Photo-electrical properties of amorphous silicon thin films by glow discharge deposition Ya-gu, Y 14 SOLAR ENERGY; SILICON SOLAR CELLS; PERFORMANCE; DATA ANALYSIS; DEPOSITION; ELECTRIC CONDUCTIVITY; FILMS; GLOW DISCHARGES; PHOTOCONDUCTIVITY; SEMICONDUCTOR MATERIALS; SILICONES; TEMPERATURE EFFECTS; DIRECT ENERGY CONVERTERS; ELECTRIC DISCHARGES; ELECTRICAL PROPERTIES; EQUIPMENT; MATERIALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; POLYMERS; SILOXANES; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion The experimental results indicate that the GD-..cap alpha..SiH/sub x/ material prepared has obvious photoconductive effect. Under illumination, its electrical conductivity increases by 2 orders of magnitude. From the absorption and spectral response curve of the GD-..cap alpha..SiH/sub x/, the mobility gap E/sub g/ of 1.65 eV is obtained. Strong photoresponse is found near E/sub g/ 1.65 eV, weak response is found at localized states between 1.65 eV and 0.75 eV and below 0.75 eV no response. These evidences show that the GD-..cap alpha..SiH/sub x/ prepared is a weak n-type semiconductor. The relation of the photoconductivity versus light intensity shows that dimolecular recombining process plays a dominate role, when the photogenerated carriers move towards the E/sub c/. Under low temperature condition, the electrical conductivity of GD-..cap alpha..SiH/sub x/ decreases as tempeature decreases, and is a function of the reciprocal of the temperature. The curve may be divided into three regions: activated, (with the activated energy about 0.66 - 0.73 eV) weakly activated and non-activated processes. Under high temperature condition, the electrical conductivity increases while the temperature increases. The relation of the temperature and the conductivity is non-linear. This fact indicates that electronic transfer within GD-..cap alpha..SiH/sub x/ is brought about by the hopping transport mechanism. Photoconductivity can be demonstrated by the R/sub D//R/sub L/ value. (R/sub D/: the dark resistivity, R/sub L/: the light resistivity). China 1980-01-01 English Journal Article Journal Name: Taiyangneng Xuebao; (China); Journal Volume: 1:2 Medium: X; Size: Pages: 124-131 https://doi.org/ [] 1:2 Journal ID: CODEN: TYNPD EDB-84-116142 2010-05-18 6763136