. 44, Issue 12
  • DOI: 10.1063/1.2810367

Heterobarrier for converting hot-phonon energy to electric potential
journal, February 2013


Improved Thermoelectric Power Factor in Metal-Based Superlattices
journal, March 2004


Nonequilibrium phonon effect on time-dependent relaxation of hot electrons in semiconductor heterojunctions
journal, January 1987


Monte Carlo study of electron heating and enhanced thermionic emission by hot phonons in heterolayers
journal, April 1988

  • Kim, Kiwook; Hess, Karl; Capasso, Federico
  • Applied Physics Letters, Vol. 52, Issue 14
  • DOI: 10.1063/1.99194

Nonequilibrium optical phonon generation by steady-state electron transport in quantum-cascade lasers
journal, June 2002

  • Spagnolo, Vincenzo; Scamarcio, Gaetano; Troccoli, Mariano
  • Applied Physics Letters, Vol. 80, Issue 23
  • DOI: 10.1063/1.1481186

Entropy production in hot-phonon energy conversion to electric potential
journal, August 2013

  • Shin, Seungha; Kaviany, Massoud
  • Journal of Applied Physics, Vol. 114, Issue 8
  • DOI: 10.1063/1.4819217

On momentum conservation and thermionic emission cooling
journal, March 2010

  • Kim, Raseong; Jeong, Changwook; Lundstrom, Mark S.
  • Journal of Applied Physics, Vol. 107, Issue 5
  • DOI: 10.1063/1.3295899

Transport Measurements Across a Tunable Potential Barrier in Graphene
journal, June 2007


GaAs, AlAs, and Al x Ga 1− x As: Material parameters for use in research and device applications
journal, August 1985

  • Adachi, Sadao
  • Journal of Applied Physics, Vol. 58, Issue 3
  • DOI: 10.1063/1.336070

Minimizing Heat Generation in Solid-State Lasers
journal, July 2010

  • Bowman, Steven R.; O'Connor, Shawn P.; Biswal, Subrat
  • IEEE Journal of Quantum Electronics, Vol. 46, Issue 7
  • DOI: 10.1109/JQE.2010.2043415

Transport Properties of GaAs
journal, October 1968


Gallium arsenide thermal conductivity and optical phonon relaxation times from first-principles calculations
journal, January 2013


Hot-phonon temperature and lifetime in biased 4H-SiC
journal, December 2004

  • Matulionis, A.; Liberis, J.; Matulionienė, I.
  • Journal of Applied Physics, Vol. 96, Issue 11
  • DOI: 10.1063/1.1812598

Carrier transport across heterojunction interfaces
journal, March 1979


Electron drift velocity in n-GaAs at high electric fields
journal, March 1977


Self-Consistent Subband Calculations of AlGaN/GaN Single Heterojunctions
journal, August 2002


Al x Ga 1 x As intervalley scattering rates from field-assisted photoemission spectroscopy
journal, February 1995


Monte Carlo simulation of scattering-induced negative differential resistance in AlGaAs/GaAs quantum wells
journal, June 1986


Thermodynamics of radiation-balanced lasing
journal, January 2003


Enhanced solid-state thermionic emission in nonplanar heterostructures
journal, January 2006

  • Bian, Zhixi; Shakouri, Ali
  • Applied Physics Letters, Vol. 88, Issue 1
  • DOI: 10.1063/1.2159574

Determination of the conduction‐band offset of a single AlGaAs barrier layer using deep level transient spectroscopy
journal, May 1993

  • Zhu, Q. S.; Mou, S. M.; Zhou, X. C.
  • Applied Physics Letters, Vol. 62, Issue 22
  • DOI: 10.1063/1.109218

Works referencing / citing this record:

From thermoelectricity to phonoelectricity
journal, June 2019

  • Melnick, Corey; Kaviany, Massoud
  • Applied Physics Reviews, Vol. 6, Issue 2
  • DOI: 10.1063/1.5031425