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Title: Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1104093
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 85; Journal Issue: 20; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Vedula, Ravi Pramod, Anderson, Nathan L., and Strachan, Alejandro. Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study. United States: N. p., 2012. Web. doi:10.1103/PhysRevB.85.205209.
Vedula, Ravi Pramod, Anderson, Nathan L., & Strachan, Alejandro. Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study. United States. https://doi.org/10.1103/PhysRevB.85.205209
Vedula, Ravi Pramod, Anderson, Nathan L., and Strachan, Alejandro. Tue . "Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study". United States. https://doi.org/10.1103/PhysRevB.85.205209.
@article{osti_1104093,
title = {Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study},
author = {Vedula, Ravi Pramod and Anderson, Nathan L. and Strachan, Alejandro},
abstractNote = {},
doi = {10.1103/PhysRevB.85.205209},
journal = {Physical Review B},
number = 20,
volume = 85,
place = {United States},
year = {Tue May 22 00:00:00 EDT 2012},
month = {Tue May 22 00:00:00 EDT 2012}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.85.205209

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Cited by: 25 works
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