Abstract
We have investigated CN negative-ion beam deposited films with respect dependencies of a nitrogen atom content and interatomic bonding state upon the ion energy. The CN negative ions extracted from a sputter-type negative ion source were deposited on a silicon substrate n-Si(100) at various ion energies in a range 25 - 500 eV. The film with a maximum nitrogen content was obtained at an ion energy of 75 eV, and its N/C ratio was evaluated to be 0.60 from RBS spectroscopy. From X-ray Photoelectron Spectroscopy (XPS) analysis, nitrogen atoms in the film were found to be mostly combined with carbon atoms, dominantly in bonding states C=N and C{identical_to}N. The C-N bond fraction increased with an increase in ion energy, and reached 11% of nitrogen atoms at maxim at an energy of 500 eV. In Raman spectroscopy, CN{sub x} films showed similar Raman bands to those of the diamond like carbon (DLC) film. (author)
Yoshihara, Takaaki;
Tsuji, Hiroshi;
Gotoh, Yasuhito;
Ishikawa, Junzo
[1]
- Kyoto Univ., Kyoto (Japan). Dept. of Electronic Science and Engineering
Citation Formats
Yoshihara, Takaaki, Tsuji, Hiroshi, Gotoh, Yasuhito, and Ishikawa, Junzo.
Ion energy dependence of atomic bonding state in CN-molecular negative ion beam deposition.
Japan: N. p.,
1998.
Web.
Yoshihara, Takaaki, Tsuji, Hiroshi, Gotoh, Yasuhito, & Ishikawa, Junzo.
Ion energy dependence of atomic bonding state in CN-molecular negative ion beam deposition.
Japan.
Yoshihara, Takaaki, Tsuji, Hiroshi, Gotoh, Yasuhito, and Ishikawa, Junzo.
1998.
"Ion energy dependence of atomic bonding state in CN-molecular negative ion beam deposition."
Japan.
@misc{etde_355189,
title = {Ion energy dependence of atomic bonding state in CN-molecular negative ion beam deposition}
author = {Yoshihara, Takaaki, Tsuji, Hiroshi, Gotoh, Yasuhito, and Ishikawa, Junzo}
abstractNote = {We have investigated CN negative-ion beam deposited films with respect dependencies of a nitrogen atom content and interatomic bonding state upon the ion energy. The CN negative ions extracted from a sputter-type negative ion source were deposited on a silicon substrate n-Si(100) at various ion energies in a range 25 - 500 eV. The film with a maximum nitrogen content was obtained at an ion energy of 75 eV, and its N/C ratio was evaluated to be 0.60 from RBS spectroscopy. From X-ray Photoelectron Spectroscopy (XPS) analysis, nitrogen atoms in the film were found to be mostly combined with carbon atoms, dominantly in bonding states C=N and C{identical_to}N. The C-N bond fraction increased with an increase in ion energy, and reached 11% of nitrogen atoms at maxim at an energy of 500 eV. In Raman spectroscopy, CN{sub x} films showed similar Raman bands to those of the diamond like carbon (DLC) film. (author)}
place = {Japan}
year = {1998}
month = {Nov}
}
title = {Ion energy dependence of atomic bonding state in CN-molecular negative ion beam deposition}
author = {Yoshihara, Takaaki, Tsuji, Hiroshi, Gotoh, Yasuhito, and Ishikawa, Junzo}
abstractNote = {We have investigated CN negative-ion beam deposited films with respect dependencies of a nitrogen atom content and interatomic bonding state upon the ion energy. The CN negative ions extracted from a sputter-type negative ion source were deposited on a silicon substrate n-Si(100) at various ion energies in a range 25 - 500 eV. The film with a maximum nitrogen content was obtained at an ion energy of 75 eV, and its N/C ratio was evaluated to be 0.60 from RBS spectroscopy. From X-ray Photoelectron Spectroscopy (XPS) analysis, nitrogen atoms in the film were found to be mostly combined with carbon atoms, dominantly in bonding states C=N and C{identical_to}N. The C-N bond fraction increased with an increase in ion energy, and reached 11% of nitrogen atoms at maxim at an energy of 500 eV. In Raman spectroscopy, CN{sub x} films showed similar Raman bands to those of the diamond like carbon (DLC) film. (author)}
place = {Japan}
year = {1998}
month = {Nov}
}