Mechanical and electronic properties of strained Ge nanowires using ab initio real-space pseudopotentials
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1103409
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 86; Journal Issue: 11; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Lee, Alex J., Kim, Minjung, Lena, Charles, and Chelikowsky, James R. Mechanical and electronic properties of strained Ge nanowires using ab initio real-space pseudopotentials. United States: N. p., 2012.
Web. doi:10.1103/PhysRevB.86.115331.
Lee, Alex J., Kim, Minjung, Lena, Charles, & Chelikowsky, James R. Mechanical and electronic properties of strained Ge nanowires using ab initio real-space pseudopotentials. United States. https://doi.org/10.1103/PhysRevB.86.115331
Lee, Alex J., Kim, Minjung, Lena, Charles, and Chelikowsky, James R. Thu .
"Mechanical and electronic properties of strained Ge nanowires using ab initio real-space pseudopotentials". United States. https://doi.org/10.1103/PhysRevB.86.115331.
@article{osti_1103409,
title = {Mechanical and electronic properties of strained Ge nanowires using ab initio real-space pseudopotentials},
author = {Lee, Alex J. and Kim, Minjung and Lena, Charles and Chelikowsky, James R.},
abstractNote = {},
doi = {10.1103/PhysRevB.86.115331},
journal = {Physical Review B},
number = 11,
volume = 86,
place = {United States},
year = {Thu Sep 27 00:00:00 EDT 2012},
month = {Thu Sep 27 00:00:00 EDT 2012}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.86.115331
https://doi.org/10.1103/PhysRevB.86.115331
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Cited by: 18 works
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