Abstract
The experimental results indicate that the GD-..cap alpha..SiH/sub x/ material prepared has obvious photoconductive effect. Under illumination, its electrical conductivity increases by 2 orders of magnitude. From the absorption and spectral response curve of the GD-..cap alpha..SiH/sub x/, the mobility gap E/sub g/ of 1.65 eV is obtained. Strong photoresponse is found near E/sub g/ 1.65 eV, weak response is found at localized states between 1.65 eV and 0.75 eV and below 0.75 eV no response. These evidences show that the GD-..cap alpha..SiH/sub x/ prepared is a weak n-type semiconductor. The relation of the photoconductivity versus light intensity shows that dimolecular recombining process plays a dominate role, when the photogenerated carriers move towards the E/sub c/. Under low temperature condition, the electrical conductivity of GD-..cap alpha..SiH/sub x/ decreases as tempeature decreases, and is a function of the reciprocal of the temperature. The curve may be divided into three regions: activated, (with the activated energy about 0.66 - 0.73 eV) weakly activated and non-activated processes. Under high temperature condition, the electrical conductivity increases while the temperature increases. The relation of the temperature and the conductivity is non-linear. This fact indicates that electronic transfer within GD-..cap alpha..SiH/sub x/ is brought about by
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Citation Formats
Ya-gu, Y.
Photo-electrical properties of amorphous silicon thin films by glow discharge deposition.
China: N. p.,
1980.
Web.
Ya-gu, Y.
Photo-electrical properties of amorphous silicon thin films by glow discharge deposition.
China.
Ya-gu, Y.
1980.
"Photo-electrical properties of amorphous silicon thin films by glow discharge deposition."
China.
@misc{etde_6763136,
title = {Photo-electrical properties of amorphous silicon thin films by glow discharge deposition}
author = {Ya-gu, Y}
abstractNote = {The experimental results indicate that the GD-..cap alpha..SiH/sub x/ material prepared has obvious photoconductive effect. Under illumination, its electrical conductivity increases by 2 orders of magnitude. From the absorption and spectral response curve of the GD-..cap alpha..SiH/sub x/, the mobility gap E/sub g/ of 1.65 eV is obtained. Strong photoresponse is found near E/sub g/ 1.65 eV, weak response is found at localized states between 1.65 eV and 0.75 eV and below 0.75 eV no response. These evidences show that the GD-..cap alpha..SiH/sub x/ prepared is a weak n-type semiconductor. The relation of the photoconductivity versus light intensity shows that dimolecular recombining process plays a dominate role, when the photogenerated carriers move towards the E/sub c/. Under low temperature condition, the electrical conductivity of GD-..cap alpha..SiH/sub x/ decreases as tempeature decreases, and is a function of the reciprocal of the temperature. The curve may be divided into three regions: activated, (with the activated energy about 0.66 - 0.73 eV) weakly activated and non-activated processes. Under high temperature condition, the electrical conductivity increases while the temperature increases. The relation of the temperature and the conductivity is non-linear. This fact indicates that electronic transfer within GD-..cap alpha..SiH/sub x/ is brought about by the hopping transport mechanism. Photoconductivity can be demonstrated by the R/sub D//R/sub L/ value. (R/sub D/: the dark resistivity, R/sub L/: the light resistivity).}
journal = []
volume = {1:2}
journal type = {AC}
place = {China}
year = {1980}
month = {Jan}
}
title = {Photo-electrical properties of amorphous silicon thin films by glow discharge deposition}
author = {Ya-gu, Y}
abstractNote = {The experimental results indicate that the GD-..cap alpha..SiH/sub x/ material prepared has obvious photoconductive effect. Under illumination, its electrical conductivity increases by 2 orders of magnitude. From the absorption and spectral response curve of the GD-..cap alpha..SiH/sub x/, the mobility gap E/sub g/ of 1.65 eV is obtained. Strong photoresponse is found near E/sub g/ 1.65 eV, weak response is found at localized states between 1.65 eV and 0.75 eV and below 0.75 eV no response. These evidences show that the GD-..cap alpha..SiH/sub x/ prepared is a weak n-type semiconductor. The relation of the photoconductivity versus light intensity shows that dimolecular recombining process plays a dominate role, when the photogenerated carriers move towards the E/sub c/. Under low temperature condition, the electrical conductivity of GD-..cap alpha..SiH/sub x/ decreases as tempeature decreases, and is a function of the reciprocal of the temperature. The curve may be divided into three regions: activated, (with the activated energy about 0.66 - 0.73 eV) weakly activated and non-activated processes. Under high temperature condition, the electrical conductivity increases while the temperature increases. The relation of the temperature and the conductivity is non-linear. This fact indicates that electronic transfer within GD-..cap alpha..SiH/sub x/ is brought about by the hopping transport mechanism. Photoconductivity can be demonstrated by the R/sub D//R/sub L/ value. (R/sub D/: the dark resistivity, R/sub L/: the light resistivity).}
journal = []
volume = {1:2}
journal type = {AC}
place = {China}
year = {1980}
month = {Jan}
}