Stoichiometry dependence of potential screening at La ( 1 - δ ) Al ( 1 + δ ) O 3 / SrTiO 3 interfaces

Weiland, Conan; Sterbinsky, George E.; Rumaiz, Abdul K.; Hellberg, C. Stephen; Woicik, Joseph C.; Zhu, Shaobo; Schlom, Darrell G.

doi:10.1103/PhysRevB.91.165103

Title: Stoichiometry dependence of potential screening at $La_{(1 - δ)} Al_{(1 + δ)} O_{3} / SrTiO_{3}$ interfaces

Journal Article · Fri Apr 03 04:00:00 UTC 2015 · Physical Review. B, Condensed Matter and Materials Physics

DOI: https://doi.org/10.1103/PhysRevB.91.165103 · OSTI ID:1177475

Weiland, Conan; Sterbinsky, George E.; Rumaiz, Abdul K.; Hellberg, C. Stephen; Woicik, Joseph C.; Zhu, Shaobo; Schlom, Darrell G.

Hard x-ray photoelectron spectroscopy (HAXPES) and variable kinetic energy x-ray photoelectron spectroscopy (VKE-XPS) analyses have been performed on ten-unit-cell-thick La_(1-δ)Al_(1+δ)O₃ films, with La:Al ratios of 1.1, 1.0, and 0.9, deposited on SrTiO₃. Only Al-rich films are known to have a conductive interface. VKE-XPS, coupled with maximum entropy analysis, shows significant differences in the compositional depth profile among the Al-rich, La-rich, and stoichiometric films: significant La enrichment at the interface is observed in the La-rich and stoichiometric films, while the Al-rich film shows little to no intermixing. Additionally, the La-rich and stoichiometric films show a high concentration of Al at the surface, which is not observed in the Al-rich film. HAXPES valence band (VB) analysis shows a broadening of the VB for the Al-rich sample relative to the stoichiometric and La-rich samples. This broadening is consistent with an electric field across the Al-rich film. These results are consistent with a defect-driven electronic reconstruction.

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Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-98CH10886

OSTI ID:: 1177475

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 16 Vol. 91; ISSN 1098-0121; ISSN PRBMDO

Publisher:: American Physical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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