Preparation and properties of electron beam vapor deposited Mo-Si films Kaufmann, C [Technische Hochschule, Karl-Marx-Stadt (German Democratic Republic). Sektion Physik/Elektronische Bauelemente] 36 MATERIALS SCIENCE; MOLYBDENUM SILICIDES; CHEMICAL PREPARATION; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; ARGON; ELECTRON BEAMS; EVAPORATION; FILMS; HYDROGEN; INTERMETALLIC COMPOUNDS; MICROSTRUCTURE; NITROGEN; SEMICONDUCTOR MATERIALS; TEMPERING; THICKNESS; VERY HIGH TEMPERATURE; ALLOYS; BEAMS; CRYSTAL STRUCTURE; DEPOSITION; DIMENSIONS; ELECTRICAL PROPERTIES; ELECTROLYSIS; ELEMENTS; FLUIDS; GASES; HEAT TREATMENTS; LEPTON BEAMS; LYSIS; MATERIALS; MOLYBDENUM COMPOUNDS; NONMETALS; PARTICLE BEAMS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RARE GASES; REFRACTORY METAL COMPOUNDS; SILICIDES; SILICON COMPOUNDS; SURFACE COATING; SYNTHESIS; TRANSITION ELEMENT COMPOUNDS; 360601* - Other Materials- Preparation & Manufacture; 360603 - Materials- Properties A comparison has been made of two different procedures for preparing mixed Mo-Si films by electron beam vapor deposition. Tempering of the films at 873, 1173, and 1273 K in the presence of H/sub 2/, Ar, or N/sub 2/ led to significant structural changes and to a reduction of the specific resistance. Germany 1984-01-01 German Journal Article Journal Name: Wiss. Z. - Tech. Hochsch. Karl-Marx-Stadt; (German Democratic Republic); Journal Volume: 26:4 Medium: X; Size: Pages: 513-518 https://doi.org/ [] 26:4 Journal ID: CODEN: WZTKA AIX-16-073975; EDB-86-003761 2010-05-17 6488300