Abstract
The authors have studied nitrogen ion implantation into SiO/sub 2/ deposited onto GaP. Here they discuss briefly the deposition technique and the results of measurements of the breakdown voltage, the optical reflectivity and the electron paramagnetic resonance (EPR) before and after implantation.
Citation Formats
Gupta, S C, Sharma, B L, and Agashe, V V.
Nitrogen ion implantation into SiO/sub 2/.
Switzerland: N. p.,
1980.
Web.
doi:10.1016/0376-4583(80)90062-X.
Gupta, S C, Sharma, B L, & Agashe, V V.
Nitrogen ion implantation into SiO/sub 2/.
Switzerland.
https://doi.org/10.1016/0376-4583(80)90062-X
Gupta, S C, Sharma, B L, and Agashe, V V.
1980.
"Nitrogen ion implantation into SiO/sub 2/."
Switzerland.
https://doi.org/10.1016/0376-4583(80)90062-X.
@misc{etde_6543669,
title = {Nitrogen ion implantation into SiO/sub 2/}
author = {Gupta, S C, Sharma, B L, and Agashe, V V}
abstractNote = {The authors have studied nitrogen ion implantation into SiO/sub 2/ deposited onto GaP. Here they discuss briefly the deposition technique and the results of measurements of the breakdown voltage, the optical reflectivity and the electron paramagnetic resonance (EPR) before and after implantation.}
doi = {10.1016/0376-4583(80)90062-X}
journal = []
volume = {10:2}
journal type = {AC}
place = {Switzerland}
year = {1980}
month = {Feb}
}
title = {Nitrogen ion implantation into SiO/sub 2/}
author = {Gupta, S C, Sharma, B L, and Agashe, V V}
abstractNote = {The authors have studied nitrogen ion implantation into SiO/sub 2/ deposited onto GaP. Here they discuss briefly the deposition technique and the results of measurements of the breakdown voltage, the optical reflectivity and the electron paramagnetic resonance (EPR) before and after implantation.}
doi = {10.1016/0376-4583(80)90062-X}
journal = []
volume = {10:2}
journal type = {AC}
place = {Switzerland}
year = {1980}
month = {Feb}
}