{
  "date" : "1981-01-01",
  "identifier_doecontract" : "",
  "subject" : "37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; SILICON NITRIDES; CHEMICAL REACTION KINETICS; DEPOSITION; AMMONIA; FILMS; LOW PRESSURE; MATHEMATICAL MODELS; STEADY-STATE CONDITIONS; VERY HIGH TEMPERATURE; HYDRIDES; HYDROGEN COMPOUNDS; KINETICS; NITRIDES; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; PNICTIDES; REACTION KINETICS; SILICON COMPOUNDS; 400201* - Chemical & Physicochemical Properties; 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies",
  "description" : "Deposition of silicon nitride films was studied under steady-state conditions at 850 /sup 0/C and a pressure of 1.2.10/sup 2/ Pa. It is assumed that the reaction in the gas phase appears as the limiting step of the processes. A mathematical model was formulated for the process within the framework of which the deposition rate profile is determined by the geometry of the reaction space.",
  "language" : "Russian",
  "identifier_report" : "",
  "publisher_sponsor" : "",
  "publisher_country" : "USSR",
  "source" : "EDB-83-169241",
  "purl" : "",
  "title" : "Reaction of monosilane with ammonia at low pressure I. Mathematical model of the process of deposition of silicon nitride films",
  "type" : "Journal Article",
  "subject_related" : "",
  "relation" : "Journal Name: Izv. Akad. Nauk SSSR, Ser. Khim.; (USSR); Journal Volume: 9/4",
  "entry_date" : "2010-05-12",
  "subject_list" : [ "37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY", "36 MATERIALS SCIENCE", "SILICON NITRIDES", "CHEMICAL REACTION KINETICS", "DEPOSITION", "AMMONIA", "FILMS", "LOW PRESSURE", "MATHEMATICAL MODELS", "STEADY-STATE CONDITIONS", "VERY HIGH TEMPERATURE", "HYDRIDES", "HYDROGEN COMPOUNDS", "KINETICS", "NITRIDES", "NITROGEN COMPOUNDS", "NITROGEN HYDRIDES", "PNICTIDES", "REACTION KINETICS", "SILICON COMPOUNDS", "400201* - Chemical & Physicochemical Properties", "360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies" ],
  "publisher_availability" : "",
  "rights" : "",
  "announced_date" : "1983-07-01",
  "type_qualifier" : "",
  "has_fulltext" : false,
  "coverage" : "",
  "identifier" : "",
  "journal_volume" : "9/4",
  "creator" : "Popov, V P; Ginovker, A S; Vasil'eva, L L",
  "site_ownership_code" : "HEDB",
  "osti_id" : "5750269",
  "journal_issue" : "",
  "resource_type" : "JOUR",
  "format" : "Medium: X; Size: Pages: 23-28",
  "journal_name" : [ ],
  "contributing_organizations" : "",
  "citation_location" : "https://www.osti.gov/etdeweb/biblio/5750269",
  "publication_year" : 1981,
  "subject_list_commas" : "37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY, 36 MATERIALS SCIENCE, SILICON NITRIDES, CHEMICAL REACTION KINETICS, DEPOSITION, AMMONIA, FILMS, LOW PRESSURE, MATHEMATICAL MODELS, STEADY-STATE CONDITIONS, VERY HIGH TEMPERATURE, HYDRIDES, HYDROGEN COMPOUNDS, KINETICS, NITRIDES, NITROGEN COMPOUNDS, NITROGEN HYDRIDES, PNICTIDES, REACTION KINETICS, SILICON COMPOUNDS, 400201* - Chemical & Physicochemical Properties, 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies",
  "publisher" : "",
  "identifier_other" : "Journal ID: CODEN: IASKA",
  "publisher_research" : "",
  "creators_list" : [ "Popov, V P", "Ginovker, A S", "Vasil'eva, L L" ],
  "doi" : "https://doi.org/"
}