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Title: Native defects in second-generation topological insulators: Effect of spin-orbit interaction on Bi2Se3

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1103230
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 86 Journal Issue: 12; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

West, D., Sun, Y. Y., Wang, Han, Bang, Junhyeok, and Zhang, S. B. Native defects in second-generation topological insulators: Effect of spin-orbit interaction on Bi2Se3. United States: N. p., 2012. Web. doi:10.1103/PhysRevB.86.121201.
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West, D., Sun, Y. Y., Wang, Han, Bang, Junhyeok, & Zhang, S. B. Native defects in second-generation topological insulators: Effect of spin-orbit interaction on Bi2Se3. United States. https://doi.org/10.1103/PhysRevB.86.121201
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West, D., Sun, Y. Y., Wang, Han, Bang, Junhyeok, and Zhang, S. B. Tue . "Native defects in second-generation topological insulators: Effect of spin-orbit interaction on Bi2Se3". United States. https://doi.org/10.1103/PhysRevB.86.121201.
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@article{osti_1103230,
title = {Native defects in second-generation topological insulators: Effect of spin-orbit interaction on Bi2Se3},
author = {West, D. and Sun, Y. Y. and Wang, Han and Bang, Junhyeok and Zhang, S. B.},
abstractNote = {},
doi = {10.1103/PhysRevB.86.121201},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 12,
volume = 86,
place = {United States},
year = {Tue Sep 04 00:00:00 EDT 2012},
month = {Tue Sep 04 00:00:00 EDT 2012}
}
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Journal Article:
Free Publicly Available Full Text
Accepted Manuscript (Publisher)
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.86.121201
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