Abstract
The latest advances in SiC X-ray detectors are presented: a pixel detector coupled to a custom ultra low noise CMOS preamplifier has been characterized at room and high temperature. An equivalent noise energy (ENE) of 113 eV FWHM, corresponding to 6.1 electrons r.m.s., has been achieved with the detector/front-end system operating at +30 {sup o}C. A Fano factor of F=0.10 has been estimated from the {sup 55}Fe spectrum. When the system is heated up to +100 {sup o}C, the measured ENE is 163 eV FWHM (8.9 electrons r.m.s.). It is determined that both at room and at high temperature the performance are fully limited by the noise of the front-end electronics. It is also presented the capability of SiC detectors to operate in environments under unstable temperature conditions without any apparatus for temperature stabilization; it has been proved that a SiC detector can acquire high resolution X-ray spectra without spectral line degradation while the system temperature changes between +30 and +75 {sup o}C.
Bertuccio, Giuseppe;
[1]
National Institute of Nuclear Physics, INFN sez. Milano (Italy)];
Caccia, Stefano;
[1]
Puglisi, Donatella;
Macera, Daniele;
[1]
National Institute of Nuclear Physics, INFN sez. Milano (Italy)]
- Politecnico di Milano, Department of Electronics Engineering and Information Science, Como Campus, Via Anzani 42, 22100 Como (Italy)
Citation Formats
Bertuccio, Giuseppe, National Institute of Nuclear Physics, INFN sez. Milano (Italy)], Caccia, Stefano, Puglisi, Donatella, Macera, Daniele, and National Institute of Nuclear Physics, INFN sez. Milano (Italy)].
Advances in silicon carbide X-ray detectors.
Netherlands: N. p.,
2011.
Web.
doi:10.1016/J.NIMA.2010.08.046.
Bertuccio, Giuseppe, National Institute of Nuclear Physics, INFN sez. Milano (Italy)], Caccia, Stefano, Puglisi, Donatella, Macera, Daniele, & National Institute of Nuclear Physics, INFN sez. Milano (Italy)].
Advances in silicon carbide X-ray detectors.
Netherlands.
https://doi.org/10.1016/J.NIMA.2010.08.046
Bertuccio, Giuseppe, National Institute of Nuclear Physics, INFN sez. Milano (Italy)], Caccia, Stefano, Puglisi, Donatella, Macera, Daniele, and National Institute of Nuclear Physics, INFN sez. Milano (Italy)].
2011.
"Advances in silicon carbide X-ray detectors."
Netherlands.
https://doi.org/10.1016/J.NIMA.2010.08.046.
@misc{etde_22042350,
title = {Advances in silicon carbide X-ray detectors}
author = {Bertuccio, Giuseppe, National Institute of Nuclear Physics, INFN sez. Milano (Italy)], Caccia, Stefano, Puglisi, Donatella, Macera, Daniele, and National Institute of Nuclear Physics, INFN sez. Milano (Italy)]}
abstractNote = {The latest advances in SiC X-ray detectors are presented: a pixel detector coupled to a custom ultra low noise CMOS preamplifier has been characterized at room and high temperature. An equivalent noise energy (ENE) of 113 eV FWHM, corresponding to 6.1 electrons r.m.s., has been achieved with the detector/front-end system operating at +30 {sup o}C. A Fano factor of F=0.10 has been estimated from the {sup 55}Fe spectrum. When the system is heated up to +100 {sup o}C, the measured ENE is 163 eV FWHM (8.9 electrons r.m.s.). It is determined that both at room and at high temperature the performance are fully limited by the noise of the front-end electronics. It is also presented the capability of SiC detectors to operate in environments under unstable temperature conditions without any apparatus for temperature stabilization; it has been proved that a SiC detector can acquire high resolution X-ray spectra without spectral line degradation while the system temperature changes between +30 and +75 {sup o}C.}
doi = {10.1016/J.NIMA.2010.08.046}
journal = []
issue = {1}
volume = {652}
journal type = {AC}
place = {Netherlands}
year = {2011}
month = {Oct}
}
title = {Advances in silicon carbide X-ray detectors}
author = {Bertuccio, Giuseppe, National Institute of Nuclear Physics, INFN sez. Milano (Italy)], Caccia, Stefano, Puglisi, Donatella, Macera, Daniele, and National Institute of Nuclear Physics, INFN sez. Milano (Italy)]}
abstractNote = {The latest advances in SiC X-ray detectors are presented: a pixel detector coupled to a custom ultra low noise CMOS preamplifier has been characterized at room and high temperature. An equivalent noise energy (ENE) of 113 eV FWHM, corresponding to 6.1 electrons r.m.s., has been achieved with the detector/front-end system operating at +30 {sup o}C. A Fano factor of F=0.10 has been estimated from the {sup 55}Fe spectrum. When the system is heated up to +100 {sup o}C, the measured ENE is 163 eV FWHM (8.9 electrons r.m.s.). It is determined that both at room and at high temperature the performance are fully limited by the noise of the front-end electronics. It is also presented the capability of SiC detectors to operate in environments under unstable temperature conditions without any apparatus for temperature stabilization; it has been proved that a SiC detector can acquire high resolution X-ray spectra without spectral line degradation while the system temperature changes between +30 and +75 {sup o}C.}
doi = {10.1016/J.NIMA.2010.08.046}
journal = []
issue = {1}
volume = {652}
journal type = {AC}
place = {Netherlands}
year = {2011}
month = {Oct}
}