Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1102500
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Name: Physical Review Letters Journal Volume: 109 Journal Issue: 24; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Shi, Lin, and Wang, Lin-Wang. Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors. United States: N. p., 2012.
Web. doi:10.1103/PhysRevLett.109.245501.
Shi, Lin, & Wang, Lin-Wang. Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors. United States. https://doi.org/10.1103/PhysRevLett.109.245501
Shi, Lin, and Wang, Lin-Wang. Mon .
"Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors". United States. https://doi.org/10.1103/PhysRevLett.109.245501.
@article{osti_1102500,
title = {Ab initio Calculations of Deep-Level Carrier Nonradiative Recombination Rates in Bulk Semiconductors},
author = {Shi, Lin and Wang, Lin-Wang},
abstractNote = {},
doi = {10.1103/PhysRevLett.109.245501},
journal = {Physical Review Letters},
number = 24,
volume = 109,
place = {United States},
year = {Mon Dec 10 00:00:00 EST 2012},
month = {Mon Dec 10 00:00:00 EST 2012}
}
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https://doi.org/10.1103/PhysRevLett.109.245501
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