Abstract
A comparison has been made of two different procedures for preparing mixed Mo-Si films by electron beam vapor deposition. Tempering of the films at 873, 1173, and 1273 K in the presence of H/sub 2/, Ar, or N/sub 2/ led to significant structural changes and to a reduction of the specific resistance.
Kaufmann, C
[1]
- Technische Hochschule, Karl-Marx-Stadt (German Democratic Republic). Sektion Physik/Elektronische Bauelemente
Citation Formats
Kaufmann, C.
Preparation and properties of electron beam vapor deposited Mo-Si films.
Germany: N. p.,
1984.
Web.
Kaufmann, C.
Preparation and properties of electron beam vapor deposited Mo-Si films.
Germany.
Kaufmann, C.
1984.
"Preparation and properties of electron beam vapor deposited Mo-Si films."
Germany.
@misc{etde_6488300,
title = {Preparation and properties of electron beam vapor deposited Mo-Si films}
author = {Kaufmann, C}
abstractNote = {A comparison has been made of two different procedures for preparing mixed Mo-Si films by electron beam vapor deposition. Tempering of the films at 873, 1173, and 1273 K in the presence of H/sub 2/, Ar, or N/sub 2/ led to significant structural changes and to a reduction of the specific resistance.}
journal = []
volume = {26:4}
journal type = {AC}
place = {Germany}
year = {1984}
month = {Jan}
}
title = {Preparation and properties of electron beam vapor deposited Mo-Si films}
author = {Kaufmann, C}
abstractNote = {A comparison has been made of two different procedures for preparing mixed Mo-Si films by electron beam vapor deposition. Tempering of the films at 873, 1173, and 1273 K in the presence of H/sub 2/, Ar, or N/sub 2/ led to significant structural changes and to a reduction of the specific resistance.}
journal = []
volume = {26:4}
journal type = {AC}
place = {Germany}
year = {1984}
month = {Jan}
}