Abstract
50 {mu}m thick kapton-H (C{sub 22}H{sub 10}O{sub 5}N{sub 2}) films were irradiated by N{sup +}, Ar{sup +} and Fe{sup +} ions at a 200 kV ion implantor, respectively. Irradiations were performed with a dose ({phi}t) of 5 x 10{sup 14} to 1 x 10{sup 17} ions/cm{sup 2} at energy of 120 keV and beam current density of 1{mu}A/cm{sup 2} at room temperature. Sheet resistivity ({rho}{sub s}) of the modified films were measured by three-electrode method. Energy deposition parameters of incident ions in Kapton were evaluated with TRIM code. The results indicate that the surface modification of Kapton films depends strongly on the electronic energy loss process, though nuclear loss is the predominant energy loss mechanism in the considered energy region
Citation Formats
Feng, Ma, Youmei, Sun, and Changlin, Li.
Energy deposition effects and electrical modification of irradiated kapton films.
China: N. p.,
1993.
Web.
Feng, Ma, Youmei, Sun, & Changlin, Li.
Energy deposition effects and electrical modification of irradiated kapton films.
China.
Feng, Ma, Youmei, Sun, and Changlin, Li.
1993.
"Energy deposition effects and electrical modification of irradiated kapton films."
China.
@misc{etde_675044,
title = {Energy deposition effects and electrical modification of irradiated kapton films}
author = {Feng, Ma, Youmei, Sun, and Changlin, Li}
abstractNote = {50 {mu}m thick kapton-H (C{sub 22}H{sub 10}O{sub 5}N{sub 2}) films were irradiated by N{sup +}, Ar{sup +} and Fe{sup +} ions at a 200 kV ion implantor, respectively. Irradiations were performed with a dose ({phi}t) of 5 x 10{sup 14} to 1 x 10{sup 17} ions/cm{sup 2} at energy of 120 keV and beam current density of 1{mu}A/cm{sup 2} at room temperature. Sheet resistivity ({rho}{sub s}) of the modified films were measured by three-electrode method. Energy deposition parameters of incident ions in Kapton were evaluated with TRIM code. The results indicate that the surface modification of Kapton films depends strongly on the electronic energy loss process, though nuclear loss is the predominant energy loss mechanism in the considered energy region}
place = {China}
year = {1993}
month = {Dec}
}
title = {Energy deposition effects and electrical modification of irradiated kapton films}
author = {Feng, Ma, Youmei, Sun, and Changlin, Li}
abstractNote = {50 {mu}m thick kapton-H (C{sub 22}H{sub 10}O{sub 5}N{sub 2}) films were irradiated by N{sup +}, Ar{sup +} and Fe{sup +} ions at a 200 kV ion implantor, respectively. Irradiations were performed with a dose ({phi}t) of 5 x 10{sup 14} to 1 x 10{sup 17} ions/cm{sup 2} at energy of 120 keV and beam current density of 1{mu}A/cm{sup 2} at room temperature. Sheet resistivity ({rho}{sub s}) of the modified films were measured by three-electrode method. Energy deposition parameters of incident ions in Kapton were evaluated with TRIM code. The results indicate that the surface modification of Kapton films depends strongly on the electronic energy loss process, though nuclear loss is the predominant energy loss mechanism in the considered energy region}
place = {China}
year = {1993}
month = {Dec}
}