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Preparation and properties of electron beam vapor deposited Mo-Si films

Abstract

A comparison has been made of two different procedures for preparing mixed Mo-Si films by electron beam vapor deposition. Tempering of the films at 873, 1173, and 1273 K in the presence of H/sub 2/, Ar, or N/sub 2/ led to significant structural changes and to a reduction of the specific resistance.
Authors:
Kaufmann, C [1] 
  1. Technische Hochschule, Karl-Marx-Stadt (German Democratic Republic). Sektion Physik/Elektronische Bauelemente
Publication Date:
Jan 01, 1984
Product Type:
Journal Article
Reference Number:
AIX-16-073975; EDB-86-003761
Resource Relation:
Journal Name: Wiss. Z. - Tech. Hochsch. Karl-Marx-Stadt; (German Democratic Republic); Journal Volume: 26:4
Subject:
36 MATERIALS SCIENCE; MOLYBDENUM SILICIDES; CHEMICAL PREPARATION; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; ARGON; ELECTRON BEAMS; EVAPORATION; FILMS; HYDROGEN; INTERMETALLIC COMPOUNDS; MICROSTRUCTURE; NITROGEN; SEMICONDUCTOR MATERIALS; TEMPERING; THICKNESS; VERY HIGH TEMPERATURE; ALLOYS; BEAMS; CRYSTAL STRUCTURE; DEPOSITION; DIMENSIONS; ELECTRICAL PROPERTIES; ELECTROLYSIS; ELEMENTS; FLUIDS; GASES; HEAT TREATMENTS; LEPTON BEAMS; LYSIS; MATERIALS; MOLYBDENUM COMPOUNDS; NONMETALS; PARTICLE BEAMS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RARE GASES; REFRACTORY METAL COMPOUNDS; SILICIDES; SILICON COMPOUNDS; SURFACE COATING; SYNTHESIS; TRANSITION ELEMENT COMPOUNDS; 360601* - Other Materials- Preparation & Manufacture; 360603 - Materials- Properties
OSTI ID:
6488300
Country of Origin:
Germany
Language:
German
Other Identifying Numbers:
Journal ID: CODEN: WZTKA
Submitting Site:
HEDB
Size:
Pages: 513-518
Announcement Date:
Oct 01, 1985

Citation Formats

Kaufmann, C. Preparation and properties of electron beam vapor deposited Mo-Si films. Germany: N. p., 1984. Web.
Kaufmann, C. Preparation and properties of electron beam vapor deposited Mo-Si films. Germany.
Kaufmann, C. 1984. "Preparation and properties of electron beam vapor deposited Mo-Si films." Germany.
@misc{etde_6488300,
title = {Preparation and properties of electron beam vapor deposited Mo-Si films}
author = {Kaufmann, C}
abstractNote = {A comparison has been made of two different procedures for preparing mixed Mo-Si films by electron beam vapor deposition. Tempering of the films at 873, 1173, and 1273 K in the presence of H/sub 2/, Ar, or N/sub 2/ led to significant structural changes and to a reduction of the specific resistance.}
journal = []
volume = {26:4}
journal type = {AC}
place = {Germany}
year = {1984}
month = {Jan}
}