Abstract
Deposition of silicon nitride films was studied under steady-state conditions at 850 /sup 0/C and a pressure of 1.2.10/sup 2/ Pa. It is assumed that the reaction in the gas phase appears as the limiting step of the processes. A mathematical model was formulated for the process within the framework of which the deposition rate profile is determined by the geometry of the reaction space.
Citation Formats
Popov, V P, Ginovker, A S, and Vasil'eva, L L.
Reaction of monosilane with ammonia at low pressure I. Mathematical model of the process of deposition of silicon nitride films.
USSR: N. p.,
1981.
Web.
Popov, V P, Ginovker, A S, & Vasil'eva, L L.
Reaction of monosilane with ammonia at low pressure I. Mathematical model of the process of deposition of silicon nitride films.
USSR.
Popov, V P, Ginovker, A S, and Vasil'eva, L L.
1981.
"Reaction of monosilane with ammonia at low pressure I. Mathematical model of the process of deposition of silicon nitride films."
USSR.
@misc{etde_5750269,
title = {Reaction of monosilane with ammonia at low pressure I. Mathematical model of the process of deposition of silicon nitride films}
author = {Popov, V P, Ginovker, A S, and Vasil'eva, L L}
abstractNote = {Deposition of silicon nitride films was studied under steady-state conditions at 850 /sup 0/C and a pressure of 1.2.10/sup 2/ Pa. It is assumed that the reaction in the gas phase appears as the limiting step of the processes. A mathematical model was formulated for the process within the framework of which the deposition rate profile is determined by the geometry of the reaction space.}
journal = []
volume = {9/4}
journal type = {AC}
place = {USSR}
year = {1981}
month = {Jan}
}
title = {Reaction of monosilane with ammonia at low pressure I. Mathematical model of the process of deposition of silicon nitride films}
author = {Popov, V P, Ginovker, A S, and Vasil'eva, L L}
abstractNote = {Deposition of silicon nitride films was studied under steady-state conditions at 850 /sup 0/C and a pressure of 1.2.10/sup 2/ Pa. It is assumed that the reaction in the gas phase appears as the limiting step of the processes. A mathematical model was formulated for the process within the framework of which the deposition rate profile is determined by the geometry of the reaction space.}
journal = []
volume = {9/4}
journal type = {AC}
place = {USSR}
year = {1981}
month = {Jan}
}