Nitrogen ion implantation into SiO/sub 2/ Gupta, S C; Sharma, B L; Agashe, V V [Solid State Physics Lab., Delhi (India)] 36 MATERIALS SCIENCE; SILICON OXIDES; ION IMPLANTATION; BREAKDOWN; CHEMICAL VAPOR DEPOSITION; ELECTRON SPIN RESONANCE; GALLIUM PHOSPHIDES; NITROGEN IONS; OPTICAL PROPERTIES; CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL COATING; DEPOSITION; GALLIUM COMPOUNDS; IONS; MAGNETIC RESONANCE; OXIDES; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RESONANCE; SILICON COMPOUNDS; SURFACE COATING; 360605* - Materials- Radiation Effects The authors have studied nitrogen ion implantation into SiO/sub 2/ deposited onto GaP. Here they discuss briefly the deposition technique and the results of measurements of the breakdown voltage, the optical reflectivity and the electron paramagnetic resonance (EPR) before and after implantation. Switzerland 1980-02-01 English Journal Article Journal Name: Surf. Technol.; (Switzerland); Journal Volume: 10:2 Medium: X; Size: Pages: 153-155 https://doi.org/10.1016/0376-4583(80)90062-X [] 10:2 Journal ID: CODEN: SUTED INIS; AIX-11-553534; EDB-81-069090 2010-12-30 6543669