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	       <dc:title>Energy deposition effects and electrical modification of irradiated kapton films</dc:title>
	       <dc:creator>Feng, Ma; Youmei, Sun; Changlin, Li</dc:creator>
	       <dc:subject>36 MATERIALS SCIENCE; 66 PHYSICS; ARGON IONS; ELECTRIC CONDUCTIVITY; ABSORPTION; ENERGY LOSSES; FILMS; IMIDES; IRON IONS; KEV RANGE 100-1000; MODIFICATIONS; NITROGEN IONS; POLYMERS; RADIATION DOSES; SURFACE PROPERTIES; T CODES; TEMPERATURE RANGE 0273-0400 K; THRESHOLD DOSE</dc:subject>
	       <dc:subjectRelated></dc:subjectRelated>
	       <dc:description>50 {mu}m thick kapton-H (C{sub 22}H{sub 10}O{sub 5}N{sub 2}) films were irradiated by N{sup +}, Ar{sup +} and Fe{sup +} ions at a 200 kV ion implantor, respectively. Irradiations were performed with a dose ({phi}t) of 5 x 10{sup 14} to 1 x 10{sup 17} ions/cm{sup 2} at energy of 120 keV and beam current density of 1{mu}A/cm{sup 2} at room temperature. Sheet resistivity ({rho}{sub s}) of the modified films were measured by three-electrode method. Energy deposition parameters of incident ions in Kapton were evaluated with TRIM code. The results indicate that the surface modification of Kapton films depends strongly on the electronic energy loss process, though nuclear loss is the predominant energy loss mechanism in the considered energy region</dc:description>
	       <dcq:publisher>Atomic Energy Press, Beijing (China)</dcq:publisher>
	       <dcq:publisherResearch>Academia Sinica, Lanzhou (China). Inst. of Modern Physics</dcq:publisherResearch>
	       <dcq:publisherAvailability></dcq:publisherAvailability>
	       <dcq:publisherSponsor></dcq:publisherSponsor>
	       <dcq:publisherCountry>China</dcq:publisherCountry>
		   <dc:contributingOrganizations></dc:contributingOrganizations>
	       <dc:date>1993-12-01</dc:date>
	       <dc:language>English</dc:language>
	       <dc:type>Book</dc:type>
	       <dcq:typeQualifier></dcq:typeQualifier>
	       <dc:relation>Other Information: PBD: Dec 1993; Related Information: Is Part Of Institute of Modern Physics, Academia Sinica annual report (1992, January-December); PB: 180 p.</dc:relation>
	       <dc:coverage></dc:coverage>
	       <dc:format>Medium: X; Size: pp. 110-111</dc:format>
	       <dc:doi>https://doi.org/</dc:doi>
	       <dc:identifier>ISBN 7-5022-0983-2</dc:identifier>
		   <dc:journalName>[]</dc:journalName>
		   <dc:journalIssue></dc:journalIssue>
		   <dc:journalVolume></dc:journalVolume>
	       <dc:identifierReport></dc:identifierReport>
	       <dcq:identifierDOEcontract></dcq:identifierDOEcontract>
	       <dc:identifierOther>Other: ISBN 7-5022-0983-2; TRN: CN9802507060335</dc:identifierOther>
	       <dc:source>INIS; SCA: 360605; 665300; PA: AIX-29:060335; EDB-99:002699; SN: 98002032664</dc:source>
	       <dc:rights></dc:rights>
	       <dc:dateEntry>2008-02-05</dc:dateEntry>
	       <dc:dateAdded></dc:dateAdded>
	       <dc:ostiId>675044</dc:ostiId>
	       <dcq:identifier-purl></dcq:identifier-purl>
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