{
  "date" : "1998-11-01",
  "identifier_doecontract" : "",
  "subject" : "66 PHYSICS; ION BEAMS; CYANIDES; DEPOSITION; THIN FILMS; BINDING ENERGY; ENERGY DEPENDENCE; RAMAN SPECTRA; BOND LENGTHS; PHOTOELECTRON SPECTROSCOPY",
  "description" : "We have investigated CN negative-ion beam deposited films with respect dependencies of a nitrogen atom content and interatomic bonding state upon the ion energy. The CN negative ions extracted from a sputter-type negative ion source were deposited on a silicon substrate n-Si(100) at various ion energies in a range 25 - 500 eV. The film with a maximum nitrogen content was obtained at an ion energy of 75 eV, and its N/C ratio was evaluated to be 0.60 from RBS spectroscopy. From X-ray Photoelectron Spectroscopy (XPS) analysis, nitrogen atoms in the film were found to be mostly combined with carbon atoms, dominantly in bonding states C=N and C{identical_to}N. The C-N bond fraction increased with an increase in ion energy, and reached 11% of nitrogen atoms at maxim at an energy of 500 eV. In Raman spectroscopy, CN{sub x} films showed similar Raman bands to those of the diamond like carbon (DLC) film. (author)",
  "language" : "Japanese",
  "identifier_report" : "CONF-981172-",
  "publisher_sponsor" : "",
  "publisher_country" : "Japan",
  "source" : "JPN; SCA: 665200; PA: JPN-99:011186; EDB-99:067548; SN: 99002110629",
  "purl" : "",
  "title" : "Ion energy dependence of atomic bonding state in CN-molecular negative ion beam deposition",
  "type" : "Conference",
  "subject_related" : "",
  "relation" : "Conference: BEAMS 1998: 9. symposium on beam engineering of advanced material syntheses, Tokyo (Japan), 25-26 Nov 1998; Other Information: PBD: Nov 1998; Related Information: Is Part Of Proceedings of the ninth symposium on beam engineering of advanced material syntheses; Ishikawa, Junzo [ed.] [Kyoto Univ., Kyoto (Japan)]; PB: 195 p.; Dai-9-kai ryushisen no sentanteki oyo gijutsu ni kansuru shinpojiumu",
  "entry_date" : "2008-02-04",
  "subject_list" : [ "66 PHYSICS", "ION BEAMS", "CYANIDES", "DEPOSITION", "THIN FILMS", "BINDING ENERGY", "ENERGY DEPENDENCE", "RAMAN SPECTRA", "BOND LENGTHS", "PHOTOELECTRON SPECTROSCOPY" ],
  "publisher_availability" : "",
  "rights" : "",
  "announced_date" : "2004-01-25",
  "type_qualifier" : "",
  "has_fulltext" : false,
  "coverage" : "",
  "identifier" : "",
  "journal_volume" : "",
  "creator" : "Yoshihara, Takaaki; Tsuji, Hiroshi; Gotoh, Yasuhito; Ishikawa, Junzo [Kyoto Univ., Kyoto (Japan). Dept. of Electronic Science and Engineering]",
  "site_ownership_code" : "JPN",
  "osti_id" : "355189",
  "journal_issue" : "",
  "resource_type" : "CONF",
  "format" : "Medium: X; Size: pp. 119-122",
  "journal_name" : [ ],
  "contributing_organizations" : "",
  "citation_location" : "https://www.osti.gov/etdeweb/biblio/355189",
  "publication_year" : 1998,
  "subject_list_commas" : "66 PHYSICS, ION BEAMS, CYANIDES, DEPOSITION, THIN FILMS, BINDING ENERGY, ENERGY DEPENDENCE, RAMAN SPECTRA, BOND LENGTHS, PHOTOELECTRON SPECTROSCOPY",
  "publisher" : "IONICS Publishing Corp, Tokyo (Japan)",
  "identifier_other" : "TRN: JP9911186",
  "publisher_research" : "The Beam Engineering Research Society of Japan, Kyoto (Japan)",
  "creators_list" : [ "Yoshihara, Takaaki", "Tsuji, Hiroshi", "Gotoh, Yasuhito", "Ishikawa, Junzo [Kyoto Univ., Kyoto (Japan). Dept. of Electronic Science and Engineering]" ],
  "doi" : "https://doi.org/"
}