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Title: Quantum Hall Effect in Twisted Bilayer Graphene

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1101184
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 107; Journal Issue: 21; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Lee, Dong Su, Riedl, Christian, Beringer, Thomas, Castro Neto, A. H., von Klitzing, Klaus, Starke, Ulrich, and Smet, Jurgen H.. Quantum Hall Effect in Twisted Bilayer Graphene. United States: N. p., 2011. Web. doi:10.1103/PhysRevLett.107.216602.
Lee, Dong Su, Riedl, Christian, Beringer, Thomas, Castro Neto, A. H., von Klitzing, Klaus, Starke, Ulrich, & Smet, Jurgen H.. Quantum Hall Effect in Twisted Bilayer Graphene. United States. doi:10.1103/PhysRevLett.107.216602.
Lee, Dong Su, Riedl, Christian, Beringer, Thomas, Castro Neto, A. H., von Klitzing, Klaus, Starke, Ulrich, and Smet, Jurgen H.. Wed . "Quantum Hall Effect in Twisted Bilayer Graphene". United States. doi:10.1103/PhysRevLett.107.216602.
@article{osti_1101184,
title = {Quantum Hall Effect in Twisted Bilayer Graphene},
author = {Lee, Dong Su and Riedl, Christian and Beringer, Thomas and Castro Neto, A. H. and von Klitzing, Klaus and Starke, Ulrich and Smet, Jurgen H.},
abstractNote = {},
doi = {10.1103/PhysRevLett.107.216602},
journal = {Physical Review Letters},
number = 21,
volume = 107,
place = {United States},
year = {2011},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.107.216602

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