Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1104093
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 85; Journal Issue: 20; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Vedula, Ravi Pramod, Anderson, Nathan L., and Strachan, Alejandro. Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study. United States: N. p., 2012.
Web. doi:10.1103/PhysRevB.85.205209.
Vedula, Ravi Pramod, Anderson, Nathan L., & Strachan, Alejandro. Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study. United States. https://doi.org/10.1103/PhysRevB.85.205209
Vedula, Ravi Pramod, Anderson, Nathan L., and Strachan, Alejandro. Tue .
"Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study". United States. https://doi.org/10.1103/PhysRevB.85.205209.
@article{osti_1104093,
title = {Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study},
author = {Vedula, Ravi Pramod and Anderson, Nathan L. and Strachan, Alejandro},
abstractNote = {},
doi = {10.1103/PhysRevB.85.205209},
journal = {Physical Review B},
number = 20,
volume = 85,
place = {United States},
year = {Tue May 22 00:00:00 EDT 2012},
month = {Tue May 22 00:00:00 EDT 2012}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.85.205209
https://doi.org/10.1103/PhysRevB.85.205209
Other availability
Cited by: 25 works
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